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A method for preparing metal oxide thin film transistors at low temperature

A technology of oxide thin films and transistors, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high process temperature of polysilicon thin film transistors, poor uniformity of transistor performance, and low field effect mobility. Low, good product performance, and the effect of environmental protection

Active Publication Date: 2020-10-02
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, amorphous silicon TFT has some inherent physical obstacles: such as high photosensitivity, low field-effect mobility, and opacity of materials, etc., making it suitable for OLED pixel drive and LCD and OLED peripheral drive circuit integration. However, polysilicon thin film transistors have high process temperature, high production cost, and poor uniformity of transistor performance, which is not suitable for large-size flat panel display and flexible display applications.

Method used

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  • A method for preparing metal oxide thin film transistors at low temperature
  • A method for preparing metal oxide thin film transistors at low temperature
  • A method for preparing metal oxide thin film transistors at low temperature

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preparation example Construction

[0043] Such as Figure 1-Figure 7 As shown, the present invention provides a method for preparing a metal oxide thin film transistor at a low temperature. The present invention is a method for preparing a metal oxide thin film transistor at a low temperature based on a solution method. On the premise of ensuring the electrical performance of the transistor, the low temperature preparation of TFT is further realized. , thereby reducing the influence of the preparation process on the flexible substrate. The method comprises the steps of:

[0044] (1), In 2 o 3 Preparation of the precursor solution of the base or ZnO-based oxide: Here, In 2 o 3 The preparation of the precursor solution is taken as an example. Dissolve indium nitrate in an aqueous solvent such as deionized water or ammonia water, and stir magnetically at 0-100°C for 0.5-24 hours to obtain a clear and transparent In 2 o 3 Precursor, where In 2 o 3 The concentration of the precursor solution is 0.01-0.5mol / L...

Embodiment 1

[0060] The substrate in this embodiment is a p-doped thermally oxidized silicon wafer purchased commercially and polished on one side, and the thickness of the thermally oxidized silicon is 100 nm. Indium nitrate powder was purchased from Alfa Company. Concrete preparation process is as follows:

[0061] Step 1: Preparation of In 2 o 3 For the precursor solution, dissolve indium nitrate in deionized water according to 0.2mol / L, and stir at room temperature on a magnetic stirring table for 6 hours to obtain a colorless and transparent In 2 o 3 Precursor solution, let it stand for later use; filter the precursor solution with a 0.22 μL water filter before use to remove insoluble impurities;

[0062] Step 2: Substrate cleaning: Clean the thermally oxidized silicon wafer after cutting with deionized water, acetone, isopropanol, and deionized water in an ultrasonic cleaning machine for 10 minutes each, and blow dry with nitrogen;

[0063] Step 3: If figure 1 As shown, the sur...

Embodiment 2

[0070] Relative to Example 1, after carrying out steps 1-4, discard the NH of step 5 3 For the plasma treatment process, proceed directly to steps 6-8. The effect of embodiment 2 is to serve as the comparison of embodiment 1, compare the pre-annealed In 2 o 3 film in the presence or absence of NH 3 The influence of plasma treatment process conditions on the electrical properties of its TFT, such as Figure 7 shown.

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Abstract

The invention provides a low-temperature preparation method of a metal oxide thin film transistor. According to the method, NH3 plasma is used to process a pre-annealed In2O3 film in the low-temperature In2O3 film preparation process, the preparation temperature is further reduced, and the In2O3 film with high performance can be prepared by annealing for 4 hours in the atmosphere at the temperature of 130 DEG C. The method has the advantages of low cost, simple technology, high product performance, environment friendly preparation environment and wide application prospects; and the TFT is muchmore compatible with a flexible sbustrate.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing metal oxide thin film transistors at low temperature. Background technique [0002] Research on flexible display devices has gradually attracted the attention of researchers at home and abroad. Flexible display devices have high potential advantages, such as their thinness, unbreakability, and bendability. Mobile phones, computers, and TVs have become an indispensable part of modern human life. With the continuous upgrading of consumer experience, the current rapid growth in demand for portable mobile devices and wearable display products has made flexible displays continue to be favored by the industry. extensive attention. Looking back at the 2017 SID Display Week, as an important part of the exhibition, flexible display and printing technology have shown the direction of future display development: flexible, foldable, stretchable, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/477H01L21/02H01L21/34
CPCH01L21/0242H01L21/02565H01L21/02664H01L21/477H01L29/66969
Inventor 喻志农栗旭阳程锦陈永华郭建
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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