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A millimeter-wave predistortion integrated circuit based on a pin diode and its manufacturing method

A PIN diode and integrated circuit technology, applied in the field of millimeter wave predistortion integrated circuits and production, can solve the problems of high cost of ultra-linear devices, difficulty in large-scale integration, difficulty in exerting the best effect, etc., and achieve the goal of penetrating plasma Strong ability, reduce the difficulty of large-scale integration, and the effect of large saturation current

Active Publication Date: 2020-07-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the cost of selecting ultra-linear devices that meet system performance requirements is too high and the technology is difficult; and the use of power back-off method will not only greatly reduce the utilization rate of the power supply, but also has complex structure, low linearity compensation, poor adjustability, large Large-scale integration is difficult, and at the same time, the power back-off method can only be effectively carried out in low-frequency and narrow-band signals, and it is difficult to exert the best effect in high-frequency and broadband environments

Method used

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  • A millimeter-wave predistortion integrated circuit based on a pin diode and its manufacturing method
  • A millimeter-wave predistortion integrated circuit based on a pin diode and its manufacturing method
  • A millimeter-wave predistortion integrated circuit based on a pin diode and its manufacturing method

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Embodiment 1

[0058] See figure 1 , figure 1 The flow chart of the manufacturing method of the millimeter-wave predistortion integrated circuit based on the PIN diode provided by the embodiment of the present invention, the AlGaN / GaN high electron mobility transistor includes the first substrate layer 101, the nucleation layer 102, the GaN buffer layer 103 and the AlGaN Fabricated on a sample of the barrier layer 104, see Figure 2a , wherein a two-dimensional electron gas (Two dimensional electrons, 2DEG) exists between the buffer layer 103 and the barrier layer 104 . First, clean the sample. The cleaning steps are as follows: place the sample in acetone for 2 minutes, and then boil it in a positive glue stripping solution heated in a water bath at 60°C for 10 minutes. After cleaning the remaining acetone and ethanol with deionized water, the sample was cleaned with HF solution for 30 seconds, and finally cleaned with deionized water and dried with ultra-pure nitrogen.

[0059] After clea...

Embodiment 2

[0112] See Figure 3a-Figure 3g , Figure 3a-Figure 3g It is a schematic diagram of the manufacturing method of the PIN diode provided by the embodiment of the present invention.

[0113] According to the measured input impedance of the AlGaN / GaN HEMT device, the output impedance of the PIN diode is Z d = r 1 +jxΩ, the junction capacitance of the PIN diode can be calculated from the output impedance. From the junction capacitance, it is known that the size of the PIN diode and the GaN doping concentration affect its size, thereby controlling the output impedance of the PIN diode. Therefore, by controlling the size of the PIN diode and Doping concentration to make PIN diodes.

[0114] PIN diodes are fabricated on a second substrate layer 201 of definite size, see Figure 3a . The specific production steps are as follows:

[0115] S201, epitaxially N+ layer material, I layer material and P+ layer material on the second substrate layer 201, and sequentially form N+ layer 20...

Embodiment 3

[0141] In the embodiment of the present invention, the AlGaN / GaN HEMT and the PIN diode are bonded and assembled through a bonding material to form a predistortion integrated circuit, and the steps are as follows:

[0142] S301. Pretreat the AlGaN / GaN high electron mobility transistor.

[0143] Treat the surface of AlGaN / GaN HEMT devices, through AP3000 treatment liquid and baking, to enhance adhesion;

[0144] S302. Spin-coat a bonding material on the surface of the AlGaN / GaN high electron mobility transistor to form a bonding layer.

[0145] Preferably, the bonding material includes benzocyclobutene (BCB).

[0146] S303, exposing and developing the bonding layer to form a bonding pattern.

[0147] S3031. Set the exposure and development conditions according to the corresponding film thickness, expose the HEMT device spin-coated with BCB material, the photolithographic layout has bonding alignment marks, form a bonding pattern after development, and place the wafer on the h...

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Abstract

The invention relates to a manufacturing method of a millimeter wave predistortion integrated circuit based on a PIN diode, comprising the steps of: preparing an AlGaN / GaN high electron mobility transistor, and testing and obtaining the input impedance of the AlGaN / GaN high electron mobility transistor; Preparing a PIN diode such that an output impedance of the PIN diode is conjugately matched with the input impedance; A predistortion integrated circuit is obtained by bonding the AlGaN / GaN high electron mobility transistor and the PIN diode. The predistortion integrated circuit of the embodiment of the invention can exert the best effect in low frequency, narrow band environment, high frequency and wide band environment. At the same time, the predistortion integrated circuit can reduce theamplitude of GaN-based power amplifier and improve the nonlinear distortion of power amplifier.

Description

technical field [0001] The invention belongs to the field of radio frequency technology, and in particular relates to a millimeter-wave predistortion integrated circuit based on a PIN diode and a manufacturing method thereof. Background technique [0002] With the rapid development of wireless communication technology, linear modulation technology is being used more and more widely. Modulation signals with varying envelopes will produce intermodulation components after passing through nonlinear RF power amplifiers, so linearization techniques must be used to reduce the resulting adjacent channel interference. [0003] Pre-distortion technology is a widely used linearization technology. The linearization system based on pre-distortion technology is gradually becoming a research hotspot. At present, the linearization methods based on pre-distortion technology mainly use super-linear devices and power back-off methods. Both the ultra-linear device required by the system perfor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L21/56H01L29/778H01L29/868
CPCH01L21/561H01L25/071H01L29/778H01L29/868
Inventor 马晓华杨凌芦浩祝杰杰周小伟侯斌宓珉翰郝跃
Owner XIDIAN UNIV
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