Method for increasing fluorescence yield and stability of non-lead halogen perovskite material

A technology of perovskite material and fluorescence yield, applied in chemical instruments and methods, luminescent materials, etc., can solve problems such as changing luminescence properties, and achieve simple equipment, improved fluorescence quantum yield and stability, and controllable process. Effect

Inactive Publication Date: 2018-07-27
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has been reported that doping rare earth ions in lead-based perovskite can transfer energy with the

Method used

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  • Method for increasing fluorescence yield and stability of non-lead halogen perovskite material
  • Method for increasing fluorescence yield and stability of non-lead halogen perovskite material
  • Method for increasing fluorescence yield and stability of non-lead halogen perovskite material

Examples

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Embodiment 1

[0049] A method for improving the fluorescence yield and stability of a lead-free halogen perovskite material, which specifically includes the following steps:

[0050] Step 1: Use acetone, isopropanol, and deionized water to clean the glass bottle and ultrasonically for 15 minutes each, and then dry it with a nitrogen gun;

[0051] Step 2: Methylamine chloride (CH3NH3Cl, 0.336g, 3mmol), antimony chloride (SbCl 3 , 0.456g, 2mmol), erbium chloride hexahydrate (ErCl 3 ·6H 2 (2, 0g, 0mmol) was added to glass vial A. Add 4 mL of hydrochloric acid solution (HCl, 37%) into the glass bottle, and seal the bottle mouth. Obtain the growth precursor;

[0052] Step 3: Put the vessel containing the growth precursor into a heating table or muffle furnace, heat it to 80°C, and keep it at constant temperature for several hours;

[0053] Step 4: Slowly cool the vessel from 80°C to 20°C at a rate of 1°C / hour;

[0054] Step 5: Open the mouth of the container and slowly evaporate the solven...

Embodiment 2

[0058] A method for improving the fluorescence yield and stability of a lead-free halogen perovskite material, which specifically includes the following steps:

[0059] Step 1: Use acetone, isopropanol, and deionized water to clean the glass bottle and ultrasonically for 15 minutes each, and then dry it with a nitrogen gun;

[0060] Step 2: Combine cesium iodide (CsI, 0.504g, 3mmol), indium iodide (InI 3 , 0g, 0mmol), europium oxide (Eu 2 o 3 , 0.352g, 1mmol) into glass vial A. Add 4 mL of hydroiodic acid solution (HI, 37%) into the glass bottle, and seal the bottle mouth. Obtain a single crystal growth precursor;

[0061]Step 3: Put the vessel containing the growth precursor into a heating table or muffle furnace, heat it to 180°C, and keep it at a constant temperature for several hours;

[0062] Step 4: Slowly cool down the vessel from 180°C to 20°C at a rate of 10°C / hour;

[0063] Step 5: Open the mouth of the container and slowly evaporate the solvent in the bottle t...

Embodiment 3

[0067] A method for improving the fluorescence yield and stability of a lead-free halogen perovskite material, which specifically includes the following steps:

[0068] Step 1: Use acetone, isopropanol, and deionized water to clean the container of the hydrothermal kettle and sonicate for 15 minutes each, and then blow dry with a nitrogen gun;

[0069] Step 2: Combine cesium bromide (CsBr, 0.636g, 3mmol), bismuth bromide (BiBr 3 , 0.189g, 1mmol), terbium bromide (TbBr 3 , 0.398g, 1mmol) into the hydrothermal kettle A. Add 4 mL of hydrobromic acid solution (HBr, 37%) into the hydrothermal kettle, and seal the hydrothermal kettle. Obtain the growth precursor;

[0070] Step 3: Put the vessel containing the growth precursor into a heating table or muffle furnace, heat to 120°C, and keep at constant temperature for 10 hours;

[0071] Step 4: Slowly cool the vessel from 120°C to 20°C at a rate of 2°C / hour;

[0072] Step 5: Open the vessel and slowly volatilize the solvent in th...

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Abstract

The invention discloses a method for increasing fluorescence yield and stability of a non-lead halogen perovskite material. The method is characterized by comprising steps as follows: rare earth elements RE are introduced into non-lead halogen perovskite A3B2X9, and rare earth element doped non-lead halogen perovskite is formed; B is one of Bi and Sb, and X is one of Cl, Br and I. According to themethod, by means of improvement of the addition quantity and substitution sites of the rare earth elements RE in a non-lead halogen perovskite material product, whole process design of the preparation method as well as parameters and conditions of each step, rare earth ions are utilized to regulate metal-halogen octahedron distortion degree of non-lead perovskite and change the metal ion crystalfield environment, and compared with the prior art, fluorescence yield and stability of the non-lead halogen perovskite material can be increased effectively.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material manufacture and chemical synthesis, and more specifically relates to a method for improving the fluorescence yield and stability of a lead-free halogen perovskite material. Background technique [0002] Perovskite materials are optoelectronic materials that have attracted much attention in recent years. They can be widely used in solar cells, light-emitting diodes, and optical detection. At present, the research object of perovskite is mainly ABX 3 For single perovskite structure materials, the cation A can be organic or inorganic, such as methylammonium (MA + ) or formamidine (FA + ), and the Cs of the inorganic cation + . B is a divalent metal cation such as Pb 2+ , Sn 2+ etc. At present, there are also trivalent ions (Sb 3+ , Bi 3+ , In 3+ etc.) to replace the B position to form the A 3 B 2 x 9 The low-dimensional perovskite structure, X represents halogen, Cl - , Br...

Claims

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Application Information

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IPC IPC(8): C09K11/85C09K11/62C09K11/74C09K11/06
CPCC09K11/06C09K11/7733C09K11/7748C09K2211/182C09K2211/188
Inventor 谭智方李京徽张成牛广达唐江
Owner HUAZHONG UNIV OF SCI & TECH
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