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A kind of scandium-containing cathode on the top layer of submicron structure and preparation method thereof

A submicron and cathode technology, which is applied in the manufacture of cold cathodes, thermionic cathodes, and electrode systems, can solve the problems of uneven diffusion and distribution of scandium and its oxides, shorten the preparation time, etc., and achieve high emission performance, emission good uniformity

Active Publication Date: 2020-11-27
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a scandium-containing cathode in the top layer of a submicron structure and a preparation method thereof, the purpose of which is to structurally improve the problem of uneven diffusion and distribution of scandium and its oxides in the cathode from the inside to the surface, thereby improving the emission uniformity of the cathode, and at the same time It also reduces the preparation cost and shortens the preparation time

Method used

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  • A kind of scandium-containing cathode on the top layer of submicron structure and preparation method thereof
  • A kind of scandium-containing cathode on the top layer of submicron structure and preparation method thereof
  • A kind of scandium-containing cathode on the top layer of submicron structure and preparation method thereof

Examples

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Effect test

Embodiment 1

[0026] Example 1 Dissolve 127.1g of ammonium metatungstate, 16.8g of scandium nitrate, and 143.9g of citric acid in deionized water, mix well after stirring, put the mixed solution into a water bath and heat to obtain a light yellow xerogel. The dried gel was put into a drying cabinet, dried at 120°C for 24h, ground and placed in a SX1000 muffle furnace, heated to 600°C for 2h for calcination. The calcined powder was placed in a tubular hydrogen reduction furnace, heated to 600°C in a hydrogen atmosphere, kept at 950°C for 1 hour, and kept at 1 hour to obtain scandium oxide-doped tungsten powder. Afterwards, the process of pressing and microwave sintering is carried out, and the sintering temperature is 1450°C. Then press and sinter the tungsten powder, keep the pressure at 0.55MPa for 20s, keep the sintering temperature at 1480°C for 20min, then impregnate 411 barium aluminate calcium salt, the impregnation temperature is 1675°C, the impregnation amount is 6-7%, and the tempe...

Embodiment 2

[0027] Example 2 Dissolve 129.7g of ammonium metatungstate, 10.1g of scandium nitrate, and 139.8g of citric acid in deionized water respectively, stir thoroughly and mix, put the mixed solution into a water bath and heat to obtain a light yellow xerogel. The dried gel was put into a drying cabinet, dried at 120°C for 24h, ground and placed in a SX1000 muffle furnace, heated to 600°C for 2h for calcination. The calcined powder was placed in a tubular hydrogen reduction furnace, heated to 600°C in a hydrogen atmosphere, kept at 950°C for 1 hour, and kept at 1 hour to obtain scandium oxide-doped tungsten powder. Afterwards, the process of pressing and microwave sintering is carried out, and the sintering temperature is 1450°C. Then press and sinter the tungsten powder, keep the pressure at 0.55MPa for 20s, keep the sintering temperature at 1480°C for 20min, then impregnate 411 barium aluminate calcium salt, the impregnation temperature is 1675°C, the impregnation amount is 6-7%, ...

Embodiment 3

[0028] Example 3 Dissolve 132.4g of ammonium metatungstate, 3.35g of scandium nitrate, and 135.8g of citric acid in deionized water respectively, mix them after fully stirring, put the mixed solution into a water bath and heat to obtain a light yellow xerogel, The dried gel was put into a drying cabinet, dried at 120°C for 24h, ground and placed in a SX1000 muffle furnace, heated to 600°C for 2h for calcination. The calcined powder was placed in a tubular hydrogen reduction furnace, heated to 600°C in a hydrogen atmosphere, kept at 950°C for 1 hour, and kept at 1 hour to obtain scandium oxide-doped tungsten powder. Afterwards, the process of pressing and microwave sintering is carried out, and the sintering temperature is 1450°C. Then press and sinter the tungsten powder, keep the pressure at 0.55MPa for 20s, keep the sintering temperature at 1480°C for 20min, then impregnate 411 barium aluminate calcium salt, the impregnation temperature is 1675°C, the impregnation amount is ...

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Abstract

A submicron-structured top-layer scandium-containing cathode and a preparation method thereof belong to the technical field of rare earth refractory metal hot cathode materials. The method comprises preparing submicron-order scandium-oxide-doped refractory metal powder by using a sol-gel hydrogen reduction method; obtaining a submicron-structured top-layer scandium-containing refractory metallic substrate by compressed microwave sintering; subjecting the refractory metal powder to compressed sintering to obtain a refractory metal cathode substrate; impregnating the cathode substrate with a cathode emitting active salt and annealing the cathode substrate to obtain a substrate refractory metal cathode; and finally preparing a submicron-structured top-layer scandium-containing cathode by means of welding such as laser welding, brazing or the like. The submicron-structured top-layer scandium-containing cathode prepared by the invention has large emission current density and good emission uniformity, and has the maximum emission current density as high as 100 A / cm2 and an emission slope over 1.41 at a working temperature of 950 degrees centigrade after fully activated.

Description

technical field [0001] The invention belongs to the technical field of rare earth refractory metal hot cathode materials, relates to the field of electric vacuum components, and more specifically relates to a scandium-containing cathode in the top layer of a submicron structure and a preparation method thereof. Background technique [0002] As a vacuum electron emission source, hot cathode electron emitter occupies an irreplaceable important position in the field of electric vacuum components. It is widely used in military, medical and other fields, and is used in microwave tubes in advanced electronic weapons and high-resolution vacuum displays. The device requires the cathode to have high emission current density and low operating temperature, and also requires the cathode to be able to withstand harsh environments and ion bombardment and have a life span of tens of thousands of hours. In addition, the stability and reliability of the cathode process is also very important...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/144H01J1/146H01J1/16H01J9/04B22F3/11
CPCB22F3/11H01J1/144H01J1/146H01J1/16H01J9/045
Inventor 刘伟吴浩王金淑周帆杨韵斐李俊辉潘兆柳骆凯捷梁轩铭
Owner BEIJING UNIV OF TECH
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