Nitride semiconductor microcavity laser structure capable of achieving electric injection maser and preparation method thereof

A nitride semiconductor, laser technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve problems such as increasing the optical loss of lasers

Pending Publication Date: 2018-07-27
中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

This "mushroom" structure nitride microcavity laser cavity has a low-quality and high-dislocation defect-density AlN/AlGaN buffer layer inside, and these low

Method used

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  • Nitride semiconductor microcavity laser structure capable of achieving electric injection maser and preparation method thereof
  • Nitride semiconductor microcavity laser structure capable of achieving electric injection maser and preparation method thereof
  • Nitride semiconductor microcavity laser structure capable of achieving electric injection maser and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0067] Embodiment 1: Using technical solution 1 to manufacture a GaN self-supporting substrate blue microcavity laser.

[0068] S1: GaN-based blue microcavity laser structures were grown on GaN free-standing substrates using metal-organic chemical vapor deposition (MOCVD), including 1500nm n-GaN contact layers, 130 pairs of n-Al 0.16 Ga 0.84 N / GaN superlattice structure, where each layer is 2.5nm thick as the lower optical confinement layer, 100nm n-In 0.03 Ga 0.97 N lower waveguide layer, 3 pairs of In 0.16 Ga 0.84 N / GaN multiple quantum wells, where each layer of In 0.16 Ga 0.84 N quantum well 2.5nm, each layer of GaN barrier 15nm, 80nm unintentionally doped In 0.03 Ga 0.97 Waveguide layer on N, 20nm p-Al 0.2 Ga 0.8 N electron blocking layer, 100 pairs of p-Al 0.16 Ga 0.84 N / GaN superlattice structure, where each layer is 2.5nm thick as the upper optical confinement layer, and a 30nm p-GaN contact layer, such as figure 1 shown.

[0069] S2: Clean the epitaxial waf...

Embodiment 2

[0074] Embodiment 2: adopting technical scheme 2 to manufacture a GaN-based violet microcavity laser on a Si substrate.

[0075] S1: Using metal organic chemical vapor deposition (MOCVD) equipment to grow a violet microcavity laser structure on a Si substrate, including a 2500nm n-GaN contact layer, 150 pairs of n-Al 0.2 Ga 0.8 N / GaN superlattice structure, where each layer is 3nm thick as the lower optical confinement layer, 100nm n-GaN lower waveguide layer, 3 pairs of In 0.1 Ga 0.9 N / GaN multiple quantum wells, where each layer of In 0.1 Ga 0.9 N quantum well 3nm, each layer of GaN barrier 10nm, 100nm unintentionally doped GaN upper waveguide layer, 20nm p-Al 0.25 Ga 0.75 N electron blocking layer, 100 pairs of p-Al 0.2 Ga 0.8 N / GaN superlattice structure, where each layer thickness is 3nm, as the upper optical confinement layer, 20nm p-GaN contact layer, such as Figure 6 shown.

[0076] S2: Clean the epitaxial wafer with acetone, alcohol, hydrochloric acid and de...

Embodiment 3

[0083] Embodiment 3: adopt technical scheme 3 to manufacture a GaN-based green microcavity laser on a sapphire substrate.

[0084] S1: A GaN-based green microcavity laser structure was grown on a sapphire substrate by metal-organic chemical vapor deposition (MOCVD), including a 500nm n-GaN contact layer, a 500nm heavily doped n-GaN layer, and a 100nm n-In 0.06 Ga 0.94 N lower waveguide layer, 3 pairs of In 0.3 Ga 0.7 N / GaN multiple quantum wells, where each layer of In 0.3 Ga 0.7 N quantum well 2nm, each layer of GaN barrier 8nm, 80nm unintentionally doped In 0.06 Ga 0.94 Waveguide layer on N, 20nm p-Al 0.2 Ga 0.8 N electron blocking layer, 20nm p-GaN contact layer, such as Figure 12 shown.

[0085] S2: Clean the epitaxial wafer with acetone, alcohol, hydrochloric acid and deionized water, deposit 350nm ITO, 50nm Cr and 100nm Au on the p-GaN contact layer in sequence, and anneal at 550°C in a compressed air atmosphere using a rapid annealing furnace 8 minutes to for...

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Abstract

The invention provides a novel nitride semiconductor microcavity laser structure capable of easily achieving electric injection maser and a preparation method thereof. According to the novel nitride semiconductor microcavity laser structure, any one or combination of two or more of materials, such as AlInGaN, ITO, AZO, IGZO, porous GaN, Ag, Al, ZnO, MgO, Si, SiO2, SiNx, TiO2, ZrO2, AlN, Al2O3, Ta2O5, HfO2, HfSiO4 and AlON is adopted as an optical limiting layer of a microcavity laser, so that the thermal resistance of the laser can be greatly reduced on the premise of ensuring strong optical limitation and the performance of a device is improved. The novel nitride semiconductor microcavity laser structure provided by the invention has the advantages of being small in thermal resistance andgood in stability and reliability, and electric injection is easy to implement, the performance of the nitride semiconductor microcavity laser can be greatly strengthened and the life of the nitridesemiconductor microcavity laser can be greatly prolonged.

Description

technical field [0001] The present invention relates to a novel semiconductor microcavity laser structure and its preparation method, in particular to a novel III-V nitride semiconductor microcavity laser structure and its preparation method which is easy to achieve electrical injection and lasing, and belongs to semiconductor optoelectronics technology field. Background technique [0002] III-V nitride semiconductors are called the third-generation semiconductor materials, which have the advantages of large band gap, good chemical stability, and strong radiation resistance; their band gap covers from deep ultraviolet, the entire visible light, to near infrared range, can be used to make light-emitting diodes and lasers, etc. Whispering gallery mode (Whispering-gallery Mode) microcavity laser has the advantages of small mode volume, high quality factor, and low threshold. Microcavity lasers based on III-V nitride semiconductor materials can be used in optical fiber communi...

Claims

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Application Information

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IPC IPC(8): H01S5/042H01S5/32
CPCH01S5/0421H01S5/32
Inventor 孙钱冯美鑫高宏伟周宇杨辉
Owner 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院
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