Nitride semiconductor microcavity laser structure with low electric resistance and low thermal resistance

Abstract

The invention provides a nitride semiconductor microcavity laser structure and a preparation method thereof. A microcavity laser is prepared on the (0001) nitrogen surface of a nitride semiconductor,and p-type ohmic contact on a (0001) gallium surface adopts a whole surface contact manner, so that the series resistance of the microcavity laser is greatly reduced; the heat of the microcavity laseris directly transferred into a heat sink with high heat conductivity, a microcavity laser is prepared on the (0001) nitrogen surface, and the side wall of the microcavity laser is manufactured by using a wet etching method, so that the stability of the microcavity laser can be greatly promoted, the optical limiting layer of the microcavity laser is prepared by using AlInGaN, ITO, AZO, IGZO, porous GaN, Ag, Al, ZnO, MgO, Si, SiO2, SiNx, TiO2, ZrO2, AlN, Al2O3, Ta2O5, HfO2, HfSiO4 and AlOH materials, and high optical limitation is provided. The novel nitride semiconductor microcavity laser structure provided by the invention has the advantages of low electric resistance, low thermal resistance, easy implementation of electric injection, high stability, high reliability and the like, the performance of the nitride semiconductor microcavity laser can be greatly enhanced, and the service life of the nitride semiconductor microcavity laser is greatly prolonged.

Description

technical field [0001] The present invention relates to a low-resistance, low-thermal-resistance nitride semiconductor microcavity laser structure and a preparation method thereof, in particular to a III-V group nitride semiconductor microcavity with low resistance, low thermal resistance and easy electrical injection lasing The laser structure and its preparation method belong to the field of semiconductor optoelectronic technology. Background technique [0002] III-V nitride semiconductors are called third-generation semiconductor materials, which have the advantages of large bandgap, good chemical stability, and strong radiation resistance; their bandgap covers from deep ultraviolet, the entire visible light, to near-infrared range, can be used to make light-emitting diodes and lasers, etc. The Whispering-gallery Mode microcavity laser has the advantages of small mode volume, high quality factor, and low threshold. Microcavity lasers based on III-V nitride semiconductor...

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Problems solved by technology

Not only that, the contact electrode will also affect the light field distribution inside the laser, resulting in an asymmetrical light field distribution, resulting in a decrease in the optical confinement factor of the microcavity laser, an increase in optical loss, and the inability of the microcavity laser to lase

[0010] Second, the existing nitride semiconductor microcavity lasers have a large resistance

However, the p-type layer in the laser is relatively thick, so the series resistance in the device is very large, causing a large amount of electric power to be converted into Joule heat, causing the junction temperature to rise, and affecting the performance and life of the device

In addition, for the existing Si substrate nitride microcavity laser, due to the "mushroom" structure, the n-electrode must be made on the Si substrate, and the current injection needs to pass through the Si substrate. However, there is a gap between the Si substrate and the GaN material. Non-doped, high-resistance AlN/AlGaN (AlN: 6.2eV, GaN: 3.4eV) buffer layer, so the resistance of the device is very large, and it is even more impossible to achieve electrical injection lasing

[0011] Third, the thermal resistance of existing nitride semiconductor microcavity lasers is very high, and the junction temperature of the active region is very high when the device is working, which seriously affects the device performance and life of the microcavity laser.

For nitride microcavity lasers with a "mushroom" structure, the InGaN/InGaN superlattice sacrificial layer or Si substrate at the edge has been removed, and when the microcavity laser is working, the edge area of ​​the device is the main propagation area of ​​the optical field, and the Generates a lot of heat that cannot be conducted directly down to the heat sink, resulting in a high thermal resistance of the device

For the nitride suspended film microcavity structure, as shown in the patent CN 104009393A, since the bottom of the microcavity laser is suspended, a large amount of heat generated by the laser cannot be conducted in time, resulting in a large thermal resistance of the device and a high junction temperature during operation, which not only affects the performance of the laser The internal quantum efficiency and threshold current will also seriously affect the reliability of the device

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