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A kind of men coating with high specific surface area and its preparation method and supercapacitor

A high specific surface area, coating technology, used in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of low porosity, poor stability, small specific surface area, etc.

Active Publication Date: 2020-08-11
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, the present invention provides a MeN coating with a high specific surface area and its preparation method and supercapacitor, which can effectively solve the technical defects of low porosity, small specific surface area and poor stability in current nitride-based coatings

Method used

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  • A kind of men coating with high specific surface area and its preparation method and supercapacitor
  • A kind of men coating with high specific surface area and its preparation method and supercapacitor
  • A kind of men coating with high specific surface area and its preparation method and supercapacitor

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preparation example Construction

[0035] The invention provides a kind of preparation method of the MeN coating of high specific surface area, comprises the following steps:

[0036] a) Using physical vapor deposition, in an atmosphere of nitrogen, or a mixed gas of nitrogen and an inert gas, evaporate or sputter a Me metal target on the surface of the substrate to generate MeN to obtain a first MeN coating, wherein the Me metal The target material includes a simple substance of a metal or a simple substance of a transition metal;

[0037] b) performing ion source etching on the surface of the first MeN coating to obtain the MeN coating.

[0038] Preferably, the physical vapor deposition method in step a) is an arc ion plating deposition method.

[0039] Specifically, step a) uses arc ion plating to deposit a MeN coating, specifically comprising the following steps:

[0040] a1) Heat the working temperature of the deposition chamber to 300°C-400°C, heat the substrate to 350°C-450°C, and extract the gas in th...

Embodiment 1

[0064] The embodiment of the present invention provides the first specific implementation mode, and the specific steps are as follows:

[0065] (1) Substrate pretreatment:

[0066] Use a solvent to clean the substrate; the specific process of the solvent cleaning treatment is: first use acetone to ultrasonically clean for 10 minutes, then use 98% alcohol solution to ultrasonically clean for 10 minutes, take it out and then use deionized water to ultrasonically clean for 3 minutes; then carry out ion source bombardment cleaning Treatment: the substrate was cleaned with an ion source for 30 minutes to obtain a pretreated substrate; wherein, the ambient pressure of the ion source bombardment cleaning treatment was 1.0 Pa, the Ar gas flow rate was 50 sccm, and the substrate bias voltage was -1000V.

[0067] (2) Use a DC arc power supply cathode to evaporate Hf target on the surface of the substrate after pretreatment, in N 2 Reactive deposition of HfN coating in gas is as follows...

Embodiment 2

[0070] The embodiment of the present invention provides a second specific implementation manner, and the specific steps are as follows:

[0071] (1) Substrate pretreatment: the specific steps are the same as in Example 1.

[0072] (2) the surface of the substrate after the pretreatment obtained in step (1) uses a direct current arc power source to evaporate the Hf target at the cathode, in N2 Reactive deposition in the atmosphere to obtain the first HfN coating: the specific steps are the same as in Example 1.

[0073] (3) Use Hall ion source to etch the first HfN coating: after the deposition of the first HfN coating is completed, maintain the chamber temperature at 350°C and the substrate temperature at 400°C, turn off the N 2 gas, Ar gas and Kr gas are introduced, the Ar gas flow rate is 200sccm, and the Kr gas flow rate is 150sccm; adjust the deposition chamber pressure to 1.0Pa, turn on the Hall ion source, load the substrate with a negative bias of -600V, etch the first ...

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Abstract

The invention belongs to the nitride coating technical field, and especially relates to a MeN coating with a high specific surface area and a preparation method and application thereof; the preparation method of the MeN coating with a high specific surface area comprises the following steps: 1, using a physical vapour deposition method to evaporate or sputter a Me metal target in nitrogen or nitrogen and inert gas mixed gas atmosphere, forming MeN and depositing same on a substrate surface, thus obtaining a first MeN coating, wherein Me comprises metal simple substance or transition metal simple substance; 2, using an ion source etching method to process the first MeN coating surface, thus obtaining a MeN coating. The existing nitride base coating is low in amount of porosity, small in specific surface area, and poor in stability; the MeN coating with the high specific surface area and the preparation method can solve said problems.

Description

technical field [0001] The invention belongs to the technical field of nitride coatings, in particular to a MeN coating with a high specific surface area, a preparation method thereof and a supercapacitor. Background technique [0002] Supercapacitor is an emerging energy storage device, which has the advantages of high capacity, fast charging and discharging, and long service life. Compared with batteries, it has higher power density and higher energy density than capacitors. Power vehicles, wind power and electricity balance of photovoltaic gap energy have an irreplaceable role and development potential, and have been listed as development priorities by many countries. However, the currently used supercapacitor materials (such as carbon, metal oxides, and conductive polymers, etc.) have the problem of rapid capacity decay during high-current charging and discharging, and the problem of life is the bottleneck of their application. In recent years, transition metal nitrides...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/24H01G11/30H01G11/86
CPCH01G11/24H01G11/30H01G11/86Y02E60/13
Inventor 王启民高则翠吴正涛张腾飞黄雪丽
Owner GUANGDONG UNIV OF TECH
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