Transparent conductive film and method for preparing the same by crystal boundary printing method

A technology of transparent conductive film and conductive film, which is used in equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, conductive layer on insulating carrier, etc., can solve the problem of high template peeling technology, low material utilization rate, The problems of cumbersome process flow, etc., achieve the effects of environmental protection, high utilization rate of raw materials, and simple preparation process.

Active Publication Date: 2018-06-26
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
8 Cites 0 Cited by

AI-Extracted Technical Summary

Problems solved by technology

Most of the metal grids that have been reported so far need to use methods such as laser etching to prepare grid templates. When magnetron sputtering or nanopart...
View more

Abstract

The invention discloses a transparent conductive film and a method for preparing the same by a crystal boundary printing method. The transparent conductive film is composed of a transparent substrate,a transparent oxide layer covering the transparent substrate, and a metal mesh formed at a crystal boundary at the transparent oxide layer. The transparent conductive film has advantages of an oxidetransparent conductive film and a metal-mesh transparent conductive film and has characteristics of high flexibility, high conductivity, high transmittance, and simple preparation process. The sheet resistance of the transparent conductive film is 0.1 to 200 ohm/sq and the transmittance of the transparent conductive film is 20 to 80%. Besides, according to the preparation method, a metal mesh is formed at a crystal boundary of a transparent oxide layer by using a crystal boundary printing method. The preparation process is simple, the process has a good environment-friendly effect, and the utilization rate of the raw materials is high.

Application Domain

Conductive layers on insulating-supportsApparatus for manufacturing conducting/semi-conducting layers +1

Technology Topic

Sheet resistanceMetal mesh +9

Examples

  • Experimental program(7)

Example Embodiment

[0043] Example 1
[0044] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:
[0045] Step 1: Deposit AZO film on PI transparent substrate by magnetron sputtering;
[0046] Step 2: Use 0.01mol/L hydrogen fluoride etching solution to etch the oxide film at grain boundary, and the etching time is 10s;
[0047] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;
[0048] Step 4: Configure 1wt% silver nano-particle conductive metal ink;
[0049] Step 5: Apply metal ink to 5μL/cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the rotation speed is 500 revolutions/min, and the time is 30 seconds;
[0050] Step 6: Heat the transparent oxide film at 300°C for 1 hour;
[0051] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.
[0052] In the transparent conductive film prepared in this example, the formed metal mesh has an aperture of 5000 nm and a mesh width of 100 nm. The square resistance of the transparent conductive film is 103Ω/sq; the transmittance of the transparent conductive film is 40%.

Example Embodiment

[0053] Example 2
[0054] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:
[0055] Step 1: Deposit an ITO film on the PEN transparent substrate by magnetron sputtering;
[0056] Step 2: Use 0.3mol/L hydrogen fluoride etching solution to perform grain boundary etching on the oxide film, and the etching time is 70s;
[0057] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;
[0058] Step 4: Configure 40wt% platinum nanoparticle conductive metal ink;
[0059] Step 5: Apply the metal ink to 1μL/cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the speed is 50,000 revolutions/min, and the time is 300 seconds;
[0060] Step 6: Heat the transparent oxide film at 200°C for 12 hours;
[0061] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.
[0062] In the transparent conductive film prepared in this example, the formed metal mesh has an aperture of 30000 nm and a mesh width of 1000 nm. The square resistance of the transparent conductive film is 15Ω/sq; the transmittance of the transparent conductive film is 70%.

Example Embodiment

[0063] Example 3
[0064] A transparent conductive film prepared by grain boundary printing and a preparation method thereof, the specific process is:
[0065] Step 1: Deposit a zinc oxide film on the PET transparent substrate by magnetron sputtering;
[0066] Step 2: Use 0.001mol/L ammonia solution to etch the oxide film grain boundary, and the etching time is 300s;
[0067] Step 3: Wash and remove the corrosive liquid alternately with pure water and ethanol;
[0068] Step 4: Configure 35wt% palladium nanoparticle conductive metal ink;
[0069] Step 5: Apply metal ink to 2μL/cm 2 The amount of dropping is added dropwise to the etched transparent oxide film, spread evenly, the speed is 30,000 revolutions/min, and the time is 250 seconds;
[0070] Step 6: Heat the transparent oxide film at 250°C for 6 hours;
[0071] Step 7: Wash the film alternately with pure water and ethanol to obtain a transparent oxide conductive film with a metal grid formed at the grain boundary.
[0072] In the transparent conductive film prepared in this example, the formed metal mesh has an aperture of 10000 nm and a mesh width of 500 nm. The square resistance of the transparent conductive film is 1.2Ω/sq; the transmittance of the transparent conductive film is 30%.

PUM

PropertyMeasurementUnit
Thickness20.0 ~ 10000.0nm
Aperture20.0 ~ 50000.0nm
Square resistance0.1 ~ 200.0ω/sq

Description & Claims & Application Information

We can also present the details of the Description, Claims and Application information to help users get a comprehensive understanding of the technical details of the patent, such as background art, summary of invention, brief description of drawings, description of embodiments, and other original content. On the other hand, users can also determine the specific scope of protection of the technology through the list of claims; as well as understand the changes in the life cycle of the technology with the presentation of the patent timeline. Login to view more.

Similar technology patents

Waveguide and microwave ion source equipped with the waveguide

InactiveUS7166965B2high conductivityefficient plasma generation
Owner:APPLIED MATERIALS INC

Formation method of interconnection structure

ActiveCN105097648Areduce electron scatteringhigh conductivity
Owner:SEMICON MFG INT (SHANGHAI) CORP

Classification and recommendation of technical efficacy words

  • high conductivity
  • Improve transmittance

Highly conductive nano-scaled graphene plate nanocomposites and products

ActiveUS20070158618A1high conductivityhigh bulk electrical conductivity
Owner:GLOBAL GRAPHENE GRP INC

Electric membrane switch with seven contact positions

InactiveUS6897391B2facilitate reliable connectionhigh conductivity
Owner:LEAR CORP

LCD panel and method for forming the same

ActiveUS20120274869A1improve transmittanceaperture ratio be raise
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products