4H-SiC semiconductor neutron detector applied to prompt fission neutron uranium mine logging

A neutron detector and fission neutron technology, applied in the field of nuclear radiation detection, can solve the problems of not fully exploiting the properties of 4H-SiC materials, not fully utilizing the growth process and device preparation technology, etc., to optimize in-situ etching parameters , Improve charge collection efficiency, remove surface damage and stains

Pending Publication Date: 2018-08-28
EAST CHINA UNIV OF TECH
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In recent years, the SiC crystal growth process and device preparation technology have made great progress. Ther

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • 4H-SiC semiconductor neutron detector applied to prompt fission neutron uranium mine logging
  • 4H-SiC semiconductor neutron detector applied to prompt fission neutron uranium mine logging

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A preparation method for a 4H-SiC neutron detector applied to prompt fission neutron uranium ore logging mainly includes the following steps:

[0027] (1) Choose a 6-inch n + type 4H-SiC substrate with a thickness of 380 μm and an N doping concentration of 2×1018 cm -3 , the crystal orientation deviates from {0001}0°( direction), the dislocation density is lower than 3×10 2 cm -2 , and good uniformity, double-sided polishing.

[0028] (2) The cleaning sequence is: clean the substrate with deionized water (DIW) supplemented by ultrasonic cleaning to remove impurity particles on the surface; clean the substrate with a 1:1 mixture of concentrated sulfuric acid and hydrogen peroxide for 15 minutes, and then clean it with deionized water ; soak the substrate with 10% HF solution for 10 minutes, and then clean it with deionized water; in No. 1 cleaning solution (NH 4 OH: H 2 o 2 : DIW three ratios are 3:3:10), then soaked in buffered hydrofluoric acid with a concentra...

Embodiment 2

[0036] A preparation method for a 4H-SiC neutron detector applied to prompt fission neutron uranium ore logging mainly includes the following steps:

[0037] (1) Choose a 6-inch n + type 4H-SiC substrate with a thickness of 380 μm and a N doping concentration of 5×10 18 cm -3 , the crystal orientation deviates from {0001}0°( direction), the dislocation density is lower than 3×10 2 cm -2 , and good uniformity, double-sided polishing.

[0038] (2) The cleaning sequence is: clean the substrate with deionized water (DIW) supplemented by ultrasonic cleaning to remove impurity particles on the surface; clean the substrate with a 1:1 mixture of concentrated sulfuric acid and hydrogen peroxide for 15 minutes, and then clean it with deionized water ; soak the substrate with 10% HF solution for 10 minutes, and then clean it with deionized water; in No. 1 cleaning solution (NH 4 OH: H 2 o 2 : DIW three ratios are 3:3:10), then soaked in buffered hydrofluoric acid with a concentr...

Embodiment 3

[0046] A preparation method for a 4H-SiC neutron detector applied to prompt fission neutron uranium ore logging mainly includes the following steps:

[0047] (1) Choose a 6-inch n + type 4H-SiC substrate with a thickness of 350 μm and an N doping concentration of 1×10 18 cm -3 , the crystal orientation deviates from {0001}0°( direction), the dislocation density is lower than 3×10 2 cm -2 , and good uniformity, double-sided polishing.

[0048] (2) The cleaning sequence is: clean the substrate with deionized water (DIW) supplemented by ultrasonic cleaning to remove impurity particles on the surface; clean the substrate with a 1:1 mixture of concentrated sulfuric acid and hydrogen peroxide for 15 minutes, and then clean it with deionized water ; soak the substrate with 10% HF solution for 10 minutes, and then clean it with deionized water; in No. 1 cleaning solution (NH 4 OH: H 2 o 2 : DIW three ratios are 3:3:10), then soaked in buffered hydrofluoric acid with a concent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Contact resistivityaaaaaaaaaa
Doping concentrationaaaaaaaaaa
Login to view more

Abstract

The invention discloses a 4H-SiC neutron detector applied to prompt fission neutron uranium mine logging. The detector is of a Schottky structure, an n<+> type 4H-SiC crystal serves as a substrate, and a chemical vapor deposition technology is utilized for performing isoepitaxial growth of an n<-> type 4H-SiC epitaxial layer on the front side of the substrate; a magnetron sputtering technology isutilized for respectively depositing multiple layers of metals and protective layers on the back side of the substrate and one side of the epitaxial layer and performing annealing treatment, thereby forming ohmic contact and Schottky contact; and finally, a photoetching technology and the magnetron sputtering technology are utilized for sputtering 6LiF on the Schottky contact to form a neutron conversion layer. In addition to the advantages of conventional semiconductor neutron detectors, the 4H-SiC neutron detector also has the advantages of small volume, easy n/gamma discrimination, high temperature resistance and irradiation resistance. The 4H-SiC neutron detector disclosed by the invention has high detection efficiency and high counting rate and is suitable for the uranium mine loggingenvironment with narrow space, high temperature and intense radiation.

Description

technical field [0001] The invention relates to the technical field of nuclear radiation detection, in particular to a neutron detector based on 4H-SiC semiconductor used in prompt fission neutron uranium ore logging. Background technique [0002] Neutron detectors are key components in prompt fission neutron uranium logging. The neutron detector based on the third-generation wide bandgap semiconductor material 4H-SiC has the advantages of small size, fast response, wide bandgap energy, good energy linearity, high energy linearity, good position resolution, high temperature resistance and radiation resistance, etc. Many advantages. Compared with conventional semiconductor neutron detectors, 3 He proportional counter tube, BF 3 Proportional counter tube and plastic scintillator detector, 4H-SiC neutron detector has incomparable advantages in prompt fission neutron detection. [0003] Neutron detectors based on conventional semiconductor materials such as silicon (Si), ger...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01T3/08G01V5/06
CPCG01T3/08G01V5/06
Inventor 魏雄王仁波张雪昂瞿金辉吴光文黄河
Owner EAST CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap