A coil, a dielectric cylinder and a plasma chamber

Abstract

The present invention provides a coil, a dielectric cartridge and a plasma chamber. The coil includes a solenoid and a sub-coil arranged on the solenoid; the included angle between the axis of the sub-coil and the axis of the solenoid is greater than 0° and less than 180°, so that the magnetic field generated by the sub-coil and the magnetic field generated by the solenoid Have different directions to increase the horizontal component of the magnetic field lines inside the solenoid. The plasma chamber of the present invention includes a cavity body and a main plasma generating device; the main plasma generating device comprises: a radio frequency power supply, a matching device and a main coil, and the radio frequency power supply is electrically connected with the main coil through the matching device to generate plasma; the plasma chamber The chamber also includes an auxiliary plasma generating device arranged on the side wall of the cavity; the auxiliary plasma generating device includes an excitation power source and a coil of the present invention; the coil is sleeved on the inner side of the side wall of the cavity. Using the plasma chamber of the coil of the invention, the horizontal component of the magnetic force line in the chamber is increased, the surface damage of the wafer is reduced, and the processing rate thereof is improved.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a coil, a dielectric cylinder and a plasma chamber. Background technique [0002] With the development of semiconductor process technology, various semiconductor devices are widely used in semiconductor process. Plasma etching or deposition is a key step in the semiconductor manufacturing process. The working principle of plasma etching or deposition is to process gases (such as argon Ar, helium He, nitrogen N 2 , hydrogen H 2 , Chlorine Cl 2 , boron trichloride BCl 3 , Octafluorocyclobutane C 4 f 8 , Tetrafluoromethane CF 4 , sulfur hexafluoride SF 6 etc.) into the vacuum chamber, the process gas is dissociated, excited, ionized, etc. by means of electrical excitation or optical excitation. Interaction, corresponding etching and deposition. [0003] Complex semiconductor processes are often accompanied by etching and deposition of different semiconductor mater...

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Problems solved by technology

[0007] But the magnetic field produced by the first solenoid 18 in the prior art two is as image 3 As shown, the magnetic field is inhomogeneous in the section along the axial direction of the first solenoid 18, and the magnetic field in the center of the chamber is relatively weak, and the direction of the magnetic field is along the axial direction of the first solenoid 18 and perpendicular to the first solenoid 18. There is almost no magnetic field in the horizontal direction of the axial direction of a solenoid 18; this causes insufficient electronic confinement in the horizontal direction perpendicular to the axial direction of the first solenoid 18 in the first solenoid 18, so that the excitation area of ​​the planar inductive coil is separated Under the constraint of an external magnetic field, the cyclotron collision of electrons is not sufficient, and the electron energy is still high, which is easy to cause damage to the wafer surface; at the same time, the plasma density is not high enough, and the etching rate is still slow

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