Transparent conductive film and method for preparing the same by crystal boundary printing method
A technology of transparent conductive film and conductive film, which is used in equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, conductive layer on insulating carrier, etc., can solve the problem of high template peeling technology, low material utilization rate, The problems of cumbersome process flow, etc., achieve the effects of environmental protection, high utilization rate of raw materials, and simple preparation process.
Active Publication Date: 2018-06-26
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Abstract
The invention discloses a transparent conductive film and a method for preparing the same by a crystal boundary printing method. The transparent conductive film is composed of a transparent substrate,a transparent oxide layer covering the transparent substrate, and a metal mesh formed at a crystal boundary at the transparent oxide layer. The transparent conductive film has advantages of an oxidetransparent conductive film and a metal-mesh transparent conductive film and has characteristics of high flexibility, high conductivity, high transmittance, and simple preparation process. The sheet resistance of the transparent conductive film is 0.1 to 200 ohm/sq and the transmittance of the transparent conductive film is 20 to 80%. Besides, according to the preparation method, a metal mesh is formed at a crystal boundary of a transparent oxide layer by using a crystal boundary printing method. The preparation process is simple, the process has a good environment-friendly effect, and the utilization rate of the raw materials is high.
Application Domain
Conductive layers on insulating-supportsApparatus for manufacturing conducting/semi-conducting layers +1
Technology Topic
Sheet resistanceMetal mesh +9
Examples
- Experimental program(7)
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PUM
Property | Measurement | Unit |
Thickness | 20.0 ~ 10000.0 | nm |
Aperture | 20.0 ~ 50000.0 | nm |
Square resistance | 0.1 ~ 200.0 | ω/sq |
Description & Claims & Application Information
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