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Extended wavelength table-top type avalanche photodiode and preparation method thereof

An avalanche photoelectric, mesa-type technology, applied in circuits, electrical components, semiconductor devices, etc., to achieve the effect of reducing dark current

Inactive Publication Date: 2018-05-11
TIANJIN UNIV
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  • Application Information

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Problems solved by technology

The above research results show that the main method to reduce the dark current of extended-wavelength InGaAs detectors is to improve the growth quality of epitaxial materials and use advanced process equipment to reduce device defects. Starting from the internal structure of the device, the dark current is reduced by optimizing the device structure. There is little research

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  • Extended wavelength table-top type avalanche photodiode and preparation method thereof
  • Extended wavelength table-top type avalanche photodiode and preparation method thereof
  • Extended wavelength table-top type avalanche photodiode and preparation method thereof

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[0064] (1) Material structure growth. Using GSMBE, a 1 μm thick N-InP buffer layer was epitaxially grown sequentially on an N-type heavily doped InP substrate with a doping concentration of 2×10 18 cm -3 ; 2μm thick N-In (1-x) al x As linear gradient buffer layer, the doping concentration is 6.6×10 16 cm -3 ; 0.7μm thick N-In 0.83 Ga 0.17 As absorbing layer, the doping concentration is 1×10 16 cm -3 ; 100nm thick N-In 0.66 Ga 0.34 As / InAs superlattice, the doping concentration is 1×10 16 cm -3 ; 0.7 μm thick N - -In 0.83 Ga 0.17 As absorbing layer, the doping concentration is 1×10 16 cm -3 ; 0.25 μm thick N-InP charge layer with a doping concentration of 1×10 17 cm -3 ; 0.5 μm thick intrinsic doped InP multiplication layer; 2.0 μm thick P-type heavily doped InP contact layer with a doping concentration of 1×10 19 cm -3 .

[0065] (2) deposited silicon dioxide (SiO 2 ) mask. A layer of 700nm thick SiO was deposited on the device surface by plasma enhanced...

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Abstract

The invention belongs to the field of photoelectric detection and image sensors, wherein the high light current of a device is guaranteed while the dark current of the device is reduced. A reference basis is provided for the industrial application. According to the invention, an extended wavelength table-top type avalanche photodiode structurally comprises an N<+>-InP substrate, an N-InP buffer layer, an N-InAlAs-In(1-x)AlxAs gradient layer, an N-In0.83Ga0.17As absorption layer, an N-In0.66Ga0.34As / InAs superlattice, an N-In0.83Ga0.17As absorption layer, an N-InGaAsP-In(1-x)GaxAsyP(1-y) component gradient layer, an N-InP charge layer, an i-InP multiplication layer and a P<+>-InP contact layer. Photogenerated carriers are subjected to continuous collision ionization in the multiplication layer, so that the avalanche multiplication is initiated. The extended wavelength table-top type avalanche photodiode is mainly applied to the design and manufacture occasions of photoelectric detectionand photoelectric sensors.

Description

technical field [0001] The invention belongs to the field of photoelectric detection and image sensors, and specifically relates to a method for reducing the dark current of a mesa-type InGaAs / InP (indium gallium arsenic / indium phosphorus) avalanche photodiode. Background technique [0002] Single photon detection is to amplify a single photon signal and identify it through pulse discrimination and digital counting techniques, so as to achieve the ultimate sensitivity of photoelectric detection. Single-photon detection is widely used in high-resolution spectral measurement, weak light imaging, high-speed imaging, and quantum communication. Designing an efficient and reliable single-photon detector is one of the key issues in single-photon detection technology. [0003] At present, the commonly used single photon detectors mainly include photomultiplier tube (PMT), single photon avalanche diode (SPAD), vacuum avalanche photodiode (VAPD) and superconducting single photon detec...

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Application Information

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IPC IPC(8): H01L31/0304H01L31/0352H01L31/107H01L31/18
CPCH01L31/1075H01L31/03046H01L31/035236H01L31/1844
Inventor 谢生朱帅宇毛陆虹
Owner TIANJIN UNIV
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