Silicon carbide-based composite circuit board and preparation method thereof

Abstract

The invention discloses a silicon carbide-based composite circuit board and a preparation method thereof and belongs to the technical field of circuit boards. The silicon carbide-based composite circuit board comprises a silicon carbide-based composite base board and a circuit printed on the silicon carbide-based composite base board, wherein the silicon carbide-based composite circuit board is prepared from raw materials of, by weight part, 50-60 parts of silicon carbide, 20-28 parts of glass powder, 5-10 parts of filler, 3-7 parts of adhesives and 7-12 parts of additives. The silicon carbide-based composite circuit board is prepared by taking the silicon carbide and the glass powder as the main component and matching with the filler, the adhesives and the additives through ball milling,ultrasonic treatment, spray granulation and three sintering processes. Through dispersion and adhesion of the raw materials, the prepared silicon carbide-based composite base board can be low in thermal expansion coefficient, high in mechanical strength, good in stability and capable of effectively improving the qualification rate, thereby being high in promotional significance.

Description

technical field

[0001] The invention relates to the technical field of circuit boards, in particular to a silicon carbide-based composite circuit board and a preparation method thereof. Background technique

[0002] Compared with traditional silicon (Si) materials, silicon carbide (SiC) is widely used in high-power switching circuits and power system applications due to its wider band gap, higher thermal conductivity and higher critical breakdown field strength. has received widespread attention. The most prominent performance advantage of SiC power devices lies in their high-voltage, high-frequency and high-temperature operating characteristics, which can effectively reduce the power loss of power electronic systems. Although the application prospect of silicon carbide-based substrates is broad, in the actual production process, there are problems such as low sintering density and low utilization rate of raw materials, which restrict the large-scale use of this kind of mat...