Cu nano point@BN nanosphere compound, and preparation method and application thereof

A nano-dot and nano-sphere technology is applied in the field of Cu nano-dot@BN nano-sphere composite electromagnetic wave absorbing material and its preparation, achieving the effects of simple preparation process conditions, excellent electromagnetic absorption ability, and easy control.

Inactive Publication Date: 2018-09-21
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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After searching, Cu nanodots@BN nanosphere composite ele

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  • Cu nano point@BN nanosphere compound, and preparation method and application thereof
  • Cu nano point@BN nanosphere compound, and preparation method and application thereof
  • Cu nano point@BN nanosphere compound, and preparation method and application thereof

Examples

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Example Embodiment

[0036] Example 1

[0037] will figure 1 The device shown is opened and tungsten is used as the cathode. The anode target material consumed is a block of pure copper powder and boron powder (mass ratio 10:90), which is placed on a cooling water platform. Keep a distance of 30 mm between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and maintain a distance of 10 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.5 MPa and the partial pressure of nitrogen is 3.0 MPa. The DC power supply is connected and the voltage is 40 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Cu ...

Example Embodiment

[0038] Example 2

[0039] will figure 1 The device shown is opened and tungsten is used as the cathode. The anode target material consumed is a block of pure copper powder and boron powder (mass ratio 20:80), which is placed on a cooling water platform. Keep a distance of 2 mm between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and keep a distance of 5 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.01 MPa and the partial pressure of nitrogen is 0.1 MPa. The DC power supply is connected and the voltage is 10 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Cu nanod...

Example Embodiment

[0040] Example 3

[0041] will figure 1 The shown device is opened and tungsten is used as the cathode. The anode target material consumed is a block of pure copper powder and boron powder (mass ratio 15:85), which is placed on a cooling water platform. Keep a distance of 10 mm between the cathode tungsten electrode and the anode target copper-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and keep a distance of 7 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.1 MPa and the partial pressure of nitrogen is 1.0 MPa. The DC power supply is connected and the voltage is 20 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Cu nanod...

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Abstract

The invention belongs to the technical field of nanomaterial preparation. The invention discloses a Cu nano point@BN nanosphere compound and a preparation method thereof. A microstructure of the compound is formed by embedding nano points into BN nanospheres. The invention further discloses a preparation method of the Cu nano point@BN nanosphere compound. The preparation method is characterized inthat by adopting a plasma arc discharge process, copper powder and boron powder are pressed into a block according to a certain atomic percent to act as an anode target material, tungsten acts as a cathode material, argon and nitrogen are adopted as working gas, a liquid nitrogen cooling wall is placed around the anode, a certain distance is kept between a cathode tungsten electrode and an anodecopper-boron powder block body, and arc discharge is performed between the anode and the cathode, so that the Cu nano point@BN nanosphere compound is obtained on the liquid nitrogen cooling wall. A wave suction coating made of the Cu nano point@BN nanosphere compound has good electromagnetic absorption performance within a range of 2-18 GHz. The preparation process is simple, no post treatment process exits, the cost is low, and industrialized production is easy to achieve.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a Cu nano-dot@BN nano-sphere composite electromagnetic wave absorbing material and a preparation method thereof. Background technique [0002] With the rapid development of electromagnetic technology and the miniaturization and high frequency of electronic components, electromagnetic waves of various frequency bands are flooding people's living space, causing serious electromagnetic pollution and attracting the attention of countries all over the world. Electromagnetic pollution has become the primary physical pollution of the ecological environment in the 21st century. Long-term exposure to electromagnetic radiation can increase the incidence of cancer and seriously affect human health. At the same time, electromagnetic interference also seriously affects the normal operation of electronic circuits and electronic components, causing irreparable economic...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/14B82Y40/00
CPCB82Y40/00B22F9/14B22F2999/00B22F1/065B22F1/054B22F2201/02B22F2201/11
Inventor 刘先国余洁意孙玉萍
Owner HANGZHOU DIANZI UNIV
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