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A kind of wear-resistant delta-tan thin film and its preparation method and application

A thin film, sample technology

Active Publication Date: 2020-06-02
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, widely used metal nitride or carbide ceramic coatings based on TiN, TiC, etc. are used in cutting high-carbon steel and hard alloy, etc., and there is a sticking phenomenon during use, and it is easy to cut at temperatures above 600-700°C. Insufficiency such as failure

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  • A kind of wear-resistant delta-tan thin film and its preparation method and application
  • A kind of wear-resistant delta-tan thin film and its preparation method and application
  • A kind of wear-resistant delta-tan thin film and its preparation method and application

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Experimental program
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Effect test

Embodiment 1

[0045] Place the cleaned WC-Co substrate on the sample stage, the sample stage is passed through cooling water, each sample is located in a concentric circle equiaxially from the center of the sample stage, the distance between the fixed target and the sample surface is 80 mm, and the Ta target is adjusted The power is 130W, the nitrogen / argon flow ratio is fixed at 0.2, that is, the nitrogen gas intake is 10 sccm, the argon gas intake is 50 sccm, and the deposition time is 2 hours. Adjust the working pressure from 0.2Pa to 1.5Pa to obtain TaN films with different orientations. Carry out XRD analysis to the sample, its structure diagram is as follows figure 1 As shown in a, the film has a crystal structure of NaCl crystal form, with a strong (111) preferred orientation; its texture coefficient I (200) / [I (200)+ I (111) ] is 0.26. The samples were analyzed by transmission electron microscopy, figure 2 a is the TEM topography of the cross-section of the δ-TaN film, and th...

Embodiment 2

[0047] Place the cleaned WC-Co substrate on the sample stage, the sample stage is passed through cooling water, each sample is located in a concentric circle equiaxially from the center of the sample stage, the distance between the fixed target and the sample surface is 80mm, and the working pressure is 1Pa, the fixed nitrogen / argon flow ratio is 0.2, that is, the nitrogen gas intake is 10 sccm, the argon gas intake is 50 sccm, and the deposition time is 2 hours. Adjust the carbon target power from 60W to 260W to obtain different Ta / N atomic ratios; when the tantalum target power is 80W, the Ta / N atomic ratio is 0.85; when the tantalum target power is 210W, the Ta / N atomic ratio is 1.12.

Embodiment 3

[0049] Place the cleaned WC-Co substrate on the sample stage, the sample stage is passed through cooling water, each sample is located in a concentric circle equiaxially from the center of the sample stage, the distance between the fixed target and the sample surface is 80 mm, and the Ta target is adjusted The power is 100W, the working pressure is 1Pa, the fixed nitrogen / argon flow ratio is 0.2, that is, the nitrogen gas intake is 10sccm, the argon gas intake is 50sccm, the deposition time is 2.5 hours, and the thickness of the film is about 2.7μm. XRD analysis, its structure diagram is as follows figure 1 As shown in b, the prepared δ-TaN film has a strong (200) preferred orientation, and its texture coefficient I (200) / [I (200)+ I (111) ] is 0.8. The samples were analyzed by transmission electron microscopy, figure 2 b is the dark field image of the δ-TaN film, which shows that the film grows in the form of columnar crystals, and the diameter of the columnar crystals ...

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Abstract

The invention relates to a wear-resistant delta-TaN film, and a preparation method and application thereof, and belongs to the technical field of wear-resistant material design and preparation. A texture coefficient I(200) / [I(200) + I(111)] of the delta-TaN film is 0.2 to 0.8; the crystal structure of the film is delta-TaN of an NaCl crystal form. In the film, an atomic ratio of Ta / N is about 0.72 to 1.33. The preparation method comprises the following steps: using radio frequency reactive magnetron sputtering, using nitrogen and argon as working gases, using a tantalum target as a tantalumsource, and fixing a flow ratio of nitrogen and argon; adjusting a grain texture coefficient of the film by changing working pressure and / or tantalum target power. The application of the resulting filmincludes use as a cutting device, a diffusion impervious layer for electronic packaging, and the like. The invention opens up a new method for controlling the grain texture coefficient of the film; an obtained product is excellent in performance and is convenient for high-precision and large-scale generation and application.

Description

technical field [0001] The invention relates to a wear-resistant δ-TaN thin film and its preparation method and application; it belongs to the technical field of design and preparation of wear-resistant materials. Background technique [0002] At present, the use of coating technology for cutting tools can effectively improve cutting efficiency and reduce processing costs. The base material has high strength and high toughness, while the coating has high hardness and wear resistance. The combination of the two can obtain better comprehensive performance. It not only improves the wear resistance of the tool without losing its toughness. Commonly used coating materials include carbides, oxides, borides, silicides, nitrides, carbonitrides, diamonds, and composite coatings; the most mature and widely used coatings are TiN and TiC coatings. With the development of metal cutting technology, TiN coating is easily oxidized and ablated at 500 °C, and its hardness cannot meet the dem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0036C23C14/0641C23C14/35
Inventor 符立才谭聘周灵平朱家俊杨武霖李德意
Owner HUNAN UNIV
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