A substrate etching method for GAAS-based LED wafers

Abstract

A substrate etching method for a GaAs-based LED wafer, comprising the following manufacturing steps: (1) GaAs substrate corrosion; (2) water washing; (3) barrier layer removal; (4) water washing; (5) drying. The present invention quickly completes the corrosion of the underlying gallium arsenide through the appropriate ratio of ammonia water and hydrogen peroxide solution and the appropriate angle adjustment, and then uses the appropriate proportion of dilute hydrochloric acid solution to complete the corrosion of the barrier layer through the cooperation of appropriate time. The whole process is fast and effective , which not only completes the uniform and effective corrosion of the substrate, but also does not affect other structures. The method of the invention has high manufacturing efficiency and low cost in the whole process, shortens the manufacturing process time, reduces the contamination on the wafer surface, and improves the yield rate of the entire wafer. The method of the invention is suitable for substrate etching of all GaAs-based LED wafers.

Description

technical field [0001] The invention relates to a method for corroding a GaAs-based light-emitting diode wafer substrate, which belongs to the technical field of semiconductor device processing. Background technique [0002] Semiconductor light-emitting diodes are widely used in communication, information processing and lighting because of their simple structure, stable performance, small size, low operating current, convenient use, low cost, energy saving and environmental protection, and long service life. Especially in industries such as display screens, traffic lights, automotive lights, LCD screen backlights, lighting decorations, and lighting sources, it is used more and more, bringing many conveniences to people's life and study. [0003] For the production of LED chips, the selection of substrate materials is the primary consideration. Which kind of suitable substrate should be used needs to be selected according to the requirements of equipment and LED devices. Th...

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Problems solved by technology

Deficiencies of sapphire: 1. Lattice mismatch and thermal stress mismatch will generate a large number of defects in the epitaxial layer; 2. Sapphire is an insulator, and two electrodes are made on the upper surface, resulting in a reduction in effective light-emitting area; 3. The process of photolithography and etching is increased, and the production cost is high

Insufficient: The cost of silicon carbide manufacturing is relatively high, and the corresponding cost needs to be reduced to realize its commercialization

[0009] When corroding the substrate, if the corrosion rate or corrosion time of the corrosion solution is not properly controlled, it is easy to see the penetration corrosion phenomenon of the adhesion layer, P-type electrode layer, barrier layer and other metal film layers, among which the adhesion layer is the most obvious. When over-corrosion occurs again, the entire replacement substrate is easy to fall off

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