A light-controlled neurosynaptic bionic electronic device and its preparation method

A technology of electronic devices and neural synapses, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of non-controllability, slow response, storage continuity, poor stability, etc., to achieve easy control, improve stability, low The effect of power consumption

Active Publication Date: 2020-12-15
SHENZHEN UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a light-controlled neurosynaptic bionic electronic device and its preparation method, thereby solving the problem of poor storage persistence and stability of the existing artificial synapse simulation electronic devices, and poor response speed. slow and uncontrollable problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-controlled neurosynaptic bionic electronic device and its preparation method
  • A light-controlled neurosynaptic bionic electronic device and its preparation method
  • A light-controlled neurosynaptic bionic electronic device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] Based on the above-mentioned light-controlled synaptic bionic electronic device, the present invention also provides a preparation method of a light-controlled synaptic bionic electronic device, wherein, as figure 2 shown, including steps:

[0050] S10, providing a quantum dot solution and a polymer chlorobenzene solution;

[0051] S20, depositing the quantum dot solution on a silicon wafer doped with an oxide layer on the surface to form a quantum dot layer, the material of the quantum dot layer is CsPbCl 3 , CsPbBr 3 and CsPbI 3 one or more of

[0052] S30, depositing the polymer chlorobenzene solution on the surface of the quantum dot layer to form a polymer layer;

[0053] S40, depositing a semiconductor material solution on the surface of the polymer layer to form a semiconductor layer;

[0054] S50. Depositing metal materials on both sides of the surface of the semiconductor layer as source and drain respectively, so as to prepare a bionic electronic device ...

Embodiment 1

[0069] Fully mix cesium carbonate, octadecene and oleic acid in a nitrogen glove box, and heat to 150°C until the reaction is complete to form a cesium oleate solution;

[0070] Then mix lead chloride and octadecene fully and heat to 120°C, inject oleylamine and oleic acid in sequence, heat to 160°C after completely mixing and dissolving, then inject cesium oleate at 100°C, cesium oleate and chloride The molar ratio of lead is 5:1, ice bath after 5 seconds of reaction;

[0071] Using ethanol to make the prepared CsPbCl 3 Quantum dots were precipitated and redispersed in n-hexane solution to obtain inorganic halogen perovskite fluorescent quantum dots CsPbCl 3 solution.

[0072] Spin-coating CsPbCl on Si substrate doped with SiO2 3Quantum dot solution, followed by annealing at 100°C for 1h to form CsPbCl 3 quantum dot layer;

[0073] In CsPbCl 3 spin-coating polymethyl methacrylate solution on the quantum dot layer to form a polymer layer;

[0074] Pentacene organic smal...

Embodiment 2

[0077] Fully mix cesium carbonate, octadecene and oleic acid in a nitrogen glove box, and heat to 150°C until the reaction is complete to form a cesium oleate solution;

[0078] Then mix lead bromide and octadecene fully and heat to 120°C, inject oleylamine and oleic acid in sequence, heat to 160°C after completely mixing and dissolving, then inject cesium oleate at 100°C, cesium oleate and bromide The molar ratio of lead is 6:1, after 5 seconds of reaction, ice bath;

[0079] Using ethanol to make the prepared CsPbBr 3 Quantum dots were precipitated and redispersed in n-hexane solution to obtain inorganic halogen perovskite fluorescent quantum dots CsPbBr 3 solution.

[0080] Spin-coating CsPbBr on Al2O3-doped Si substrates 3 Quantum dot solution, followed by annealing at 120°C for 70min to form CsPbBr 3 quantum dot layer;

[0081] In CsPbBr 3 Spin coating polystyrene (PS) solution on the quantum dot layer to form a polymer layer;

[0082] Pentacene organic small molec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A light-operated nerve synapsis biomimetic electronic device and a preparation method thereof are disclosed, wherein the device comprises a silicon substrate as a gate electrode, an oxide layer, a quantum dot layer, a polymer layer, a semiconductor layer and a metal thin film top electrode are sequentially arranged on the silicon substrate from bottom to top, and the material of the quantum dot layer is one or more of CsPbCl3, CsPbBr3 and CsPbI3. Because of the photoresponsiveness of CsPbX3 quantum dots, the excitatory postsynaptic current enhancement effect in human brain can be simulated bysimply adjusting the light wavelength to change the value of photocurrent in electronic devices, and the suppressive postsynaptic current weakening effect can be realized by combining the reverse electric field stimulation with CsPbX3 quantum dots. Thus, the CsPbX3 quantum dot-based nerve synapsis biomimetic electronic device of the present invention has the advantage of easy regulation, low powerconsumption, high stability, and the like.

Description

technical field [0001] The invention relates to the field of synaptic plastic devices, in particular to a bionic electronic device for light-controlled nerve synapse and a preparation method thereof. Background technique [0002] The von Neumann architecture of traditional computing systems separates the main memory from the central processing unit, so there are inherent limitations in the rate of data communication between the memory and the central computing unit. Such a structure has the so-called "von Neumann bottleneck", which makes it difficult to adapt to the current era of rapid development of information technology with explosive growth of information. Compared with traditional computer systems, the human brain has a large number of synaptic neurons, and all of them can act as memory and computing units, which can realize the processing of a large amount of information, while each synaptic event only consumes about 1-100fJ energy. The pre-neuron propagates along t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/113H01L31/0216H01L31/0352H01L31/18
CPCH01L31/02161H01L31/035218H01L31/1136H01L31/18Y02P70/50
Inventor 王燕韩素婷周晔陈锦锐王展鹏
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap