Self-supporting gallium thin-film with mass thickness of 500-1000[mu]g/cm<2> and preparation method thereof

A technology of mass thickness and supporting gallium, applied in the field of thin film preparation, can solve problems such as affecting the use of self-supporting targets, poor flatness, cracks in Ir deposition layer, etc.

Active Publication Date: 2018-12-25
泰安泰山科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chinese patent CN106868460A, using focused heavy ion sputtering method to prepare a mass thickness of 400 ~ 2000μg / cm 2 Self-supporting Ir target, which solves the technical problems of target film curling and extremely poor flatness in the prior art preparation process
However, due to the large residual stress between the Ir deposition layer and the copper base during the sputtering process, releasing the stress during dissolution and separation will cause cracks in the Ir deposition layer, which will affect the use of the self-supporting target.
In addition, the preparation steps of this invention are complicated. When depositing the Ir deposition layer, two steps are used. It is necessary to take the Ir deposition layer out of the focused heavy ion sputtering deposition system and put it into the deposition system again.

Method used

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  • Self-supporting gallium thin-film with mass thickness of 500-1000[mu]g/cm&lt;2&gt; and preparation method thereof
  • Self-supporting gallium thin-film with mass thickness of 500-1000[mu]g/cm&lt;2&gt; and preparation method thereof
  • Self-supporting gallium thin-film with mass thickness of 500-1000[mu]g/cm&lt;2&gt; and preparation method thereof

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Embodiment 1

[0044] A mass thickness of 600μg / cm 2 The preparation method of self-supporting gallium thin film, comprises the following steps: select the glass of 2cm * 2cm * 0.5cm as substrate 1, adopt electron beam thermal evaporation method to deposit potassium chloride release agent 2, described potassium chloride release agent 2 Thickness 240nm;

[0045] The glass substrate 1 is placed on the workpiece table 9, the magnesium oxide target is used as the 90-degree FCVA cathode 5, and the gallium target is used as the straight tube FCVA cathode 13, and the deposition device is evacuated through the vacuum port 8, so that the inside of the reaction chamber 12 Vacuum degree is 1.2×10 -4 Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.5Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set: the arc starting current is 60A, and the elbow The magnetic field is 2....

Embodiment 2

[0050] A mass thickness of 1000μg / cm 2 The preparation method of the self-supporting gallium thin film comprises the following steps: selecting 2cm×2cm×0.5cm single crystal silicon as the substrate 1, adopting the electron beam thermal evaporation method to deposit the potassium chloride release agent 2, and the potassium chloride release agent The thickness of the agent 2 is 260nm; the monocrystalline silicon substrate 1 is placed on the workpiece table 9, the magnesium oxide target is used as the 90-degree FCVA cathode 5, and the gallium target is used as the straight tube FCVA cathode 13, and the deposition device is pumped through the vacuum port 8. Vacuum, so that the degree of vacuum in the reaction chamber 12 is 1.3 × 10 -4Pa; then argon gas is introduced from the air inlet 11, so that the vacuum degree in the reaction chamber 12 is 1.2Pa; the 90-degree magnetic filter cathodic vacuum arc (FCVA) system is turned on and the deposition parameters are set as follows: the a...

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Abstract

The invention discloses a large-scale self-supporting gallium thin-film and a preparation method thereof. The preparation method comprises the following steps that (1) a potassium chloride release agent is deposited on the surface of a substrate; (2) a magnesium oxide buffer thin-film is deposited on the surface of a substrate by adopting a 90-degree magnetic filtration cathode vacuum arc (FCVA) system; (3) a sample is rotated by 180 degrees, and a gallium thin-film is deposited again by adopting a straight tube magnetic filtration cathode vacuum arc (FCVA) system; (4) the obtained substrate is put into a container filled with ethanol solutions for demoulding treatment; and (5) the gallium thin-film is fished with a fishing plate to obtain a self-supporting gallium thin-film with mass thickness of 500-1000[mu]g/cm<2>. According to the large-scale self-supporting gallium thin-film and the preparation method thereof, the self-supporting gallium thin-film with the mass thickness of 500-1000[mu]g/cm<2>, low stress, uniformity and density is prepared, and process is simple.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a film with a mass thickness of 500-1000 μg / cm 2 Free-standing gallium thin film and its preparation method. Background technique [0002] A self-supporting film, as opposed to a film with a substrate, refers to a film that is not supported by a substrate during use. The commonly used self-supporting film preparation technology is to coat or grow a soluble release agent on a solid polished surface (such as a polished silicon wafer or glass sheet), deposit a film, and then dissolve the release agent. [0003] In addition to being self-supporting, the self-supporting film is also required to have the characteristics of no defect, uniform flatness, purity, large area, and low stress. Chinese patent CN106868460A, using focused heavy ion sputtering method to prepare a mass thickness of 400 ~ 2000μg / cm 2 The self-supporting Ir target solves the technical problems of curling and extre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/18C23C14/02C23C14/58
CPCC23C14/0005C23C14/024C23C14/18C23C14/325C23C14/5873
Inventor 欧志清
Owner 泰安泰山科技有限公司
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