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BGSFMC/CNFO multiferroic composite film and preparation method thereof

A composite thin film and multiferroic technology, applied in coatings and other directions, can solve the problems of deterioration of ferroelectric properties, difficulty in obtaining multiferroic properties, and magnetoelectric coupling effects, etc., to achieve easy control of doping amount, simple equipment requirements, and experimental The effect of easy conditions

Active Publication Date: 2019-03-15
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although BiFeO 3 The magnetic properties of thin films have been significantly improved, but their ferroelectric properties tend to deteriorate with the introduction of magnetic materials, and it is difficult to obtain good multiferroic properties and magnetoelectric coupling effects

Method used

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  • BGSFMC/CNFO multiferroic composite film and preparation method thereof
  • BGSFMC/CNFO multiferroic composite film and preparation method thereof
  • BGSFMC/CNFO multiferroic composite film and preparation method thereof

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preparation example Construction

[0035] The preparation method of described BGSFMC / CNFO multiferroic composite thin film comprises the following steps:

[0036] Step 1: Dissolve cobalt nitrate and nickel nitrate in ethylene glycol methyl ether in a molar ratio of (1-x):x, add acetic anhydride after stirring evenly, and continue stirring evenly to obtain the bottom film precursor solution; wherein x=0.10 ~0.50;

[0037] Step 2: Spin-coat the bottom layer film precursor solution on the FTO / glass substrate to obtain a wet film. After the wet film is evenly glued, it is baked at 190-195°C to obtain a dry film, and then annealed in air at 660-710°C , to obtain crystalline Co 1-x Ni x Fe 2 o 4 film;

[0038] Step 3: The crystalline Co 1-x Ni x Fe 2 o 4 The film was cooled to room temperature, and step 2 was repeated until the desired thickness was obtained, that is, the underlying film Co 1-x Ni x Fe 2 o 4 film.

[0039] Step 4: Dissolve bismuth nitrate, strontium nitrate, gadolinium nitrate, iron nit...

Embodiment 1

[0051] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0052] Step 2: Cobalt nitrate and nickel nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.9:0.1 (x=0.10), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes, and the total concentration of metal ions is 0.2 mol / L stable bottom film precursor; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0053] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and the coating speed is 4000r / min, the homogenization time is 15s to obtain a ...

Embodiment 2

[0058]Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0059] Step 2: Cobalt nitrate and nickel nitrate are used as raw materials, dissolved in ethylene glycol methyl ether at a molar ratio of 0.7:0.3 (x=0.30), stirred for 30 minutes, then added with acetic anhydride, stirred for 90 minutes, and the total concentration of metal ions is 0.2 mol / L stable bottom film precursor; wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0060] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and the coating speed is 4000r / min, the homogenization time is 15s to obtain a w...

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Abstract

The invention provides a BGSFMC / CNFO multiferroic composite film and a preparation method thereof. The BGSFMC / CNFO multiferroic composite film comprises an upper film and a bottom film which are composited together; the upper film has a chemical formula of Bi0.88Gd0.09Sr0.03Fe0.94Mn0.04Co0.02O3, is of a polycrystalline distorted perovskite structure and has a space group of R3c; and the bottom film has a chemical formula of Co1-XNixFe2O4, is of a cubic inverse spinel structure and has a space group of Fd3m, wherein x ranges from 0.1 to 0.5. The upper film and the bottom film comprise a Co element, the Co diffusion is inhibited, Gd, Sr and Mn elements diffuse to the bottom film, the structure of the BGSFMC film is distorted, and the antiferromagnetic (AFM) / ferromagnetic (FM) junction is enhanced, so that the ferromagnetic properties are improved; and the Ni element diffuses to the upper BGSFMC film, and the antiferromagnetic / ferroelectric junction is enhanced, so that the ferroelectricproperties are improved.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a BGSFMC / CNFO multiferroic composite film and a preparation method thereof. Background technique [0002] Due to the single-phase multiferroic material BiFeO 3 It has magnetoelectric coupling properties at room temperature, so that BiFeO 3 become a research hotspot in recent years. But BiFeO at room temperature 3 There is a large leakage conductance in , so that its ferroelectricity cannot obtain saturation polarization, and because of its special helical magnetic structure, it shows weak ferromagnetism to the outside, which has become an obstacle in its practical application. Therefore, the current research on BiFeO 3 The focus of the material is how to reduce the BiFeO 3 Leakage conduction, enhance its ferroelectricity, improve its ferromagnetism and increase its magnetoelectric coupling effect. For ion doping, the replacement of Bi sites and Fe sites by rare earth eleme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2218/116
Inventor 谈国强李金成柴正军党明月任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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