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High energy density sodium-bismuth titanate based thin dielectric film as well as preparation method and application thereof

A high energy storage density, bismuth sodium titanate-based technology, applied in fixed capacitor dielectrics, circuits, capacitors, etc., to achieve the effect of improving energy storage performance, high energy storage efficiency, and good temperature stability

Active Publication Date: 2018-08-14
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(Y.Li, W.Chen, J.Zhou, Q.Xu, H.Sun and R.Xu, Dielectric and piezoelecrtic properties of lead-free (Na 0.5 Bi 0.5 )TiO 3 –NaNbO 3 ceramics, Mater.Sci.Eng: B 112 (2004) 5-9.) However, there are few reports on dielectric thin film materials with high energy storage density, high energy storage efficiency and good temperature stability

Method used

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  • High energy density sodium-bismuth titanate based thin dielectric film as well as preparation method and application thereof
  • High energy density sodium-bismuth titanate based thin dielectric film as well as preparation method and application thereof
  • High energy density sodium-bismuth titanate based thin dielectric film as well as preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.05 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0044] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.05 stoichiometric ratio Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0045] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0046] (4) Pt / Ti / SiO 2 / Si substrate cut to a s...

Embodiment 2

[0053] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.10 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0054] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , The stoichiometric ratio of x=0.10 Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0055] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0056] (4) Pt / Ti / SiO 2 / Si substrate cut t...

Embodiment 3

[0063] (1) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , x = 0.15 stoichiometric ratio Weigh sodium acetate, potassium acetate, bismuth nitrate, strontium acetate dissolved in acetic acid, stirred and heated to boiling for 20 to 30 minutes to prepare solution A.

[0064] (2) According to the general chemical formula Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 , The stoichiometric ratio of x=0.15 Weigh tetrabutyl titanate, and weigh a certain amount of acetylacetone, dissolve tetrabutyl titanate in ethylene glycol methyl ether, stir and heat to 50°C, stir for 20-30 minutes Solution B was prepared.

[0065] (3) Mix precursor solution A and precursor solution B, use acetic acid to adjust the concentration of the solution, use ammonia water to adjust the pH of the solution, and stir at 50°C for 300 minutes to prepare Bi 0.5 (Na 0.8 K 0.2 ) 0.5 TiO 3 -xSrZrO 3 precursor solution.

[0066] (4) Pt / Ti / SiO 2 / Si substrate cut t...

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Abstract

The invention relates to a high energy density sodium-bismuth titanate based thin dielectric film as well as a preparation method and application thereof. The high energy density sodium-bismuth titanate based thin dielectric film is prepared from Bi0.5(Na0.8K0.2)0.5TiO3-xSiZrO3. The preparation method of the high energy density sodium-bismuth titanate based thin dielectric film is a sol-gel methodand comprises the following steps: preparing a precursor solution according to stoichiometric ratio, and subsequently dropwise adding the precursor solution on a cleaned Pt / Ti / SiO2 / Si substrate for rotating and coating; carrying out 150 DEG C heat treatment, 350 DEG C heat treatment and 700 DEG C heat treatment in sequence, and repeating a spin-coating and heat treatment technology until the thickness of the film reaches 500 to 600nm; in addition, a metal top electrode also can be prepared by using a sputtering technology on the thin film. Compared with the prior art, a high energy density thin film capacitor has excellent energy storage performance (energy storage density of the high energy density thin film capacitor is 25J / cm<3> and the energy storage efficiency is 79.16 percent) and good temperature stability.

Description

technical field [0001] The invention belongs to the field of electronic functional materials and devices, and in particular relates to a bismuth sodium titanate-based dielectric film with high energy storage density and its preparation method and application. Background technique [0002] As the main passive energy storage device, dielectric capacitors have fast read charge and discharge rates and ultra-high power density, and are therefore widely used in electronic circuits, which can realize DC blocking, coupling, bypass, filtering, and tuning circuit, energy conversion and other functions. However, its development has encountered a bottleneck at present, and its energy storage density and energy storage efficiency are maintained at a low level. In addition, the temperature stability of current dielectric capacitors is poor. The current commercial dielectric energy storage density is only about 2J / cm 3 , compared with electrochemical capacitors or batteries, its energy s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622H01G4/12
CPCC04B35/475C04B35/62218C04B2235/3201C04B2235/3213C04B2235/3232C04B2235/3244C04B2235/3298H01G4/1218
Inventor 翟继卫陈盼沈波
Owner TONGJI UNIV
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