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Cu nano point@BN nanosphere compound, and preparation method and application thereof

A nano-dot and nano-sphere technology is applied in the field of Cu nano-dot@BN nano-sphere composite electromagnetic wave absorbing material and its preparation, achieving the effects of simple preparation process conditions, excellent electromagnetic absorption ability, and easy control.

Inactive Publication Date: 2018-09-21
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After searching, Cu nanodots@BN nanosphere composite electromagnetic absorption materials have not been reported

Method used

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  • Cu nano point@BN nanosphere compound, and preparation method and application thereof
  • Cu nano point@BN nanosphere compound, and preparation method and application thereof
  • Cu nano point@BN nanosphere compound, and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0037] Will figure 1 The device shown is opened, tungsten is used as the cathode, and the anode target consumed is a block made of pure copper powder and boron powder (mass ratio 10:90), which is placed on a cooling water platform. A distance of 30 mm is maintained between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 10 cm was maintained between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.5 MPa, the partial pressure of nitrogen is 3.0 MPa, the DC power supply is connected, and the voltage is 40 V. During the arc discharge process, adjust the working current and voltage to keep relatively stable. The Cu nanodots...

Embodiment 2

[0039] Will figure 1 The device shown is opened, tungsten is used as the cathode, and the anode target consumed is a block made of pure copper powder and boron powder (mass ratio 20:80), which is placed on a cooling water platform. A distance of 2 mm was maintained between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 5 cm was kept between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.01 MPa, the partial pressure of nitrogen is 0.1 MPa, the DC power supply is connected, and the voltage is 10 V. During the arc discharge process, adjust the working current and voltage to keep relatively stable. The Cu nanodots@BN na...

Embodiment 3

[0041] Will figure 1 The device shown is opened, tungsten is used as the cathode, and the anode target consumed is a block made of pure copper powder and boron powder (mass ratio 15:85), which is placed on a cooling water platform. A distance of 10 mm was maintained between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 7 cm was maintained between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.1 MPa, the partial pressure of nitrogen is 1.0 MPa, the DC power supply is connected, and the voltage is 20 V. During the arc discharge process, adjust the working current and voltage to keep relatively stable. The Cu nanodots...

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Abstract

The invention belongs to the technical field of nanomaterial preparation. The invention discloses a Cu nano point@BN nanosphere compound and a preparation method thereof. A microstructure of the compound is formed by embedding nano points into BN nanospheres. The invention further discloses a preparation method of the Cu nano point@BN nanosphere compound. The preparation method is characterized inthat by adopting a plasma arc discharge process, copper powder and boron powder are pressed into a block according to a certain atomic percent to act as an anode target material, tungsten acts as a cathode material, argon and nitrogen are adopted as working gas, a liquid nitrogen cooling wall is placed around the anode, a certain distance is kept between a cathode tungsten electrode and an anodecopper-boron powder block body, and arc discharge is performed between the anode and the cathode, so that the Cu nano point@BN nanosphere compound is obtained on the liquid nitrogen cooling wall. A wave suction coating made of the Cu nano point@BN nanosphere compound has good electromagnetic absorption performance within a range of 2-18 GHz. The preparation process is simple, no post treatment process exits, the cost is low, and industrialized production is easy to achieve.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a Cu nano-dot@BN nano-sphere composite electromagnetic wave absorbing material and a preparation method thereof. Background technique [0002] With the rapid development of electromagnetic technology and the miniaturization and high frequency of electronic components, electromagnetic waves of various frequency bands are flooding people's living space, causing serious electromagnetic pollution and attracting the attention of countries all over the world. Electromagnetic pollution has become the primary physical pollution of the ecological environment in the 21st century. Long-term exposure to electromagnetic radiation can increase the incidence of cancer and seriously affect human health. At the same time, electromagnetic interference also seriously affects the normal operation of electronic circuits and electronic components, causing irreparable economic...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/14B82Y40/00
CPCB82Y40/00B22F9/14B22F2999/00B22F1/065B22F1/054B22F2201/02B22F2201/11
Inventor 刘先国余洁意孙玉萍
Owner HANGZHOU DIANZI UNIV
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