Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vacuum channel transistor and preparation method thereof

A transistor and channel technology, used in the field of vacuum channel transistors and their preparation, can solve the problems of low emission current density, difficult to improve, slow response speed, etc., and achieve high limit operating frequency, high thermal stability, and high switching ratio. Effect

Inactive Publication Date: 2019-05-24
NO 12 RES INST OF CETC
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, due to its structure and working principle, the development of solid-state transistors in the prior art will be limited in power and frequency, and the carrier mobility and carrier mean free path are low, which is difficult to improve; while the vacuum channel The modulation method and switching ratio of the transistor are single, which is not conducive to control
In addition, the existing vacuum channel transistors still have problems such as slow response speed and low emission current density. They are only used in vacuum devices working with weak currents, and cannot meet the requirements of high-power vacuum devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum channel transistor and preparation method thereof
  • Vacuum channel transistor and preparation method thereof
  • Vacuum channel transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] According to another aspect of the present invention, there is provided a method for preparing a photocathode vacuum channel transistor, comprising the following steps:

[0045] S1 uses organic solvents, acidic solutions and deionized water to clean the organic matter and oxides and other pollutants on the surface of the anode material;

[0046] S2 making a first insulating layer on the surface of the anode material obtained in the first step;

[0047] S3 making a gate conductive layer on the surface of the first insulating layer of the structure obtained in the second step;

[0048] S4 making a second insulating layer on the surface of the gate conductive layer of the structure obtained in the third step;

[0049] S5 using photolithography or ion beam focused etching technology to make a vacuum channel in the multilayer film material obtained in the fourth step;

[0050] S6 purifies and activates the first electrode;

[0051] In S7, the side of the structure obtaine...

example 1

[0054] The vacuum channel transistor based on GaAs photocathode and its preparation method are as follows:

[0055] The anode material is selected as a single crystal silicon material with a thickness of 0.52mm; both insulating layers are SiO 2 material, the thickness is 5 μm; the gate layer is Si material, the thickness is 4 μm; the photocathode is GaAs photocathode, the cathode material thickness is 3 μm, the supporting substrate is a glass substrate with a thickness of 5 mm; the shape of the vacuum channel is a square column shape with a side length of 10 μm.

[0056] The preparation method of vacuum channel transistor based on photocathode is as follows:

[0057] Use acetone, absolute ethanol, acidic solution and deionized water to clean the silicon wafer surface organic matter and oxides and other pollutants;

[0058] Put the silicon wafer into the oxidation furnace, and oxidize the surface of the silicon wafer to form the first SiO 2 Insulation;

[0059] SiO obtained...

example 2

[0066] The vacuum channel transistor based on GaN photocathode and its preparation method are as follows:

[0067] The anode material is selected as Al material with a thickness of 1mm; both insulating layers are Al 2 o 3 Material, the thickness is 100nm; the gate is Mo metal material, the thickness is 100nm; the photocathode is GaN photocathode, the thickness of the cathode material is 80nm, the thickness of the glass support substrate is 0.46mm; the shape of the vacuum channel is circular, the diameter is 100nm .

[0068] The preparation method of vacuum channel transistor based on photocathode is as follows:

[0069] The first step is to use acetone, absolute ethanol, acidic solution and deionized water to clean the surface organic matter and oxides of the Al material;

[0070] The second step is to prepare the first Al on the surface of the Al material using ion sputtering deposition technology 2 o 3 Insulation;

[0071] In the third step, a Mo gate layer is prepared...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a vacuum channel transistor and a preparation method thereof. The transistor includes an anode, a first insulating layer, a gate, a second insulating layer, and a photocathodewhich are distributed sequentially; and a vacuum channel is formed between the anode and the photocathode. The transistor provided by the present invention is provided with the vacuum channel, and therefore, an electron transport distance is extremely short, and the transistor has higher carrier mobility and carrier mean free path. In a solid device, electron energy scattering influences the thermal stability of the device, while, in the vacuum channel transistor of the invention, the electrons will not exert such kind of influence in the vacuum channel.

Description

technical field [0001] The invention relates to the field of electric vacuum components. More specifically, it relates to a vacuum channel transistor and a manufacturing method thereof. Background technique [0002] As the basis of modern electronic information technology, the integrated circuit chip is composed of silicon-based CMOS field effect transistors. The integrated circuit chip composed of CMOS has the characteristics of strong function, low power consumption, fast speed and low cost. In the first few decades, integrated circuits basically followed Moore's Law, that is, the number of components that can be accommodated on an integrated circuit doubles every 18 to 24 months, and its performance is also doubled. However, after entering the 21st century, due to processing technology Relative to hysteresis and device physical limitations, the development of silicon-based CMOS transistors is about to reach its physical limits. In 2015, Intel Corporation announced that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J40/16H01J21/10H01J9/00
Inventor 郝广辉邵文生张珂
Owner NO 12 RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com