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Cuprous oxide/gallium oxide pn junction-based flexible ultraviolet photoelectric detector and preparation method thereof

A technology of cuprous oxide and electrical detectors, which is applied in nanotechnology, circuits, electrical components, etc. for materials and surface science, and can solve problems such as limiting the application range of devices, weak bonding of substrates, and difficulty in making electrodes , to achieve the effect of low cost, high utilization efficiency and easy operation

Active Publication Date: 2018-11-06
东营睿港招商服务有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Commonly used ultraviolet photodetection devices grow semiconductor thin films on rigid substrates, such as silicon wafers, sapphire and quartz substrates, etc. These devices cannot be bent, which limits the application range of the devices
Moreover, most of the current flexible substrates are polymer compounds that cannot withstand high temperatures. Therefore, choosing a flexible substrate that can withstand high temperatures to prepare gallium oxide materials can realize the flexibility of gallium oxide-based solar-blind ultraviolet detectors. bendable properties
[0004] So far, there are few reports on flexible ultraviolet photodetectors. Although there are existing literature reports (Chinese patent CN201710012296.2) solar-blind ultraviolet photodetectors based on flexible gallium oxide nanobelts, such detectors are The pre-synthesized gallium oxide nanoribbons are transferred to the flexible substrate, which has the disadvantages of difficult electrode fabrication, poor stability, and weak adhesion to the substrate.

Method used

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  • Cuprous oxide/gallium oxide pn junction-based flexible ultraviolet photoelectric detector and preparation method thereof
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  • Cuprous oxide/gallium oxide pn junction-based flexible ultraviolet photoelectric detector and preparation method thereof

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Effect test

Embodiment 1

[0037] The preparation method of the flexible ultraviolet photodetector based on cuprous oxide / gallium oxide pn junction comprises the following steps:

[0038] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0039] (2) Place the glass fiber cloth substrate on the heating stage, set the temperature of the heating stage to 100°C, place a grain of Ga metal on the glass fiber cloth substrate, wait for the gallium metal to melt, use the glass slide to dissolve the liquid Ga metal Embossed into a sheet, after cooling, a Ga metal sheet / glass fiber cloth substrate is formed for use;

[0040] (3) Ga 2 o 3 and Cu 2 The O target material is respectively placed on the target platform position of the magnetron sputtering deposition system, and the Ga metal sheet / glas...

Embodiment 2

[0049] The preparation method of the flexible ultraviolet photodetector based on cuprous oxide / gallium oxide pn junction comprises the following steps:

[0050] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0051] (2) Place the glass fiber cloth substrate on the heating stage, set the temperature of the heating stage to 100°C, place a grain of Ga metal on the glass fiber cloth substrate, wait for the gallium metal to melt, use the glass slide to dissolve the liquid Ga metal Embossed into a sheet, after cooling, a Ga metal sheet / glass fiber cloth substrate is formed for use;

[0052] (3) Ga 2 o 3 and Cu 2 The O target material is respectively placed on the target platform position of the magnetron sputtering deposition system, and the Ga metal sheet / glas...

Embodiment 3

[0057] The preparation method of the flexible ultraviolet photodetector based on cuprous oxide / gallium oxide pn junction comprises the following steps:

[0058] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0059] (2) Place the glass fiber cloth substrate on the heating stage, set the temperature of the heating stage to 100°C, place a grain of Ga metal on the glass fiber cloth substrate, wait for the gallium metal to melt, use the glass slide to dissolve the liquid Ga metal Embossed into a sheet, after cooling, a Ga metal sheet / glass fiber cloth substrate is formed for use;

[0060] (3) Ga 2 o 3 and Cu 2 The O target material is respectively placed on the target platform position of the magnetron sputtering deposition system, and the Ga metal sheet / glas...

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Abstract

The invention discloses a cuprous oxide / gallium oxide pn junction-based flexible ultraviolet photoelectric detector and a preparation method thereof. The cuprous oxide / gallium oxide pn junction-basedflexible ultraviolet photoelectric detector comprises a glass fiber cloth substrate, a beta-Ga2O3 thin film, a beta-Ga2O3 nanocolumn array, a Cu2O thin film layer and two Ti / Au thin film electrodes, wherein the beta-Ga2O3 thin film is arranged on the glass fiber cloth substrate; the beta-Ga2O3 nanocolumn array is distributed on the beta-Ga2O3 thin film; the Cu2O thin film layer is arranged at oneside, in contact with a non-beta-Ga2O3 thin film, of the beta-Ga2O3 nanocolumn array; the Cu2O thin film layer and the beta-Ga2O3 nanocolumn array form a Cu2O / beta-Ga2O3 pn junction structure; one Ti / Au thin film electrode is located at the upper part of the Cu2O thin film layer and the other Ti / Au thin film electrode is located at the upper part of the beta-Ga2O3 thin film. The cuprous oxide / gallium oxide pn junction-based flexible ultraviolet photoelectric detector is stable in performance and sensitive in reaction, has a good ultraviolet photoelectric response and has a great application prospect in the fields, such as wearable devices, ultraviolet detection and intelligent textiles.

Description

technical field [0001] The invention relates to a flexible photodetector and a preparation method thereof, in particular to a flexible ultraviolet photodetector based on a cuprous oxide / gallium oxide pn junction and a preparation method thereof. technical background [0002] β-Ga 2 o 3 It is an n-type ultra-wide bandgap semiconductor material with good light transmittance, high chemical stability and thermal stability. The field of detectors has a wide range of applications. Due to β-Ga 2 o 3 The band gap is large and can only absorb ultraviolet light. In order to increase its absorption range of the spectrum and improve the efficiency of light utilization, it is often combined with a narrow band gap semiconductor material to form a composite material or a heterojunction. Among many narrow-bandgap semiconductor materials, Cu 2 O is a natural p-type metal oxide, which has good optical properties in the visible light region and has many advantages such as low price, abun...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/18B82Y30/00
CPCB82Y30/00H01L31/109H01L31/18Y02P70/50
Inventor 张权岳
Owner 东营睿港招商服务有限责任公司