Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Selectively enhanced multi-wavelength metal plasmon resonance structure and its preparation method

A plasmon resonance and multi-wavelength technology, applied in the direction of material excitation analysis, Raman scattering, etc., can solve the problems of inconsistent light field distribution, relative positions of multiple resonance peaks, difficult adjustment of strength and weakness, and selective enhancement of target molecules, etc., to achieve Achieve selective enhancement, increase field enhancement factor, and compress the effect of formant peak width

Active Publication Date: 2021-03-19
SOUTHEAST UNIV
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, asymmetric structures are mostly used to achieve resonance at multiple wavelengths, including asymmetric structures such as ellipsoids, metal rods, and polyhedrons. Figure 2 shows the resonance characteristics of metal nano-ellipsoid structures. When the polarization state of the excitation light is along the When the ball is in different directions, the positions of its resonance peaks are different, but the relative positions and strengths of multiple resonance peaks are not easy to adjust, and the asymmetry of the structure leads to inconsistent distribution of the light field in different resonance modes, which is not conducive to the realization of the target molecule. selective enhancement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Selectively enhanced multi-wavelength metal plasmon resonance structure and its preparation method
  • Selectively enhanced multi-wavelength metal plasmon resonance structure and its preparation method
  • Selectively enhanced multi-wavelength metal plasmon resonance structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings.

[0024] As shown in Fig. 3 (a), the multiple optical field coupled Fano resonance metal plasmon resonance structure for selective enhancement of the present invention includes a metal film 1, an optically transparent dielectric film 2 and a metal Hole array 3, the metal film 1 is a gold film or silver film, and the material of the optically transparent dielectric film 2 is silicon dioxide SiO 2 or magnesium fluoride MgF 2 . Preferably, the thickness of the metal film 1 is greater than 100 nanometers, so as to eliminate the possibility that the interface of the lower layer of the metal film 1 excites surface plasmon resonance and then generates interference. In addition, the diameter of the metal holes in the metal hole array 3 is on the order of micronano.

[0025] Correspondingly, the above-mentioned method for preparing a metal plasmon resonance structure includes ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a multiple-light field coupled Fano resonance metal plasmon resonance structure for selective enhancement, and a preparation method thereof. The resonance structure comprisesa metal film, a dielectric film and a metal hole array, wherein the material of the dielectric film is an optically transparent medium, and the dielectric film is located between the metal hole arrayand the metal film. The resonance structure can simultaneously realize a plurality of multi-wavelength resonances having extremely high electromagnetic field enhancement factors, the above resonance modes have a narrow line width and an equivalent resonance peak intensity, and a resonance light field is mainly localized to metal circular holes. The above characteristics allow the structure to simultaneously enhance the excitation field and the emission field of a target molecule in order to achieve selective detection of the target molecule while ensuring the high sensitivity and the high accuracy of detection. The preparation method of the resonance structure has a simple process, only requires a traditional nano-imprinting process and a thin film evaporation process, has a good repeatability and is convenient to apply.

Description

technical field [0001] The invention relates to a plasmon resonance structure and a preparation method thereof, in particular to a multiple optical field coupled Fano resonance metal plasmon resonance structure for selective enhancement. [0002] technical background [0003] Metal surface plasmon wave is a physical optical phenomenon, which is the collective oscillation of electrons on the metal surface excited by light irradiation on the metal-dielectric interface. In recent ten years, the sensor based on the metal plasmon resonance principle and its application research has made great progress. Due to its fast detection process, real-time data acquisition, convenient operation, no need for labeling, and the ability to maintain the biological activity of molecules, metal surface plasmon resonance sensors have first been widely used in the fields of life sciences and pharmaceuticals, and have gradually penetrated into chemistry, chemical engineering, etc. , materials, food,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65
CPCG01N21/65
Inventor 吕昌贵祁正青钟嫄崔一平
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products