Structure and manufacturing method of beam-island-membrane integrated resonant pressure sensor
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHINA JILIANG UNIV
- Publication Date
- 2020-08-11
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention relates to a beam-island-membrane integrated resonant pressure sensor structure and a manufacturing method. Applicable to the field of microelectromechanical systems (MEMS). Background technique
[0002] The resonant pressure sensor is a type of sensor based on the change of the resonant frequency of the resonator as the pressure changes. The measured pressure causes the equivalent stiffness of the resonator to change, thereby changing the resonant frequency of the resonator, and the measured pressure is obtained by measuring the change of the resonant frequency. As the core component of the resonant pressure sensor, the resonator works in the state of mechanical resonance, and the output frequency signal is not affected by the circuit noise. The signal-to-noise ratio and resolution are high, and the anti-interference ability is strong. It is easy to connect with the field bus and can save the price. Expensive A / D conversion device redu...