Structure and manufacturing method of beam-island-membrane integrated resonant pressure sensor

A pressure sensor and resonant technology, applied in the field of micro-electronic mechanical systems, can solve the problems of nonlinear changes of excitation force and detection signal, increase the difficulty of closed-loop control, and be unfavorable for arranging varistors. The effect of detection sensitivity

Active Publication Date: 2020-08-11
CHINA JILIANG UNIV
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  • Claims
  • Application Information

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Problems solved by technology

The latter requires the resonant beam to be along the crystal direction, which is not conducive to arranging the varistor
At present, the beam-island-membrane integrated structural resonant pressure sensor adopts the electrostatic excitation / capacitance detection mode. When the pressure-sensitive diaphragm is deformed under pressure, the electrode gap between the excitation capacitance and the detection capacitance will change, so that the excitation force and detection The signal produces nonlinear changes, which increases the difficulty of closed-loop control

Method used

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  • Structure and manufacturing method of beam-island-membrane integrated resonant pressure sensor
  • Structure and manufacturing method of beam-island-membrane integrated resonant pressure sensor
  • Structure and manufacturing method of beam-island-membrane integrated resonant pressure sensor

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Embodiment 2

[0060] Embodiment 2: as Figure 4 As shown, the structure of this embodiment is basically the same as that of Embodiment 1, except that the pressure-sensitive diaphragm 8 and two silicon islands 13 in this embodiment are made of SOI silicon wafer 10 through anisotropic etching solution (potassium hydroxide or tetramethylammonium hydroxide-based etchant), the device layer 103 of the SOI silicon wafer is lightly doped monocrystalline silicon, the resistivity of the substrate layer 101 monocrystalline silicon is less than 0.1Ω.cm, and the doping concentration is less than 70% of the corrosion concentration is stopped.

[0061] In this example, the resonant beam 9 is made of silicon dioxide buried layer 102, device layer 103 monocrystalline silicon and Si 3 N 4 Thin film 5 composition, using Si with tensile stress 3 N 4 The thin film 5 compensates for the compressive stress of the buried silicon dioxide layer 102 .

[0062] The manufacturing process steps of the present embod...

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Abstract

The invention relates to a beam-island-diaphragm integrated resonant pressure sensor structure and a manufacturing method thereof and aims at providing a beam-island-diaphragm integrated resonant pressure sensor structure and a manufacturing method thereof. The beam-island-diaphragm integrated resonant pressure sensor structure comprises a resonant beam, a pressure-sensitive diaphragm and two silicon islands arranged on the pressure-sensitive diaphragm; the resonant beam is arranged between the two silicon islands; and an excitation resistor and a piezoresistor are formed on the resonant beam.The pressure-sensitive diaphragm, the silicon islands, and the resonant beam are formed by corrosion with an anisotropic etching solution of a silicon wafer with the surface (100); the silicon waferis corroded in the anisotropic etching solution to form the pressure-sensitive diaphragm and the silicon islands and the silicon below the resonant beam is corroded from the surface (111) to release the resonant beam along the (110) crystal orientation, so that an integrated beam-island-diaphragm structure is formed. The resistivity of the silicon wafer is less than 0.1omega.cm; and the doping concentration is less than the self-stop corrosion concentration. The beam-island-diaphragm integrated resonant pressure sensor structure and the manufacturing method thereof are suitable for the MEMS field.

Description

technical field [0001] The invention relates to a beam-island-membrane integrated resonant pressure sensor structure and a manufacturing method. Applicable to the field of microelectromechanical systems (MEMS). Background technique [0002] The resonant pressure sensor is a type of sensor based on the change of the resonant frequency of the resonator as the pressure changes. The measured pressure causes the equivalent stiffness of the resonator to change, thereby changing the resonant frequency of the resonator, and the measured pressure is obtained by measuring the change of the resonant frequency. As the core component of the resonant pressure sensor, the resonator works in the state of mechanical resonance, and the output frequency signal is not affected by the circuit noise. The signal-to-noise ratio and resolution are high, and the anti-interference ability is strong. It is easy to connect with the field bus and can save the price. Expensive A / D conversion device redu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/10G01L1/16B81C1/00B81B7/02
CPCB81B7/02B81B2201/0264B81C1/00349B81C1/00539G01L1/106G01L1/162
Inventor 韩建强赵正前朱安赐
Owner CHINA JILIANG UNIV
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