Synthesis device and synthesis method for NbSe2 monocrystal layered nanosheet

A synthesis device and synthesis method technology, applied in the direction of single crystal growth, single crystal growth, nanotechnology, etc., can solve the problems of low yield of nanosheets, cumbersome process, equipment damage, etc., and achieve simple preparation method, good repeatability, The effect of improving productivity efficiency

Active Publication Date: 2019-03-08
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Currently preparing NbSe 2 The most popular method for nanosheets is to synthesize NbSe using Se powder source and Nb powder source 2 Single crystal bulk material, and then obtain nanosheets by mechanical exfoliation, because Se and Nb will also synthesize niobium triselenide NbSe at high temperature 3 And Nb simple substance and synthesized NbSe 2 It is very easy to be oxidized, which leads to the use of solution method, intermediate reaction of halogen carrier gas and even organic reaction. However, such methods reported so far are the same as the most popular methods, and cannot directly obtain NbSe 2 Nanosheets usually obtain a variety of intermediate states or use a variety of methods during the preparation process, and the process is relatively cumbersome; most of the other methods using iodine carrier gas need to pass the carrier gas to control the air flow during the preparation process, but due to the high purity iodine It is very corrosive and often corrodes equipment connection ports and other locations, resulting in equipment damage
[0006] The NbSe obtained by the existing preparation method 2 The yield of nanosheets is generally low, and even high-quality nanosheets obtained through complex processes still need to be screened one by one

Method used

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  • Synthesis device and synthesis method for NbSe2 monocrystal layered nanosheet
  • Synthesis device and synthesis method for NbSe2 monocrystal layered nanosheet
  • Synthesis device and synthesis method for NbSe2 monocrystal layered nanosheet

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Embodiment 1

[0034] The NbSe of this embodiment 2 The synthetic method of single-crystal layered nanosheet, comprises the following steps:

[0035] 1) Place 2.261g iodine source on the carrier gas source slide, 0.015gNbSe 2 The powder source is placed on the reactant carrier near the end of the carrier gas source carrier, and 8 silicon wafer deposition substrates are placed on the other end of the reactant carrier far away from the carrier gas source carrier. The side length of the silicon wafer deposition substrate is 5mm, arranged in order with the spacing between adjacent deposition substrates as 4mm, the distance between the silicon wafer deposition substrates and NbSe 2 The closest distance to the powder source is 16.1cm;

[0036] 2) Place the carrier gas source slide and the reactant slide in the sealed reactor along the length direction, the centerlines of the two are on the same straight line, the iodine source and the NbSe 2 The distance between the powder sources is 20cm, and ...

Embodiment 2

[0042] The NbSe of this embodiment 2 The synthetic method of single-crystal layered nanosheet, comprises the following steps:

[0043] 1) Place 3.227g iodine source on the carrier gas source slide, 0.024g NbSe 2 The powder source is placed on the reactant carrier near the end of the carrier gas source carrier, and 8 silicon wafer deposition substrates are placed on the other end of the reactant carrier far away from the carrier gas source carrier. The side length of the silicon wafer deposition substrate is 5mm, arranged in order with the spacing between adjacent deposition substrates as 4mm, the distance between the silicon wafer deposition substrates and NbSe 2 The closest distance to the powder source is 16cm;

[0044] 2) Place the carrier gas source slide and the reactant slide in the sealed reactor along the length direction, the centerlines of the two are on the same straight line, the iodine source and the NbSe 2 The distance between the powder sources is 20.4cm, and...

Embodiment 3

[0050] The NbSe of this embodiment 2 The synthetic method of single-crystal layered nanosheet, comprises the following steps:

[0051] 1) Place 3.183g iodine source on the carrier gas source slide, 0.022g NbSe 2 The powder source is placed on the reactant carrier near the end of the carrier gas source carrier, and the six silicon wafer deposition substrates are placed on the reactant carrier at the other end away from the carrier gas source carrier. The side length of the silicon wafer deposition substrate is 5mm, arranged in order with the spacing between adjacent deposition substrates as 6mm, the distance between the silicon wafer deposition substrates and NbSe 2 The closest distance to the powder source is 16.8cm;

[0052] 2) Place the carrier gas source slide and the reactant slide in the sealed reactor along the length direction, the centerlines of the two are on the same straight line, the iodine source and the NbSe 2 The distance between the powder sources is 19.8cm,...

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Abstract

The invention discloses a synthesis device and a synthesis method for an NbSe2 monocrystal layered nanosheet. Carrier gas is used for controlling airflow, the atmosphere of a growth environment is accurately controlled, the pure NbSe2 monocrystal layered nanosheet can still be synthesized even if a carrier gas source participates in reaction in a gaseous phase conveying process; in a whole process, only a sealed quartz tube needs to be used to grow in a horizontal tube furnace, time and economic cost are greatly lowered, and a preparation method is simple; characterization results are good, practical samples can be taken and used at will, and the yield efficiency is improved by multiple orders of magnitude; control factors mainly depend on growth time and temperature, a space between a source and a deposition substrate, the shape structure of slide glass, annealing time and the like, parameters can be easily controlled, and the repeatability is good. According to the method disclosed by the invention, a great quantity of NbSe2 monocrystal layered nanosheets can be prepared, after dosage concentration is controlled through a further condition, a new scheme is provide for the growthof the NbSe2 nanosheets and other all transition metal disulfide compound nanostructures, and the synthesis device and the synthesis method have an important reference meaning.

Description

technical field [0001] The invention relates to the field of preparation of inorganic nanomaterials, in particular to a niobium diselenide NbSe 2 Synthesis device and synthesis method of single crystal layered nanosheets. Background technique [0002] Superconductivity occurs in sample materials when conduction electrons form Cooper pairs and condense into macroscopically phase-coherent quantum states. Compared with traditional superconducting characteristics, superconducting systems with dimensions smaller than the phase coherence length exhibit different behaviors from bulk superconducting, for example, thermal fluctuations or macroscopic quantum tunneling in one-dimensional superconducting systems will cause quantum phase slip Shift, the superconducting insulation phase transition (SIT) under the modulation of external magnetic field, charge density and impurity doping can be observed in the two-dimensional superconducting thin film, which provides a model for the study ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B29/64C30B25/16B82Y40/00
CPCB82Y40/00C30B25/165C30B29/46C30B29/64
Inventor 向鹏展廖志敏秦茂森
Owner PEKING UNIV
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