Resist underlayer film forming composition containing indolocarbazole novolak resin

A technology of resist lower layer and composition, which is applied in the direction of coating, photographic plate-making process of pattern surface, photosensitive material used in optical mechanical equipment, etc., can solve the problem of large influence of standing wave of active light and other problems, and achieve Effects of high heat resistance, low amount of sublimation, and high dry etching resistance

Active Publication Date: 2018-07-17
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Along with this, the diffuse reflection of active light from the substrate and the influence of standing waves are major problems

Method used

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  • Resist underlayer film forming composition containing indolocarbazole novolak resin
  • Resist underlayer film forming composition containing indolocarbazole novolak resin
  • Resist underlayer film forming composition containing indolocarbazole novolak resin

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0108]30.00 g of benzil (manufactured by Tokyo Chemical Industry Co., Ltd.), 41.79 g of indole (manufactured by Tokyo Chemical Industry Co., Ltd.), and 5.43 g of p-toluenesulfonic acid monohydrate (manufactured by Tokyo Chemical Industry Co., Ltd.) were added to a 1 L three-necked flask. Co., Ltd.), 300 g of toluene (manufactured by Kanto Chemical Co., Ltd.). Then, a reflux tube was installed, and the mixture was stirred under reflux at 160° C. for about 12 hours under a nitrogen atmosphere. After completion of the reaction, the precipitate was recovered by suction filtration, and washed with 1 L of toluene and 1 L of methanol. The precipitate was dried under vacuum at 60°C for about 12 hours.

[0109] In a 1L three-neck flask, add the dried precipitate and 1,4-di Alkanes 500mL. Then, a reflux tube was installed, and the mixture was stirred under reflux at 120° C. for about 1 hour under a nitrogen atmosphere. After the stirring was stopped, it was cooled and recrystallize...

Synthetic example 2

[0114] Add 8.00 g of compound 1, 2.08 g of benzaldehyde (manufactured by Kishida Chemical Co., Ltd.), 28.39 g of propylene glycol monomethyl ether acetate, and 7.10 g of N-methyl-2-pyrrolidone (Kanto Chemical Co., Ltd.), 1.13 g of methanesulfonic acid (Tokyo Chemical Industry Co., Ltd.). It was then heated up to 150°C and stirred at reflux for about 20 hours. After completion of the reaction, it was diluted with 20.49 g of propylene glycol monomethyl ether acetate, and the precipitate was removed by filtration. The recovered filtrate was added dropwise to methanol solution for reprecipitation. The obtained precipitate was suction-filtered, and the filtrate was dried under reduced pressure at 60° C. overnight. Thus, 6.42 g of a gray powdery resin was obtained. The resulting polymer corresponds to formula (1-2). The weight average molecular weight Mw measured by GPC in terms of polystyrene was 16,100, and the polydispersity Mw / Mn was 3.12.

Synthetic example 3

[0116] Add 8.00 g of compound 1, 3.06 g of 1-naphthaldehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), 32.83 g of propylene glycol monomethyl ether acetate, and 8.21 g of N-methyl-2- Pyrrolidone (manufactured by Kanto Chemical Co., Ltd.), and 2.26 g of methanesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.). It was then heated up to 150°C and stirred at reflux for about 20 hours. After completion of the reaction, it was diluted with 19.37 g of propylene glycol monomethyl ether acetate, and the precipitate was removed by filtration. The recovered filtrate was added dropwise to methanol solution for reprecipitation. The obtained precipitate was suction-filtered, and the filtrate was dried under reduced pressure at 60° C. overnight. Thus, 6.58 g of a gray powdery resin was obtained. The resulting polymer corresponds to formula (1-3). The weight average molecular weight Mw measured by GPC in terms of polystyrene was 7,500, and the polydispersity Mw / M...

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Abstract

The present invention provides a resist underlayer film forming composition. The resist underlayer film forming composition contains a polymer including a structural unit represented by formula (1) (in formula (1), A is a divalent group including at least two amino groups, wherein the group has a condensed ring structure and is derived from a compound having an aromatic group that is substituted for a hydrogen atom on the condensed ring; each of B1 and B2 independently indicates a hydrogen atom, an alkyl group, a benzene-ring group, a condensed ring group, or a combination thereof; and, alternatively, B1 and B2 may form rings together with carbon atoms to which the aforementioned components are bonded).

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film using an indolocarbazole novolac resin. Background technique [0002] Polymerization of polymer resins has been extensively studied, and among them, polymers containing ring structures such as novolaks are widely used in general fields ranging from microscopic fields such as photoresists to automobiles and housing components. In addition, the above-mentioned polymers have high heat resistance and can be applied to special applications, so they are currently being developed all over the world. In general, monomers having a ring structure include known structures such as benzene, naphthalene, anthracene, pyrene, and fluorene, and these monomers are known to form novolaks with monomers having aldehyde groups. On the other hand, it has been clarified that carbazole having a similar structure to fluorene also exhibits the same characteristics, and that both monomers are pol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G16/02G03F7/20G03F7/26
CPCC08G12/26C09D161/26G03F7/11G03F7/2002G03F7/2059C08G16/02G03F7/20G03F7/26H01L21/027C08G16/0268G03F7/40H01L21/0274
Inventor 德永光齐藤大悟桥本圭祐坂本力丸
Owner NISSAN CHEM IND LTD
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