A light detection device and light detection device
A light detection and device technology, applied in the field of optical devices, can solve the problem of low photoelectric conversion rate
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Embodiment 1
[0050] The TFT image sensing array thin film (that is, the light detecting device) is an array formed by photosensitive diodes, and the array formed by the photosensitive diodes includes a photosensitive diode sensing area. Existing liquid crystal display (LCD) panels or organic light-emitting diode (OLED) display panels all use a TFT structure to drive and scan a single pixel to realize the display function of the pixel array on the panel. The main structure forming the TFT switching function is a semiconductor field effect transistor (FET). The well-known semiconductor layer materials mainly include amorphous silicon, polycrystalline silicon, indium gallium zinc oxide (IGZO), or organic compounds mixed with carbon nanomaterials, etc. . Since the structure of the light-sensing diodes can also be prepared using such semiconductor materials, and the production equipment is also compatible with the production equipment of TFT arrays, TFT light-sensing diodes (ie, photodiodes) ha...
Embodiment 2
[0056] On the basis of using the first embodiment, in order to improve the quantum efficiency of photoelectric conversion, the amorphous silicon photodiode can also be formed by stacking p-type / i-type / n-type structures above double junctions. The p-type / i-type / n-type material of the first junction layer of the photodiode is still an amorphous silicon structure, and the p-type / i-type / n-type material above the second junction layer can be a microcrystalline structure, a polycrystalline structure or doped with Compound materials that can extend the photosensitive wavelength range. In short, multiple sets of p-type / i-type / n-type structures can be stacked up and down to form a photodiode structure, and for each p-type / i-type / n-type structure, the photodiode structure described in Embodiment 1 is used .
Embodiment 3
[0058] On the basis of using Embodiment 1 or Embodiment 2, for each p-type / i-type / n-type structure, the p-type semiconductor layer contained therein may be a multi-layer structure with more than two layers. For example, the p-type semiconductor layer has a three-layer structure, including a first p-type semiconductor layer (p1 layer), a second p-type semiconductor layer (p2 layer), and a third p-type semiconductor layer (p3 layer) from top to bottom. Among them, the p1 layer can adopt an amorphous structure and be heavily doped with boron (the concentration of boron is more than twice that of the standard process); The thinned p2 and p3 layers reduce the absorption of light, so that as much light as possible enters the i layer and is absorbed by the i layer, improving the photoelectric conversion rate; on the other hand, the p2 layer and p3 layer use normal boron doping It can effectively avoid the deterioration of the built-in potential due to the heavy doping of the p1 layer...
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Abstract
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