Silicon anode for lithium ion battery and preparation method of silicon anode
A lithium-ion battery, silicon anode technology, applied in battery electrodes, circuits, electrical components, etc., can solve the problems of complex process and fast battery capacity decay, reduce volume changes, improve initial efficiency, and improve cycle performance. Effect
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Embodiment 1
[0028] Embodiment 1: Copper foil of 6-8 μm is used as a current collector, and a silicon film is formed by chemical vapor deposition or magnetron sputtering coating and deposited on both sides of the copper foil. Through the mask, silicon is isotropically wet-etched with hydrofluoric acid, nitric acid, and acetic acid to form a cylindrical silicon array, and graphene is coated on the silicon surface by using chemical vapor deposition CVD.
[0029] Since the volume change of silicon during charging and discharging is 300%~400%, the maximum available space time between cylinders after expanding 3~4 times is its tangency. Considering that the pole group is extruded in the central axis of the cylinder, the material with a high aspect ratio changes more in the radial direction than in the direction of the central axis. Therefore, it is assumed here that all silicon expands in the radial direction, eliminating the possibility of radial extrusion.
[0030] Such as figure 1 As shown...
Embodiment 2
[0033] 6~8μm copper foil is used as the current collector, and the silicon film is deposited on the front and back sides of the copper foil by chemical vapor deposition or magnetron sputtering coating. Through the mask plate, silicon is anisotropically wet-etched by potassium hydroxide, sodium hydroxide, and ammonia water to form a pyramid-shaped silicon array, and graphene is coated on the silicon surface by using chemical vapor deposition CVD.
[0034] Such as figure 2 , since the area of the regular polygon , where N is the number of sides of the regular polygon, and r is the radius of the inscribed circle. Circular area S of cylindrical cross-section after expansion 2 and the area before expansion S 1 meet S 2 / S 1 =3~4. The distance between the centers of the inscribed circles between regular N-gons on the bottom surface, namely , where a 1 and a 2 are the side lengths of the regular N-gon before and after expansion, r1 and r2 are the inscribed circle radii ...
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