Dielectric film with ultrahigh discharge energy storage density and preparation method of dielectric film

A technology of energy storage density and dielectric thin film, which is applied in the direction of fixed capacitor dielectric, fixed capacitor components, circuits, etc., can solve the problems of complex film capacitor technology and the inability to greatly reduce the production cost, and achieve energy storage density. The effect of improving the withstand voltage strength and reducing redistribution

Active Publication Date: 2018-12-04
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although lead-free systems such as barium titanate-based energy storage films have also received a lot of attention, for example, the highest energy storage density of 124J / cm can be obtained by stacking breakdown-resistant sublayers on both sides of the barium titanate film. 3 (the patent publication number is CN101728089A), but its laminated structure further complicates the process of film capacitors, making the preparation cost unable to be greatly reduced. Therefore, it is necessary to develop a new high-energy-storage-density film material with simple molding process and low raw material prices. very necessary

Method used

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  • Dielectric film with ultrahigh discharge energy storage density and preparation method of dielectric film
  • Dielectric film with ultrahigh discharge energy storage density and preparation method of dielectric film
  • Dielectric film with ultrahigh discharge energy storage density and preparation method of dielectric film

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Embodiment 1

[0032] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.5 o 3 .

[0033] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0034] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material was dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0035] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0036] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel w...

Embodiment 2

[0042] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.55 o 3 .

[0043] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0044] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material was dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0045] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0046] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel ...

Embodiment 3

[0053] A dielectric thin film with ultra-high discharge energy storage density, its expression is BiMg 0.5 Ti 0.60 o 3 .

[0054] The preparation method of the above-mentioned dielectric thin film with ultra-high discharge energy storage density comprises the following steps:

[0055] (1) Weigh Bi(NO 3 ) 3 ·5H 2 O, Mg(CH 3 COO) 2 4H 2 O, C 16 h 36 o 4 Ti raw material, the prepared raw material was dissolved in a mixed solvent of acetic acid, distilled water, acetylacetone and ethylene glycol methyl ether with a volume ratio of 11:2:1:35, and stirred at room temperature 25°C for 24 hours to obtain a stable precursor body solution;

[0056] (2) Aging the precursor solution obtained in step (1) at room temperature for 24 hours to obtain a uniformly dispersed sol for spin coating;

[0057] (3) Add the sol obtained in step (2) dropwise on the substrate at a low speed of 800 rpm by spin coating, and then shake off the sol at a high speed of 4600 rpm to obtain a wet gel ...

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Abstract

The invention provides a dielectric film with ultrahigh discharge energy storage density and a preparation method of the dielectric film. The dielectric film has a chemical formula: BiMg0.5TixO3, wherein x is equal to 0.50-0.85, the dielectric strength at room temperature reaches up to 5000 kV / cm, and the effective discharge energy storage density reaches up to 125.7 J / cm<3>. The preparation method of the dielectric film with ultrahigh discharge energy storage density comprises the steps as follows: (1) dissolving Bi(NO3)3, Mg(CH3COO)2 and Cl6H36O4Ti serving as raw materials into a mixed solution to obtain a stable precursor solution; (2) standing and ageing the prepared precursor solution to obtain uniformly-dispersed sol for spin coating; (3) coating a substrate with the sol by using a spin-coating method, and carrying out drying and pyrolysis to obtain a gel film; and (4) rapidly heating the obtained gel film in a rapid thermal treatment furnace to a required temperature, and carrying out crystallization treatment on a crystal form of the film to obtain the dielectric film with ultrahigh discharge energy storage density. The method is simple in preparation process, low in cost and pollution-free, and the prepared material has good energy storage properties.

Description

technical field [0001] The invention relates to the technical field of thin film materials applied to electronic components, in particular to a dielectric thin film and a preparation method. Background technique [0002] Capacitors are an indispensable passive component in modern electronic equipment. It has a series of important functions, such as voltage smoothing, pulse discharge, filtering, coupling, decoupling, power regulation, etc. With the increasing demand for the performance and efficiency of electronic equipment in industrial production, the requirements for capacitor materials are also increasing, and higher requirements are put forward for the miniaturization of capacitor materials. Due to the small electric field strength of the bulk energy storage medium, the further improvement of the energy storage density of the bulk material is limited, so the energy storage thin film has become a new research direction for energy storage capacitors. [0003] At present,...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622C04B35/624H01G4/12
CPCC04B35/475C04B35/62218C04B35/624C04B2235/3206C04B2235/6567H01G4/1218
Inventor 刘韩星谢鹃尧中华郝华曹明贺谢颜江
Owner WUHAN UNIV OF TECH
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