Quantum dot water-based coated copper foil for silicon-based negative electrode material and preparation method thereof
A technology of silicon-based negative electrode materials and quantum dots, which is applied in the direction of battery electrodes, electrode carriers/current collectors, structural parts, etc., can solve the problem of reducing the cycle life of lithium-ion cycle batteries, affecting the performance of lithium-ion cycle batteries, and not being able to exert nanometer The effective capacity of silicon powder and other issues can be improved to improve cycle performance and other electrical properties, reduce internal resistance, and reduce impedance
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Embodiment 1
[0028] A quantum dot water-based coated copper foil for silicon-based negative electrode materials proposed by the present invention is characterized in that its raw materials include: copper foil, binder, solvent, and quantum dots.
[0029] Wherein, the mass ratio between binder, solvent and quantum dot is 2:97.97:0.03;
[0030] The binder is polyimide;
[0031] The solvent is water;
[0032] Quantum dots are prepared according to the following process: single-layer graphene is subjected to ultrasonic crushing or high-speed shearing to obtain quantum dots with a particle size of 5 nm;
[0033] The present invention also proposes a method for preparing a silicon-based negative electrode material with a quantum dot water-based coating copper foil, comprising the following steps:
[0034] S1. Binder pretreatment: Pretreat the binder at 120°C for 6 hours to obtain a pretreated binder;
[0035] S2. Mechanical stirring: put the pretreatment binder in the solvent, stir at a frequ...
Embodiment 2
[0039] A quantum dot water-based coated copper foil for silicon-based negative electrode materials proposed by the present invention is characterized in that its raw materials include: copper foil, binder, solvent, and quantum dots.
[0040] Wherein, the mass ratio between binder, solvent and quantum dot is 1.5:98.45:0.05;
[0041] The binder is made of polyacrylic acid;
[0042] The solvent is water;
[0043] Quantum dots are prepared according to the following process: multilayer graphene is subjected to ultrasonic crushing or high-speed shearing to obtain quantum dots with a particle size of 10nm;
[0044] The present invention also proposes a method for preparing a silicon-based negative electrode material with a quantum dot water-based coating copper foil, comprising the following steps:
[0045] S1. Binder pretreatment: Pretreat the binder at 100°C for 4 hours to obtain a pretreated binder;
[0046] S2. Mechanical stirring: put the pretreatment binder in the solvent, ...
Embodiment 3
[0050] A quantum dot water-based coated copper foil for silicon-based negative electrode materials proposed by the present invention is characterized in that its raw materials include: copper foil, binder, solvent, and quantum dots.
[0051] Wherein, the mass ratio between binder, solvent and quantum dot is 3:96.9:0.1;
[0052] The binder is sodium alginate;
[0053] The solvent is water;
[0054] Quantum dots are prepared according to the following process: multi-layer graphene is subjected to ultrasonic crushing or high-speed shearing to obtain quantum dots with a particle size of 15nm;
[0055] The present invention also proposes a method for preparing a silicon-based negative electrode material with a quantum dot water-based coating copper foil, comprising the following steps:
[0056] S1. Binder pretreatment: Pretreat the binder at 120°C for 12 hours to obtain a pretreated binder;
[0057] S2. Mechanical stirring: put the pretreatment binder in the solvent, stir at a f...
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Abstract
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