Ti-Ta alloy sputtering target and production method therefor

A manufacturing method and technology for sputtering targets, which are applied in the directions of sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problem of not realizing the uniformity of smelting oxygen content, and not mentioning the improvement of target characteristics , characteristic deterioration and other problems, to achieve the effect of suppressing processing marks, good surface properties, and reducing the amount of production

Active Publication Date: 2018-07-17
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, Patent Documents 4 and 6 are targets obtained by powder metallurgy, and there is a problem of deterioration of properties due to the above-mentioned oxygen content.
Patent Document 5 discloses a Ti-Ta alloy sputtering target produced by a smelting and casting method. However, this technology only discloses melting a Ti material having a melting point difference close to 1500° C. Issues regarding the homogeneity of the smelting, issues regarding the oxygen content caused by raw material selection, etc. were not recognized, and no mention was made of the improvement of the characteristics of the target at all

Method used

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  • Ti-Ta alloy sputtering target and production method therefor
  • Ti-Ta alloy sputtering target and production method therefor
  • Ti-Ta alloy sputtering target and production method therefor

Examples

Experimental program
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Effect test

Embodiment 1

[0058] Prepare a 30 mm square, 2 mm thick Ti raw material (purity 4N or higher), and a 10 mm wide, 50 mm long, 1 mm thick strip-shaped Ta raw material (purity 4 N or higher), and weigh these raw materials so that Ti is 99.9 atomic % and Ta is 0.1 Atomic %, and put into the smelting furnace. Then, they are subjected to vacuum shell melting with the output power of melting Ti material, so as to make Ti-Ta alloy, and then, the molten alloy is cooled in a water-cooled copper crucible. Next, this Ti-Ta alloy ingot was hot forged at 700°C, and then hot rolled at 700°C. Next, machining such as cutting and grinding is performed on the plastically worked Ti-Ta alloy to finish it into a desired surface shape.

[0059] About the sputtering target obtained by the said process, the oxygen content, relative density, Vickers hardness, and surface roughness were examined. As a result, the oxygen content was 350 wtppm (variation: 18%), the relative density was 100%, the Vickers hardness was ...

Embodiment 2

[0061] Prepare 30mm square, 2mm thick Ti raw material (purity 4N or more), and 10mm width, 50mm length, 1mm thick strip-shaped Ta raw material (purity 4N or more), and weigh these raw materials so that Ti is 98 atomic % and Ta is 2 Atomic %, and put into the smelting furnace. Next, they are subjected to vacuum shell melting with the output power of melting Ti material, so as to make Ti-Ta alloy, and then the molten alloy is cooled in a water-cooled copper crucible. Next, this Ti-Ta alloy ingot was hot forged at 700°C, and then hot rolled at 700°C. Next, machining such as cutting and grinding is performed on the plastically worked Ti-Ta alloy to finish it into a desired surface shape.

[0062] About the sputtering target obtained by the said process, the oxygen content, relative density, Vickers hardness, and surface roughness were examined. As a result, the oxygen content was 320 wtppm (variation: 19%), the relative density was 100%, the Vickers hardness was 170Hv (variation...

Embodiment 3

[0064] Prepare 50 mm square, 5 mm thick Ti raw material (purity 4N or more), and 10 mm width, 50 mm length, 1 mm thickness strip-shaped Ta raw material (purity 4N or more), weigh and prepare these raw materials so that Ti is 97 atomic %, Ta 3 atomic %. In the smelting furnace, the Ti material is charged first, and the Ta material is set in a raw material input mechanism for supplementary addition. Next, vacuum shell smelting was carried out at the output power of smelting the Ti material, and after confirming that the Ti raw material was melted, the Ta material was added in 10 steps. Then, the molten alloy was cooled in a water-cooled copper crucible. Next, this Ti-Ta alloy ingot was hot forged at 1200°C, and then hot rolled at 1000°C. Next, machining such as cutting and grinding is performed on the plastically worked Ti-Ta alloy to finish it into a desired surface shape.

[0065] About the sputtering target obtained by the said process, the oxygen content, relative density...

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Abstract

Provided is a sputtering target which comprises 0.1-30 at% of Ta with the remainder being Ti and unavoidable impurities, characterized in that the oxygen content is 400 wtppm or less. Due to low oxygen content and low hardness, the present invention is easily processed and has good surface properties, and thus provides an advantageous effect that enables inhibiting particle generation during sputtering.

Description

technical field [0001] The present invention relates to a Ti-Ta alloy sputtering target suitable for forming a barrier layer in the wiring of a semiconductor integrated circuit and a manufacturing method thereof, in particular to a Ti-Ta alloy sputtering target produced by a melting method and a manufacturing method thereof. Background technique [0002] Although the miniaturization of the wiring width of large-scale integrated circuits (LSI) is slowing down, high integration and low power consumption brought about by miniaturization are still required. With the advancement of evaporation technology such as physical vapor growth, This trend is still continuing. [0003] On the other hand, there has been no major technological innovation in the materials constituting the components, and the main materials have been added alloy elements through repeated improvements. Cu wiring and diffusion barrier material Ta introduced around 2000 are still the mainstream. In addition, in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C14/00C22C27/02
CPCB22D7/005C22C1/02C22C14/00C22C27/02C23C14/165C23C14/3414H01J37/3429H01J37/3491C23C14/34
Inventor 小田国博宫田千荣
Owner JX NIPPON MINING & METALS CORP
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