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Cr nanodot @BN nanosphere compound as well as preparation method and application thereof

A technology of nano-dots and nano-spheres, applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effects of excellent electromagnetic absorption ability, easy control, and simple preparation process conditions

Inactive Publication Date: 2018-10-30
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Cr nanodot @BN nanosphere compound as well as preparation method and application thereof
  • Cr nanodot @BN nanosphere compound as well as preparation method and application thereof
  • Cr nanodot @BN nanosphere compound as well as preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Will figure 1 The device shown is opened, tungsten is used as the cathode, and the consumed anode target is composed of pure chromium powder and boron powder (mass ratio 10:90) pressed into a block, which is placed on a cooling water platform. A distance of 30 mm is maintained between the cathode tungsten electrode and the anode target chromium-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 10 cm was maintained between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.5 MPa, the partial pressure of nitrogen is 3.0 MPa, the DC power supply is connected, and the voltage is 40 V. During the arc discharge process, adjust the working current and voltage to keep relatively sta...

Embodiment 2

[0039] Will figure 1 The device shown is opened, tungsten is used as the cathode, and the anode target consumed is a block made of pure chromium powder and boron powder (mass ratio 20:80), which is placed on a cooling water platform. A distance of 2 mm is maintained between the cathode tungsten electrode and the anode target chromium-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 5 cm was kept between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.01 MPa, the partial pressure of nitrogen is 0.1 MPa, the DC power supply is connected, and the voltage is 10 V. During the arc discharge process, adjust the working current and voltage to keep relatively stable. The Cr nanodots@BN...

Embodiment 3

[0041] Will figure 1 The device shown is opened, and tungsten is used as the cathode, and the anode target consumed is a block made of pure chromium powder and boron powder (mass ratio 15:85), which is placed on a cooling water platform. A distance of 10 mm is maintained between the cathode tungsten electrode and the anode target chromium-boron powder block. During the whole process, water is passed to cool the furnace body and the anode placement platform. A liquid nitrogen cooling wall was placed around the anode platform, and a distance of 7 cm was maintained between the liquid nitrogen cooling wall and the anode target. After the whole working chamber is evacuated by the vacuum system, argon and nitrogen are introduced, the partial pressure of argon is 0.1 MPa, the partial pressure of nitrogen is 1.0 MPa, the DC power supply is connected, and the voltage is 20 V. During the arc discharge process, adjust the working current and voltage to keep relatively stable. The Cr n...

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Abstract

The invention belongs to the technical field of nanometer material preparation, and discloses a Cr nanodot @BN nanosphere compound. The microstructure of the compound is that Cr nanodots embedded intoa BN nanosphere. The invention further discloses a preparation method of the Cr nanodot @BN nanosphere compound. According to the preparation method, a plasma arc discharge method is adopted, chromium powder and boron powder are pressed into a block body according to a certain atomic percentage to serve as an anode target material, tungsten is adopted as a cathode material, argon and nitrogen areused as working gas, a liquid nitrogen cooling wall is placed around the anode, a certain distance is kept between a cathode tungsten electrode and the anode chromium-boron powder block body, an arcdischarge is formed between the anode and the cathode, the Cr nanodot @BN nanosphere compound can be obtained on the liquid nitrogen cooling wall, and a wave-absorbing coating prepared from the nanometer compound has good electromagnetic absorption performance within the range of 2-18 GHz. According to the preparation method of the Cr nanodot @BN nanosphere compound, the preparation process is simple, the post-treatment procedure is avoided, the cost is low, and industrial production is easy to realize.

Description

technical field [0001] The invention belongs to the technical field of material preparation, and in particular relates to a Cr nanodot@BN nanosphere composite electromagnetic wave absorbing material and a preparation method thereof. Background technique [0002] With the rapid development of electromagnetic technology and the miniaturization and high frequency of electronic components, electromagnetic waves of various frequency bands are flooding people's living space, causing serious electromagnetic pollution and attracting the attention of countries all over the world. Electromagnetic pollution has become the primary physical pollution of the ecological environment in the 21st century. Long-term exposure to electromagnetic radiation can increase the incidence of cancer and seriously affect human health. At the same time, electromagnetic interference also seriously affects the normal operation of electronic circuits and electronic components, causing irreparable economic l...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/14B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00B22F9/14B22F1/07B22F1/065B22F1/054
Inventor 刘先国余洁意孙玉萍
Owner HANGZHOU DIANZI UNIV
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