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Making of novel monocrystalline silicon chip suede making additive and simple suede making method

A monocrystalline silicon wafer and additive technology, which is applied in the direction of single crystal growth, single crystal growth, and final product manufacturing, can solve problems such as low conversion efficiency of solar cells, inability to remove monocrystalline silicon wafers, and serious environmental pollution, and achieve shortening Texturing time, reducing water surface tension, and reducing environmental pollution

Inactive Publication Date: 2018-10-16
天津赤霄科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this texturing additive are: both isopropanol and ethanol are volatile, resulting in short solution life, serious environmental pollution, and high cost of texturing (Ship Defense Chemical, 2013, (03): 1-5); second, single Chain Surfactant Textile Additives
The disadvantages of this texturing additive are: hydrophilic single-chain surfactants are often the first choice for texturing, but they cannot remove the organic residues on the surface of monocrystalline silicon wafers, and need to add pretreatment procedures and cumbersome cleaning procedures, etc. (manual Acta Crystallographica Sinica, 2012, (S1); 354-358); In addition, there are some other texturing additives (Shandong Chemical Industry, 2017, 46(15); 45-46), which may cause silicon wafers after texturing to appear Defects such as bright spots and light raindrops
These shortcomings will eventually lead to low conversion efficiency of solar cells

Method used

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  • Making of novel monocrystalline silicon chip suede making additive and simple suede making method
  • Making of novel monocrystalline silicon chip suede making additive and simple suede making method
  • Making of novel monocrystalline silicon chip suede making additive and simple suede making method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Preparation of velvet additives: 2 g rhamnose, 0.5 g didecyl dimethyl ammonium bromide, 3 g glutathione, 2 g catechol, 0.1 g ethylene glycol, 1 g Barium chloride was added to the remaining amount of water (95 ml), and mixed evenly to prepare 100 g of texturing additives.

[0033] (2) Prepare velvet solution: dissolve 200 g of sodium hydroxide in deionized water to obtain 40 kg of alkali solution; add 100 g of velvet additive prepared in step (1) to the alkali solution and mix evenly to obtain velvet liquid.

[0034] (3) Submerge the monocrystalline silicon wafer in the texturing solution described in (2) to perform texturing on the surface of the silicon wafer, the texturing temperature is 75°C, and the texturing time is 900 s.

Embodiment 2

[0036] A kind of texturing method of monocrystalline silicon chip, concrete steps are as follows:

[0037] (1) Preparation of additives for velvet: 3 g rhamnose, 1.5 g didecyl dimethyl ammonium bromide, 5 g glutathione, 2.2 g catechol, 0.5 g ethylene glycol, 2 g Barium chloride was added to the rest of the water (95 ml), and mixed evenly to prepare 100 g of texturing additive.

[0038] (2) Prepare velvet solution: dissolve 80 g of sodium hydroxide in deionized water to obtain 10 kg of alkali solution; add 100 g of velvet additive prepared in step (1) to the alkali solution and mix evenly to obtain velvet solution .

[0039] (3) Submerge the monocrystalline silicon wafer in the texturing solution described in (2) for texturing the surface of the silicon wafer, the texturing temperature is 80°C, and the texturing time is 600 s.

Embodiment 3

[0041] A kind of texturing method of monocrystalline silicon chip, concrete steps are as follows:

[0042] (1) Preparation of additives for velvet: 5 g rhamnose, 1 g didecyl dimethyl ammonium bromide, 4 g glutathione, 5 g catechol, 0.3 g ethylene glycol, 0.5 g Barium chloride was added to the rest of the water (95 ml), and mixed evenly to prepare 100 g of texturing additive.

[0043] (2) Prepare velvet solution: dissolve 100 g of sodium hydroxide in deionized water to obtain 5 kg of alkali solution; add 100 g of velvet additive prepared in step (1) to the alkali solution and mix evenly to obtain velvet solution .

[0044] (3) Submerge the monocrystalline silicon wafer in the texturing solution described in (2) to perform texturing on the surface of the silicon wafer, the texturing temperature is 82°C, and the texturing time is 800 s.

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Abstract

The invention discloses a novel monocrystalline silicon chip suede making additive which comprises the following components: rhamnose, a gemini surfactant, glutathione, catechol, ethylene glycolm barium chloride and residual deionized water. The invention further discloses monocrystalline silicon chip suede making liquid and a simple suede making method; the suede making liquid contains an alkaline solution and the suede making additive; the surface of a monocrystalline silicon chip is subjected to suede making under the suede making method. When suede of the monocrystalline silicon chip is made by adopting the process, the suede making time is shortened; a made suede pyramid is uniform, fine, dense and low in reflectivity; the suede making process is simple, suede making equipment is low,and the environmental pollution is low, therefore, practical values are good.

Description

technical field [0001] The invention relates to the manufacture of a novel monocrystalline silicon wafer texturing additive and a simple texturing method. Background technique [0002] Silicon wafer texturing is a key step in the production of solar cells. It is of great significance to produce suede with good quality and good performance to improve the energy conversion efficiency and performance of solar cells. Alkaline texturing agents have anisotropic corrosion on the surface of monocrystalline silicon wafers, and will form a textured surface with a pyramidal surface structure during texturing. The formation of the suede will cause the surface of the silicon wafer to reflect the incident light multiple times, improve the absorption efficiency of solar energy on the surface of the silicon wafer, and increase the short-circuit current; it can also extend the optical path of light in the silicon wafer and increase the number of photogenerated carriers. ; The tortuous sued...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B33/10H01L31/0236H01L31/18
CPCC30B29/06C30B33/10H01L31/02363H01L31/1804Y02P70/50
Inventor 不公告发明人
Owner 天津赤霄科技有限公司
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