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Preparation method and battery of n-type double-sided battery

A double-sided battery, N-type technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problem of restricting the overall aesthetics of N-type double-sided batteries, destroying the textured structure of N-type double-sided batteries, and low photoelectric conversion efficiency, etc. problems, achieve the effect of improving photoelectric conversion efficiency, increasing open circuit voltage and short circuit current, and small color difference

Active Publication Date: 2020-05-08
徐州鑫宇光伏科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This treatment process not only destroys the textured structure of the lower surface of the N-type double-sided battery, but also forms irregular spots on the polished surface, resulting in color difference between the upper and lower surfaces of the final N-type double-sided battery, which restricts the quality of N-type double-sided batteries. The overall aesthetics of the double-sided battery will also make the photoelectric conversion efficiency low

Method used

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  • Preparation method and battery of n-type double-sided battery
  • Preparation method and battery of n-type double-sided battery

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preparation example Construction

[0029] The invention provides a preparation method of an N-type double-sided battery.

[0030] A method for preparing an N-type double-sided battery, comprising the steps of:

[0031] S1. Provide an N-type silicon wafer substrate, and carry out alkali texturing on the upper surface and the lower surface of the N-type silicon wafer substrate to form a first pyramid texture on the upper surface of the N-type silicon wafer substrate. A second pyramid texture is formed on the lower surface of the silicon wafer substrate.

[0032] Among them, the main function of alkali texturing is to improve the light trapping and light energy utilization efficiency of N-type double-sided cells. After alkali texturing, a pyramid texture is formed on the upper and lower surfaces of the N-type silicon wafer substrate, also known as Pyramidal suede structure.

[0033] Preferably, sodium hydroxide solution is used for alkali velvet making, 0.4g-0.6g velvet surface is removed from the upper and lowe...

Embodiment 1

[0094] A preparation method of N-type double-sided glass, comprising the steps of:

[0095] S1, provide 50 pieces of N-type silicon wafer substrates, carry out alkali texturing to the upper and lower surfaces of the N-type silicon wafer substrates, to form the first pyramid textured surface on the upper surface of each N-type silicon wafer substrate, A second pyramid texture is formed on the lower surface of the N-type silicon wafer substrate. Wherein, the alkali texturing process is: use a NaOH solution with a mass concentration of 3% to carry out texturing treatment on the upper and lower surfaces of the N-type silicon wafer substrate, and the texturing weight loss is 0.5g.

[0096] S2. The upper surfaces of 50 N-type silicon wafers after texturing are facing each other in pairs, and inserted into the teeth of the quartz boat, and then the quartz boat is placed in the oxidation furnace tube for wet oxygen thermal oxidation, so that the first pyramid is textured. A first sil...

Embodiment 2

[0107] The preparation process of the N-type double-sided battery of this embodiment is generally the same as that of Embodiment 1, except that:

[0108] Between steps S3 and S4, it also includes etching the edge of the N-type silicon wafer by plasma etching.

[0109] Between steps S4 and S5, the following steps are also included: using the ALD method to prepare an aluminum oxide passivation film on the boron diffusion layer, the film thickness of the aluminum oxide passivation film obtained is 8nm, and finally an N-type double-sided battery is obtained, denoted as A2.

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Abstract

The invention relates to a preparation method of an N-type double-faced battery and the battery. The method comprises steps that an upper surface and a lower surface of an N-type silicon wafer substrate are subjected to alkali-based texturing, and the N-type silicon wafer substrate is then thermally oxidized to form a silicon oxide mask; a water film protection layer is formed on a second silicondioxide mask through the water film method; the first silicon oxide mask is removed through first pickling; boron diffusion is carried out on the upper surface of the N-type silicon wafer substrate, and the boron diffusion layer, the water film protection layer and the second silicon dioxide mask are then subjected to second pickling; phosphorus implantation into the second pyramidal suede is carried out through ion implantation doping, and the phosphor-doped N-type silicon wafer substrate is then subjected to third pickling, oxidation and re-annealing; and lastly, SiNx is prepared, and electrodes are prepared. The method is advantaged in that the process is simple, and integral photoelectric conversion efficiency of the N-type double-faced battery is improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a preparation method of an N-type double-sided battery and the battery. Background technique [0002] Among the base materials used in solar cells, N-type crystalline silicon has a longer minority carrier lifetime than P-type crystalline silicon, and the light attenuation performance of N-type crystalline silicon is more stable. Therefore, cell fabrication is performed on N-type silicon wafers. The N-type double-sided battery can absorb light energy on both sides of the battery, making the solar cell more efficient. [0003] At present, the reflectivity of the back of the existing N-type double-sided battery is high, which in turn results in low photoelectric conversion efficiency of the N-type double-sided battery. In addition, in the preparation process of the existing N-type double-sided battery, it is necessary to polish the lower surface of the N-type doub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/068H01L31/18
CPCH01L31/02167H01L31/02168H01L31/0684H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 麻增智崔艳峰杨亚娣蔡文浩陈桂栋钱小立李吉顾文操董建文王伟
Owner 徐州鑫宇光伏科技有限公司