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Double-layer photoresist-based photonic crystal scintillator preparation method

A double-layer photoresist and photonic crystal technology, applied in the field of nuclear radiation detection, can solve the problems of optimization effect, impossibility, shallow etching depth, etc.

Active Publication Date: 2018-05-22
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the etching depth of this method is shallow and can only reach 45nm. Therefore, this structure cannot achieve a more optimized effect of light extraction. How to obtain a deeper etching effect is a problem that must be solved by using soft X-ray interference lithography technology.

Method used

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  • Double-layer photoresist-based photonic crystal scintillator preparation method
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  • Double-layer photoresist-based photonic crystal scintillator preparation method

Examples

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Effect test

Embodiment 1

[0028] A preparation method of photonic crystal scintillator based on double-layer photoresist, and its process flow is as follows figure 1 As shown, the following steps are taken:

[0029] Select quartz substrate 1, such as figure 1 As shown in (a), after it is cleaned, a 50nm thick PMMA is spin-coated on the upper surface of the substrate 1 as the positive glue layer 2 (manufacturer: MicroChem Corp. glue model: 950PMMA A2), Then spin-coated a layer of 100nm thick HSQ as the negative layer 3, (manufacturer: Dow Corning glue model: XR-1541-004), such as figure 1 As shown in (b).

[0030] A mask consisting of four gratings is used for X-ray interference lithography. The lithography experiment was completed on the X-ray interference lithography line station of the Shanghai Synchrotron Radiation Facility (BL08U1B). After photolithography, a two-dimensional square periodic array is formed, the lattice constant is 400nm, the soft X-ray energy is 92.5eV, the single exposure time is abou...

Embodiment 2

[0036] A preparation method of photonic crystal scintillator based on double-layer photoresist adopts the following steps:

[0037] (1) First spin-coated PMMA photoresist with a thickness of 50nm as a positive glue on the cleaned quartz substrate surface, and then spin-coated a layer of HSQ photoresist with a thickness of 100nm as a negative glue;

[0038] (2) Using synchrotron radiation soft X-ray interference lithography, four beam splitting gratings are used to superimpose the first-order diffraction interference, and the photoresist on the sample surface is exposed for 15 seconds in the interference superimposed light field area. If the single exposure area Smaller, you can use multiple exposure splicing technology to obtain a larger area sample preparation. After exposure, the structure pattern of HSQ glue is obtained, and after development, a periodic structure of photoresist columnar structure composed of HSQ glue after curing is obtained;

[0039] (3) The obtained structure i...

Embodiment 3

[0043] A preparation method of photonic crystal scintillator based on double-layer photoresist adopts the following steps:

[0044] (1) First spin-coated PMMA photoresist with a thickness of 70nm on the surface of the cleaned quartz substrate as a positive resin, and then spin-coated a layer of HSQ photoresist with a thickness of 110nm as a negative resin;

[0045] (2) Using synchrotron radiation soft X-ray interference lithography, four beam splitting gratings are used to superimpose their first-order diffraction interference, and the photoresist on the sample surface is exposed for 20 seconds in the interference superimposed light field area. If the single exposure area Smaller, you can use multiple exposure splicing technology to obtain a larger area sample preparation. After exposure, the structure pattern of HSQ glue is obtained, and after development, a periodic structure of photoresist columnar structure composed of HSQ glue after curing is obtained;

[0046] (3) The obtained ...

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Abstract

The invention relates to a double-layer photoresist-based photonic crystal scintillator preparation method. The method comprises the following steps: spin-coating the surface of a quartz substrate with a PMMA photoresist and an HSQ photoresist, adopting synchrotron radiation soft X-ray interference lithography, performing exposure to obtain the structural pattern of the HSQ photoresist, etching the obtained PMMA layer through a reactive ion beam etching technology, depositing a TiO2 layer on the surface of the obtained structure, and finally spin-coating the surface of the structure with a plastic scintillator obtain a scintillator having a photonic crystal structure. Compared with the prior art, the method in the invention allows a high structure etching depth to be obtained based on thesoft X-ray interference lithography technology, improves the light output efficiency of the scintillator, and also takes the advantages of large area, short cycle and high efficiency of the soft X-rayinterference lithography technology.

Description

Technical field [0001] The invention belongs to the field of nuclear radiation detection, and specifically relates to a method for preparing a photonic crystal scintillator based on double-layer photoresist. The method can achieve deeper etching in an X-ray interference lithography system, thereby improving the light output of the scintillator The purpose is to improve the sensitivity and signal-to-noise ratio of the detection system. Background technique [0002] The scintillation detection system is a very important radiation measurement device in high-energy physics experiments, nuclear physics experiments and nuclear medicine imaging systems. The core functional material in the device is the scintillator. Scintillators can detect radiation by absorbing high-energy radiation and converting it into visible light. The light output of the scintillator is directly determined by the efficiency of the detector. The light output is determined by the intrinsic light yield of the scin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G01T1/202
CPCG01T1/202G01T1/2023G03F7/0037
Inventor 刘波程传伟张娟楠顾牡陈鸿刘金良陈亮欧阳晓平
Owner TONGJI UNIV
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