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Preparation method of transition metal chalcogenides and boron nitride or graphene heterojunction

A technology of chalcogen compounds and transition metals, applied in the field of nanomaterials, can solve the problem of lack of band gap in electronic structure, and achieve the effect of easy structure control and simple method

Active Publication Date: 2018-10-16
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But graphene also has a fatal shortcoming: the lack of a band gap in the electronic structure
The present invention utilizes the method of intercalating boron nitride or graphene with chalcogen elements to successfully prepare a heterojunction of transition metal chalcogen compound and boron nitride or graphene. This method is simple and easy, and has a wide range of applications. Not yet reported

Method used

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  • Preparation method of transition metal chalcogenides and boron nitride or graphene heterojunction
  • Preparation method of transition metal chalcogenides and boron nitride or graphene heterojunction
  • Preparation method of transition metal chalcogenides and boron nitride or graphene heterojunction

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Embodiment 1

[0043] Preparation of ruthenium selenide-boron nitride heterojunction.

[0044] 1) Processing Ru(0001) single crystal

[0045] Argon ion sputtering (2kV, 1×10 -5 mbar Ar, 10min), oxygen burning (527 degrees, 1.6×10 -6 mbar O 2, 10min), and then heated the Ru single crystal and kept it at a high temperature of 1200 degrees for 10 minutes for annealing, until no impurities were observed by X-ray photoelectron spectroscopy and scanning tunneling microscope.

[0046] 2) Growth of boron nitride on Ru(0001) surface

[0047] Boron nitride is grown on the Ru(0001) substrate by chemical vapor deposition, the boron source used is borazine, which is liquid at room temperature, and the air in the borazine is removed by liquid nitrogen before use . Then the cleaned Ru(0001) substrate was heated to 750°C and passed through 5.2×10 -8 mbar's borazine, borazine dissociates and splices on the substrate to obtain boron nitride. By adjusting the passage time of borazine, the coverage of bor...

Embodiment 2

[0051] Preparation of platinum selenide-boron nitride heterojunction.

[0052] 1) Processing Pt(111) single crystal

[0053] Argon ion sputtering (2kV, 1×10 -5 mbar Ar, 10min), oxygen burning (527 degrees, 1.6×10 -6 mbar O 2 ,10min), and then heated the Pt single crystal and maintained it at a high temperature of 850°C for 10 minutes for annealing, until no impurities were observed by X-ray photoelectron spectroscopy and scanning tunneling microscope.

[0054] 2) Growth of boron nitride on the surface of Pt(111)

[0055] Boron nitride is grown on a Pt(111) substrate by chemical vapor deposition. The boron source used is borazine. Borazine is liquid at room temperature. Before use, liquid nitrogen is used to remove the air in borazine. . Then the cleaned Pt(111) substrate was heated to 760 degrees and passed through 5.2×10 -7 mbar's borazine, borazine dissociates and splices on the substrate to obtain boron nitride. By adjusting the passage time of borazine, the coverage ...

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Abstract

The invention relates to a preparation method of a transition metal chalcogenides and boron nitride or graphene heterojunction. The method comprises the steps of (1) growing boron nitride or grapheneon a transition metal substrate in a vacuum environment; (2) depositing selenium on the surface of the boron nitride or graphene by using a physical vapor deposition method; (3) carrying out annealingtreatment to make surface selenium intercalated into the lower part of the boron nitride or graphene structure and react with the surface of the metal substrate to form layered transition metal chalcogenides; and (4) finally forming a heterostructure of the boron nitride(or graphene) / transition metal chalcogenides. The preparation method of a two-dimensional material heterojunction from top to bottom is simple and feasible, the structure is easy to control, the material can be extended to other chalcogens, the preparation method is suitable for preparation of all transition metal chalcogenides and boron nitride or graphene heterojunctions and a good foundation is laid for preparation and research of subsequent electronic devices.

Description

technical field [0001] The invention relates to a preparation method of a transition metal chalcogen compound and boron nitride or graphene heterojunction, belonging to the technical field of nanometer materials. Background technique [0002] Two-dimensional atomic crystals have attracted widespread attention due to their unique physical and chemical properties. It is a material with covalent bonds in the layers and van der Waals forces between the layers. The most typical ones are graphene, boron nitride, and two-dimensional transition metal chalcogenides. Graphene has a unique electronic structure: the conduction band and the valence band intersect at the Fermi level, and the carriers can be regarded as massless Dirac fermions. Graphene has high electron mobility, high light transmittance, etc., so it has important applications in the fields of microelectronic devices, high-performance batteries, and transparent conductive films. But graphene also has a fatal shortcoming...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/20H01L29/16H01L29/267
CPCH01L29/0646H01L29/0688H01L29/1606H01L29/267
Inventor 傅强董爱义包信和
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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