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Transparent conductive film and method for preparing the same by crystal boundary printing method

A technology of transparent conductive film and conductive film, which is used in equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, conductive layer on insulating carrier, etc., can solve the problem of high template peeling technology, low material utilization rate, The problems of cumbersome process flow, etc., achieve the effects of environmental protection, high utilization rate of raw materials, and simple preparation process.

Active Publication Date: 2018-06-26
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the metal grids that have been reported so far need to use methods such as laser etching to prepare grid templates. When magnetron sputtering or nanoparticle filling is used to prepare network patterns, the process is cumbersome, the material utilization rate is low, and the template stripping technology is high.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:

[0045] Step 1: Deposit AZO film on PI transparent substrate by magnetron sputtering;

[0046] Step 2: Use 0.01mol / L hydrogen fluoride etching solution to etch the oxide film at grain boundary, and the etching time is 10s;

[0047] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;

[0048] Step 4: Configure 1wt% silver nano-particle conductive metal ink;

[0049] Step 5: Apply metal ink to 5μL / cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the rotation speed is 500 revolutions / min, and the time is 30 seconds;

[0050] Step 6: Heat the transparent oxide film at 300°C for 1 hour;

[0051] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.

[0052] In the transparent condu...

Embodiment 2

[0054] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:

[0055] Step 1: Deposit an ITO film on the PEN transparent substrate by magnetron sputtering;

[0056] Step 2: Use 0.3mol / L hydrogen fluoride etching solution to perform grain boundary etching on the oxide film, and the etching time is 70s;

[0057] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;

[0058] Step 4: Configure 40wt% platinum nanoparticle conductive metal ink;

[0059] Step 5: Apply the metal ink to 1μL / cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the speed is 50,000 revolutions / min, and the time is 300 seconds;

[0060] Step 6: Heat the transparent oxide film at 200°C for 12 hours;

[0061] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.

[0062] In ...

Embodiment 3

[0064] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:

[0065] Step 1: Deposit a zinc oxide film on the PET transparent substrate by magnetron sputtering;

[0066] Step 2: Use 0.001mol / L ammonia solution to etch the oxide film grain boundary, and the etching time is 300s;

[0067] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;

[0068] Step 4: Configure 35wt% palladium nanoparticle conductive metal ink;

[0069] Step 5: Apply metal ink to 2μL / cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the speed is 30,000 revolutions / min, and the time is 250 seconds;

[0070] Step 6: Heat the transparent oxide film at 250°C for 6 hours;

[0071] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.

[0072] In the transparent conductive ...

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Abstract

The invention discloses a transparent conductive film and a method for preparing the same by a crystal boundary printing method. The transparent conductive film is composed of a transparent substrate,a transparent oxide layer covering the transparent substrate, and a metal mesh formed at a crystal boundary at the transparent oxide layer. The transparent conductive film has advantages of an oxidetransparent conductive film and a metal-mesh transparent conductive film and has characteristics of high flexibility, high conductivity, high transmittance, and simple preparation process. The sheet resistance of the transparent conductive film is 0.1 to 200 ohm / sq and the transmittance of the transparent conductive film is 20 to 80%. Besides, according to the preparation method, a metal mesh is formed at a crystal boundary of a transparent oxide layer by using a crystal boundary printing method. The preparation process is simple, the process has a good environment-friendly effect, and the utilization rate of the raw materials is high.

Description

Technical field [0001] The invention relates to a transparent conductive film and a method for preparing the film by using a grain boundary printing method, and belongs to the technical field of microelectronics preparation. Background technique [0002] Transparent conductive film is a kind of film that can conduct electricity and has high light transmittance in the visible light range. It is widely used in solar cells, displays and many other photovoltaic industries. Indium tin oxide (ITO) has become a widely used commercial transparent conductive film due to its high electrical conductivity and optical transparency. However, indium resources are scarce, so a highly transparent, highly conductive, and inexpensive The transparent conductive film is the general trend. Alternate materials such as aluminum zinc oxide (AZO) have attracted wide attention due to their cheap raw materials and excellent performance, and have become potential substitutes for ITO. Studies have shown tha...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B1/08H01B13/00
CPCH01B1/08H01B5/14H01B13/0026
Inventor 林智杰林锦新
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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