High-adhesion low-dielectric polyamide film and preparation method thereof

A technology of polyimide film and low dielectric, which is applied in the field of high adhesion and low dielectric polyimide film and its preparation, can solve the problems of polyimide film adhesion reduction, polyimide film mechanics Reduced performance, weakened adhesion of the upper layer material or the lower layer substrate, etc., to achieve the effect of reducing the dielectric constant, improving the bonding performance, and improving the dispersion

Inactive Publication Date: 2019-04-16
WUXI CHUANGCAI OPTICAL MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dielectric constant of polyimide is usually above 3.0, which is far from meeting the development needs of the microelectronics industry. Therefore, reducing the dielectric constant is one of the key directions in the field of polyimide research.
[0004] On the other hand, in order to reduce the dielectric constant of polyimide, people have carried out a large amount of modification work to it, the most common is to introduce fluorine-containing substituent in polyimide molecular skeleton, for example Chinese patent CN107286650A, however The introduction of fluorine-containing substituents in polyimide significantly reduces the dielectric constant of polyimide, but due to the introduction of fluorine-containing groups, the hydrophilicity of the polyimide film is reduced and the surface is too smooth. Reduced adhesion of polyimide film
In addition, in the Chinese patent CN107540836A, the dielectric constant is also reduced by doping inorganic low-dielectric material carbon nanotubes into the polyimide film. However, adding carbon-based fillers will greatly affect the physical properties of the polymer film. Especially insulating properties
In addition, the Chinese patent CN107540836A introduces voids into the polyimide material to make a porous polyimide material to reduce the dielectric constant, but this method will cause the mechanical properties of the polyimide film to decrease, which is different from the upper material or the lower layer. The adhesion of the substrate is weakened

Method used

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  • High-adhesion low-dielectric polyamide film and preparation method thereof
  • High-adhesion low-dielectric polyamide film and preparation method thereof
  • High-adhesion low-dielectric polyamide film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Dissolve 1.09g of silica (particle size: 200-300nm) uniformly in 4.36g of DMAc (N,N-dimethylacetamide) to prepare 5.45g of silica sol (20wt%, DMAc) and add it to 1L In the reaction kettle, add 650g of DMAc and 1.359g of heptafluoropentyltriethoxysilane into the reaction kettle, start stirring, heat to 100°C, react for 2h, stop heating, drop to room temperature, add 76.97g (0.3844mol) 4, 4'-diaminodiphenyl ether (ODA), after dissolving and clarifying, add 83.85g (0.3844mol) pyromellitic dianhydride (PMDA), control the reaction temperature at 30°C, and react for 2h to obtain polyamic acid The solution has a solid content of 20% and a viscosity of 210000cps (30°C).

[0031] The prepared polyimide acid solution was coated on a glass (40*20cm) substrate, dried at 180°C for 20 minutes, then gradually heated to 380°C within 30 minutes, dried for 30 minutes, and cooled to obtain a 25 μm film.

Embodiment 2

[0033] Dissolve 1.6g of silica (particle size: 200-300nm) uniformly in 6.4g of DMAc (N,N-dimethylacetamide) to prepare 8g of silica sol (20wt%, DMAc) and add it to 1L of reaction In the kettle, add 632g DMAc and 2g heptafluoropentyltriethoxysilane into the reaction kettle, start stirring, heat to 100°C, react for 2h, stop heating, drop to room temperature, add 76.97g (0.3844mol) 4,4 '-Diaminodiphenyl ether (ODA), after dissolving and clarifying, add 83.85g (0.3844mol) pyromellitic dianhydride (PMDA), control the reaction temperature at 30°C, and react for 2h to prepare a polyamic acid solution , its solid content is 25.7%, viscosity 220000cps (30 ℃).

[0034] The prepared polyimide acid solution was coated on a glass (40*20cm) substrate, dried at 180°C for 20 minutes, then gradually heated to 380°C within 30 minutes, dried for 30 minutes, and cooled to obtain a 25 μm film.

Embodiment 3

[0036] Dissolve 1.714g of silica (particle size: 200-300nm) uniformly in 6.856g of DMAc (N,N-dimethylacetamide) to prepare 8.57g of silica sol (20wt%, DMAc) and add it to 1L In the reaction kettle, add 650g DMAc and 1.886g heptafluoropentyltriethoxysilane into the reaction kettle, start stirring, heat to 100°C, react for 2h, stop heating, lower to room temperature, add 76.97g (0.3844mol) 4 , 4'-diaminodiphenyl ether (ODA), after dissolving and clarifying, add 83.85g (0.3844mol) pyromellitic dianhydride (PMDA), control the reaction temperature at 30°C, and react for 2h to obtain polyamide Acid solution with a solid content of 20% and a viscosity of 220,000 cps (30°C).

[0037]The prepared polyimide acid solution was coated on a glass (40*20cm) substrate, dried at 180°C for 20 minutes, then gradually heated to 380°C within 30 minutes, dried for 30 minutes, and cooled to obtain a 25 μm film.

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Abstract

The invention relates to a low-adhesion low-dielectric polyamide film and a preparation method thereof. The low-adhesion low-dielectric polyamide film is characterized by being prepared from, by weight, 1.5-2.5% of fluorinated siloxane grafted modification silicon dioxide pellets, wherein the structural formula of the fluorinated siloxane is shown in the specification, X is any one of Cl or methoxyl, ethyoxyl or alkyl with the carbon number being 1-10; R is fluorine-containing alkyl with the carbon number being 1-20. The obtained polyamide film has the high adhesion strength and low dielectricconstant and is suitable for the field of micro-electronics and aerospace.

Description

technical field [0001] The invention relates to the field of polymer materials, in particular to a high-adhesion and low-dielectric polyimide film and a preparation method thereof. Background technique [0002] Polyimide (PI) is often used as an insulating dielectric layer in the middle of large-scale integrated circuits in the field of electronics industry because of its unique mechanical properties, high temperature resistance, insulation properties, and solvent resistance. It is used as a shielding protective layer for integrated circuits to reduce damage and errors from environmental rays, and is also used as a dielectric layer for flexible printed circuit boards, liquid crystal display alignment films, and photolithographic wiring processing. [0003] With the rapid development of miniaturization and high integration of VLSI, etc., the delay time of signal transmission between devices and wires increases, and the delay time is proportional to the dielectric constant of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/08C08K9/10C08K7/18C08G73/10C08J5/18
CPCC08G73/1007C08G73/1071C08J5/18C08J2379/08C08K7/18C08K9/10
Inventor 周浪陈久军赵子刚
Owner WUXI CHUANGCAI OPTICAL MATERIALS
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