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Titanium niobate lead magnesium oxide ferroelectric thin film GaN-based epitaxial integration and its preparation method

A technology of titanium lead magnesium niobate and ferroelectric thin film, which is applied in the direction of circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems that limit the practical application of GaN-based integrated ferroelectric devices and unfavorable epitaxial substrates. Electrode growth, complex structure and other issues, to achieve the effect of simple structure, reduced lattice mismatch and excellent performance

Active Publication Date: 2019-08-20
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Problems solved by technology

However, in the most common buffer layer at present, SrRuO 3 / SrTiO 3 / TiO 2 The heterojunction buffer layer has a complex structure, and the MgO buffer layer is not conducive to the growth of the epitaxial bottom electrode, which limits the practical application of GaN-based integrated ferroelectric devices

Method used

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  • Titanium niobate lead magnesium oxide ferroelectric thin film GaN-based epitaxial integration and its preparation method
  • Titanium niobate lead magnesium oxide ferroelectric thin film GaN-based epitaxial integration and its preparation method
  • Titanium niobate lead magnesium oxide ferroelectric thin film GaN-based epitaxial integration and its preparation method

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Embodiment 1

[0044] GaN semiconductor substrate cleaning. The selected substrate is sapphire-based epitaxial wafer GaN(0002) / Al2O3. The substrate was ultrasonically cleaned in acetone, ethanol and water for 8 minutes, then immersed in a hydrochloric acid solution with a concentration of 1.8 mol / L for 3 minutes, finally placed in deionized water for 8 minutes, and dried with nitrogen ;

[0045] TiO 2 Buffer layer preparation. The present invention uses TiO 2 The ceramic block is used as the target material. Firstly, vacuum the backside of the thin film deposition system to ≤2×10 -4 Pa, the substrate was heated to 550°C at a heating rate of 5°C / min. Growth of TiO by pulsed laser deposition technique 2 The parameters of the film include: deposition temperature: 550°C; deposition oxygen pressure: 1×10 -3 Pa; laser energy density: 1J / cm 2 ; Deposition rate: 0.5nm / min. Deposited TiO 2 The film thickness is 2nm;

[0046] LSCO buffer layer preparation. The present invention uses La 0...

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Abstract

The invention relates to gallium nitride-based epitaxial integration of lead titanium niobate magnesium oxide ferroelectric thin film and its preparation method. The lead titanium niobate magnesium magnesium oxide ferroelectric thin film is sequentially formed on a gallium nitride semiconductor substrate by pulse laser deposition technology TiO 2 buffer layer, strontium lanthanum cobaltate buffer layer and titanium lead magnesium niobate ferroelectric thin film; the orientation of the gallium nitride semiconductor substrate includes (0002) plane, and the epitaxial orientation of the titanium lead magnesium niobate ferroelectric thin film is (111) plane, the epitaxial orientation of the strontium lanthanum cobaltate buffer layer is (111) plane, the TiO 2 The buffer layer is rutile phase, and the epitaxial orientation is (100) plane.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric thin film materials. The invention relates to the epitaxial integration of perovskite-type lead magnesium niobate ferroelectric film and wurtzite-type gallium nitride semiconductor and its preparation technology. Background technique [0002] Integrated ferroelectrics based on the development of ferroelectric thin film and semiconductor integration technology is the frontier of condensed matter physics, materials science and microelectronics science, and it has important application prospects in the fields of ferroelectric field effect transistors, ferroelectric memories and advanced sensors. In the field of semiconductor materials, gallium nitride (GaN) is a third-generation wide-bandgap semiconductor material, which has a wider bandgap, higher critical breakdown field strength, and better electrical transmission than traditional semiconductor materials. transport characteristics. Therefo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187H01L41/316H01L41/319H10N30/853H10N30/076H10N30/079
CPCH10N30/8548H10N30/076H10N30/079
Inventor 李效民黎冠杰徐小科高相东毕志杰陈永博
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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