Ferric salt-doped Spiro-OMeTAD hole transport layer and solar cell comprising hole transport layer

A hole transport layer and solar cell technology, applied in the field of solar cells, can solve the problems of expensive dopant doping and low mobility of organic hole transport layers, achieve good device performance, improve charge transport properties, and dope low cost effect

Active Publication Date: 2018-07-17
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the low mobility of the organic hole transport layer of the current perovskite solar cell and the need for expensive dopant doping, etc., and provides a cheap dopant-doped organic hole transport layer and a preparation method thereof

Method used

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  • Ferric salt-doped Spiro-OMeTAD hole transport layer and solar cell comprising hole transport layer
  • Ferric salt-doped Spiro-OMeTAD hole transport layer and solar cell comprising hole transport layer
  • Ferric salt-doped Spiro-OMeTAD hole transport layer and solar cell comprising hole transport layer

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preparation example Construction

[0054] The preparation method of the perovskite solar cell described in any one of the above-mentioned, is characterized in that, comprises the following steps:

[0055] 1) ultrasonically clean the conductive substrate with water, acetone, and absolute ethanol in sequence, and dry it;

[0056] 2) Treat the cleaned conductive substrate with ultraviolet ozone for 10-20 minutes, put TiCl 4 - In hydrochloric acid aqueous solution, hydrolyze at 67-73°C, wash with water after hydrolysis, and burn at 430-480°C for 25-35min to obtain the electron transport layer;

[0057] 3) TiO with a mass ratio of 1:5 to 7 2 Spin-coat the surface of the electron transport layer with absolute ethanol solution, the spin-coating speed is 3500-4500rpm, and the time is 15-25s; then perform annealing treatment at 95-105°C, 8-12min, 430-480°C, 25-35min , and then cooled naturally to obtain a mesoporous layer;

[0058] 4) FAI, PbI 2 , MABr, PbBr 2 , CsI is dissolved in the mixed solution of DMF and DMS...

Embodiment 1

[0062] Embodiment 1 a kind of FeCl-containing 3 Solar cells with hole-transport layer doped with Spiro-OMeTAD

[0063] (1) Substrate cleaning: Clean the FTO glass with a detergent and rinse it with water. After there is no obvious dirt, put it into a sealed cleaning tank, pour in an aqueous solution of detergent, and ultrasonically clean it for 10 minutes, then use ultrapure water, acetone, Absolute ethanol, followed by ultrasonic cleaning. Blow dry with dry air when finished.

[0064] (2) Electron transport layer preparation: the cleaned substrate was treated in ultraviolet-ozone for 15 minutes. Dense TiO 2 The layer is prepared by a hydrothermal method, that is, the substrate that has been treated with ozone is soaked in an aqueous solution of titanium tetrachloride and sealed at 70° C. for 90 minutes for hydrolysis. After completion, take it out, rinse it with ultrapure water, blow dry, cut it into the required size and burn it at 450°C for 30 minutes, then lower it to ...

Embodiment 2

[0074] Embodiment 2 a kind of FeCl-containing 3 Solar cells with hole-transport layer doped with Spiro-OMeTAD

[0075] (1) Substrate cleaning: Clean the FTO glass with a detergent and rinse it with water. After there is no obvious dirt, put it into a sealed cleaning tank, pour in an aqueous solution of detergent, and ultrasonically clean it for 10 minutes, then use ultrapure water, acetone, Absolute ethanol, followed by ultrasonic cleaning. Blow dry with dry air when finished.

[0076] (2) Electron transport layer preparation: the cleaned substrate was treated in ultraviolet-ozone for 20 minutes. Dense TiO 2 The layer was prepared by a hydrothermal method, that is, the substrate that had been treated with ozone was soaked in an aqueous solution of titanium tetrachloride and sealed at 67°C for 100 minutes for hydrolysis. After completion, take it out, rinse it with ultrapure water, blow dry, cut it into the required size and burn it at 430°C for 35 minutes, then lower it to...

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Abstract

The invention discloses a ferric salt-doped Spiro-OMeTAD hole transport layer and a solar cell comprising the hole transport layer. The solar cell comprises a conductive substrate, an electron transport layer, a mesoporous layer, a perovskite layer, a FeCl<3>-doped Spiro-OMeTAD hole transport layer and a metal electrode from the bottom up in sequence. The hole transport layer is obtained by dropwise adding a FeCl<3> solution to an Spiro-OMeTAD solution, and performing spin coating on the perovskite layer with the mixed solution. By adopting FeCl<3> as a dopant to dope the Spiro-OMeTAD, the energy conversion efficiency of the perovskite solar cell can be greatly improved, and the efficiency of a device which adopts the hole transport material can reach 17.2%.

Description

technical field [0001] The invention belongs to the technical field of solar cells and relates to a FeCl 3 A hole transport layer doped with Spiro-OMeTAD, a preparation method thereof, and a perovskite solar cell containing the hole transport layer. Background technique [0002] Perovskite solar cell is a new type of solar cell developed from dye-sensitized solar cells using perovskite-type semiconductor materials as the photosensitive layer. It is the fastest-growing solar cell technology, developed from 2009 to the present The efficiency has exceeded 22.1%. [0003] Spiro-OMeTAD is the most widely used hole transport material in perovskite solar cells today. Due to its low hole mobility (~10 -5 cm 2 V -1 the s -1 ), many additives, such as LiTFSI, TBP and other dopants, need to be added during the normal preparation of devices to obtain better battery performance. LiTFSI can significantly improve the electrical conductivity and the hole mobility of Spiro-OMeTAD, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42
CPCH10K30/151H10K30/15Y02E10/549
Inventor 鲁统部顾晓宇穆延飞张敏
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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