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High-modulus beta-Si3N4 whisker preparation process

A production process, -si3n4 technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of unsuitable industrial scale production, high cost of preparation process, high energy consumption, etc., and achieves low cost of preparation process, chemical Good stability and low energy consumption

Inactive Publication Date: 2018-09-28
威海圆环先进陶瓷股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the preparation process of high modulus Si3N4 whiskers is high in cost, serious in environmental pollution, high in energy consumption and long in time, and is not suitable for industrial scale production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A production process for preparing high modulus β-Si3N4 whiskers, comprising the following steps:

[0025] S1, Raw material preparation: Add high-purity a--Si3N4 powder raw materials according to a certain solid-to-liquid ratio, add additives, then place them in a sand mill to grind, and mix them into a suspension.

[0026] Further, the additive in step S1 is yttrium oxide powder, and the content of the yttrium oxide powder is 2%-8%.

[0027] Further, the grinding in step S1 is performed using a ball mill, and the grinding time is 3-4 hours.

[0028] Further, the median diameter in step S1 is not greater than 0.5um.

[0029] S2, pulping: the suspension in step 1 is sprayed, granulated, dried, and then sieved, then put into ammonia water, and pulping is completed after stirring.

[0030] Further, in step S2, the aperture of the sieve screen is 100-120 mesh.

[0031] S3, crystal conversion sintering: inject the prepared emulsion into the graphite crucible in the sinter...

Embodiment 2

[0035] Embodiment two: repeat the method of embodiment one by each variable specified in table 1, list test result in table 2;

Embodiment 3

[0036] Embodiment three: repeat the method of embodiment one by each variable specified in table 1, list test result in table 2;

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PUM

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Abstract

The invention belongs to the technical field of whisker production, discloses a whisker production process and particularly relates to a high-modulus beta-Si3N4 whisker preparation process. The high-modulus beta-Si3N4 whisker preparation process includes steps of raw material preparation, pulping, crystal transformation and sintering, finished whisker product detection and whisker cleaning. The high-modulus beta-Si3N4 whisker preparation process has advantages that pre-briquetting is avoided, and a reaction mixture is directly added into a porous graphite crucible with a boron nitride coatingon the inner wall and is heated according to a sintering curve; environmental pollution in reaction is avoided, high chemical stability and low energy consumption are realized, and the output rate isclose to 100%; in addition, the preparation process is low in cost, free of environmental pollution, low in energy consumption, short in time, simple in process and easy to implement.

Description

technical field [0001] The invention relates to a whisker production process, which belongs to the technical field of whisker production, in particular to a production process for preparing high modulus β-Si3N4 whiskers. Background technique [0002] With the development of science and technology and the progress of society, people's research on whiskers has achieved great results. Silicon nitride whiskers have two crystal forms, a-Si3N4 whiskers and β-Si3N4 whiskers. The methods for preparing silicon nitride whiskers according to the raw materials used include metal silicon nitridation, carbon thermal decomposition of silicon-containing oxides, and gas-phase reaction of silicon-containing halides; The process methods are divided into direct nitriding method, chemical vapor deposition method, carbothermal reduction method, silicon halide vapor phase ammonia decomposition method, self-propagating method and so on. Silicon nitride whiskers have a phase and β phase, both of w...

Claims

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Application Information

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IPC IPC(8): C30B29/38C30B29/62C30B1/04
CPCC30B29/38C30B1/04C30B29/62
Inventor 于利学邹婉如王美玲
Owner 威海圆环先进陶瓷股份有限公司
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