Large-area molecular crystal and preparation method thereof

Abstract

The invention discloses large-area molecular crystal and a preparation method thereof. The preparation method for the large-area molecular crystal comprises the following steps that an organic semiconductor solution is placed on a substrate with a hydrophobic property, a substrate with a hydrophily property covers the substrate with the hydrophobic property, and after growth, molecular crystal canbe obtained on the substrate with the hydrophily property; the organic semiconductor solution adopts at least one of chlorobenzene solvent, trichloromethane solvent, dichlorobenzene solvent and xylene solvent; the mass volume density of the organic semiconductor solution is 0.01 mg / mL-15 mg / mL; the solutes of the organic semiconductor solution are organic semiconductor molecules. The large-area molecular crystal has the advantages of a large area, high uniformity and a flat surface, a field effect transistor prepared by the large-area two-dimensional molecular crystal has higher carrier mobility rate and lower threshold voltage, and solid foundation is laid for the preparation of later P-N heterojunction.

Description

technical field [0001] The invention relates to a large-area molecular crystal and a preparation method thereof, belonging to the technical field of organic semiconductor materials. Background technique [0002] Since the emergence of graphene, two-dimensional atomic crystals have attracted extensive attention. Most of the current research focuses on inorganic materials such as boron nitride and transition metal chalcogenides. However, due to the difficulty of preparation, there are relatively few studies on organic two-dimensional semiconductors. It is well known that large-area two-dimensional molecular crystals (2DMC) can construct high-performance transistors, which are expected to exceed the mobility of self-assembled monolayers bonded to substrates, which are generally lower than 0.05 cm 2 V -1 the s -1 . Large-area 2D transistors can reduce the bulk resistance and reduce the exposure of the semiconductor charge accumulation layer. This low defect density provides ...

AI Technical Summary

Problems solved by technology

Most of today's research focuses on inorganic materials such as boron nitride and transition metal chalcogenides. However, due to the difficulty of preparation, there are relatively few studies on organic two-dimensional semiconductors.

Images