Antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material and preparation method thereof

A technology of molybdenum disulfide and gas-sensing materials, which is applied in the field of preparation of sensor gas-sensing materials, can solve problems such as being easily oxidized, and achieve the effects of improving conductivity, high specific surface area, and increasing specific surface area.

Inactive Publication Date: 2018-09-18
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, graphene is easily oxidized at high temperature in the air atmosphere, which limits its performance and application to a certain extent (see reference Z.Min, L.X.Wen, X.Yi, Nano Today, 2013, 8(6): 598.)

Method used

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  • Antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material and preparation method thereof
  • Antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material and preparation method thereof
  • Antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A preparation method of antimony-cerium modified molybdenum disulfide / indium oxide gas sensitive material includes the following steps:

[0037] (1) Hydrothermal synthesis of MoS 2 / In 2 O 3 Nanocomposites: 1) Dissolve 1mmol of sodium molybdate, 4mmol of thiourea, and 1mmol of citric acid in 50ml of water, and hydrothermally react at 200℃ for 21h to obtain MoS 2 , As In 2 O 3 Carrier; 2) 1mmolMoS 2 Carrier and 3mmol In 2 O 3 Mix, in 180℃, 18 hours of hydrothermal conditions 2 O 3 Nanoparticles dispersed into MoS 2 The surface of the lamella is obtained;

[0038] (2) In an argon protective atmosphere, use 0.06mmol of antimony trichloride and 0.06mmol of cerium nitrate as the source of antimony and cerium respectively, and the MoS in step (1) 2 / In 2 O 3 Nanocomposite material mixing (the amount of antimony source and cerium source added is: Sb: Ce: In 2 O 3 The molar ratio of is 0.01:0.01:1), hydrothermally reacted at 180℃ for 16h, then centrifuged and dried the product for lat...

Embodiment 2

[0041] A preparation method of antimony-cerium modified molybdenum disulfide / indium oxide gas sensitive material includes the following steps:

[0042] (1) Hydrothermal synthesis of MoS 2 / In 2 O 3 Nanocomposite materials: 1) Dissolve 2mmol of sodium molybdate, 8mmol of thiourea, and 2mmol of citric acid in 50ml of water and hydrothermally react at 200℃ for 18h to obtain MoS 2 , As In 2 O 3 Carrier; 2) 2mmolMoS 2 Carrier and 4mmol In 2 O 3 Mixing, the In 2 O 3 Nanoparticles dispersed into MoS 2 The surface of the lamella is obtained;

[0043] (2) In an argon protective atmosphere, use 0.02mmol of antimony trichloride and 0.02mmol of cerium nitrate as the source of antimony and cerium, respectively, and the MoS in step (1) 2 / In 2 O 3 Nanocomposite material mixing (the amount of antimony source and cerium source added is: Sb: Ce: In 2 O 3 The molar ratio is 0.01:0.01:10), hydrothermally reacted at 240℃ for 24h, then centrifuged, dried the product, and set aside;

[0044] (3) The produc...

Embodiment 3

[0046] A preparation method of antimony-cerium modified molybdenum disulfide / indium oxide gas sensitive material includes the following steps:

[0047] (1) Hydrothermal synthesis of MoS 2 / In 2 O 3 Nanocomposite materials: 1) Dissolve 1mmol of sodium molybdate, 4mmol of thiourea, and 1mmol of citric acid in 30ml of water, and hydrothermally react at 180℃ for 24h to obtain MoS 2 , As In 2 O 3 Carrier; 2) 2mmolMoS 2 Carrier and 8mmol In 2 O 3 Mixing, the In 2 O 3 Nanoparticles dispersed into MoS 2 The surface of the lamella is obtained;

[0048] (2) In an argon protective atmosphere, use 0.05mmol of antimony trichloride and 0.05mmol of cerium nitrate as the source of antimony and cerium, respectively, and the MoS in step (1) 2 / In 2 O 3 Nanocomposite material mixing (the amount of antimony source and cerium source added is: Sb: Ce: In 2 O 3 The molar ratio of is 0.05:0.05:1), hydrothermally react at 200℃ for 20h, then centrifuge, dry the product, and set aside;

[0049] (3) The product ...

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Abstract

The invention relates to an antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material and a preparation method thereof, and belongs to the field of sensor gas sensitive material preparation. The gas sensitive material is prepared from antimony elements, cerium elements, molybdenum disulfide and indium oxide, wherein indium oxide particles are attached to the surface of molybdenum disulfide sheet layer to form a MoS2/In2O3 nanometer compound body; antimony and cerium atoms are positioned in crystal lattices of the MoS2/In2O3 nanometer compound body. The preparation method comprises the following steps that (1) a MoS2/In2O3 nanometer composite material is synthetized by a hydrothermal method; (2) in protection atmosphere, an antimony source, a cerium sourceand the MoS2/In2O3 nanometer composite material are subjected to hydrothermal reaction, centrifugation, drying and calcination; the antimony-cerium modified molybdenum disulfide/indium oxide quaternary gas sensitive material is obtained. Through the instruction of antimony and cerium, the chemical adsorption activation energy of gas to be tested is effectively reduced; the specific surface area and the electric conductivity of the indium oxide semiconductor gas sensitive material are greatly improved; the charge transfer between gas molecules and materials is enhanced; the excellent gas sensitive material is obtained.

Description

Technical field [0001] The invention belongs to the technical field of preparation of sensor gas sensitive materials, and specifically relates to an antimony-cerium modified molybdenum disulfide / indium oxide quaternary gas sensitive material and a preparation method thereof. Background technique [0002] With the rapid economic development and the increasing urbanization trend, some toxic, harmful, flammable and explosive gases are directly discharged into the atmosphere, which not only pollutes the ecological environment and living environment, but also brings great effects to people’s physical and mental health. damage. Looking for a high-sensitivity gas sensor material for monitoring, analysis and alarm is a research hotspot in the field of gas monitoring. A long time ago, people discovered that metal oxide semiconductor gas sensors made of zinc oxide, tin oxide and other materials have broad application prospects and research value. [0003] However, gas-sensing technologies ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06C01G15/00G01N27/00B82Y30/00
CPCB82Y30/00C01G15/00C01G39/06C01P2004/03C01P2004/04C01P2004/82G01N27/00
Inventor 刘晓静赵刚蒋丽段新平刘子年徐锡金
Owner UNIV OF JINAN
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