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Graphene and preparation method thereof

A graphene and copper foil technology, applied in the field of graphene and its preparation, can solve problems such as unfavorable industrial production, high energy consumption, long time, etc., and achieve the effects of facilitating large-scale mass production, low energy consumption, and low price

Pending Publication Date: 2019-06-07
SOUTH CHINA UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although long-term high-temperature annealing can improve the quality of graphene, this method takes a long time and consumes a lot of energy, which is not conducive to the realization of industrial production

Method used

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  • Graphene and preparation method thereof
  • Graphene and preparation method thereof
  • Graphene and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 did not carry out acid etching activation

[0029] A kind of copper foil that does not carry out acid etching activation prepares graphene, and preparation steps are as follows:

[0030] (1) Put the copper foil into ethanol and deionized water and ultrasonically clean it for 10 minutes, put it on a quartz boat, and send it into a tube furnace;

[0031] (2) Vacuumize the tube furnace. When the vacuum degree reaches 0.1-2pa, argon gas is introduced to make the pressure in the furnace reach normal pressure, and the tube furnace is raised from room temperature to 1000°C-1030°C. Always pass argon and hydrogen into the tank, the argon and hydrogen are 300-500sccm and 40-50sccm respectively;

[0032] (3) keep this furnace temperature, pass into methane gas to prepare graphene, methane flow rate is 2-4sccm, graphene growth time is 15min;

[0033] (4) Finally stop the feed of methane and hydrogen, keep the feed of argon, lower the furnace temperature to room tempe...

Embodiment 2

[0036] Embodiment 2 carries out acid etching activation with volume concentration 3‰ phosphoric acid

[0037] A kind of embodiment of Graphene described in the present invention, Graphene described in the present embodiment is prepared by the following method:

[0038] (1) Use phosphoric acid with a volume concentration of 3‰ to perform acid etching on the surface of copper foil for about 10-20 minutes;

[0039] (2) Then put it in a sodium hydroxide solution with a mass concentration of 1‰-10‰ for alkaline neutralization, and the neutralization time is about 5-10min;

[0040] (3) Wash the copper foil repeatedly with deionized water and dry it to obtain a clean copper foil surface;

[0041] (4) Put the copper foil on the quartz boat and send it into the tube furnace, and then vacuumize the tube furnace. The furnace is raised from room temperature to 1000°C-1030°C, and argon and hydrogen are always introduced during the heating process, and the argon and hydrogen are 300-500sc...

Embodiment 3

[0046] Embodiment 3 carries out acid etching activation with volume concentration 6‰ phosphoric acid

[0047] A kind of embodiment of Graphene described in the present invention, Graphene described in the present embodiment is prepared by the following method:

[0048] (1) Use phosphoric acid with a volume concentration of 6‰ to perform acid etching on the surface of copper foil for about 10-15 minutes;

[0049] (2) Then put it in a sodium hydroxide solution with a mass concentration of 1‰-10‰ for alkaline neutralization, and the neutralization time is about 5-10min;

[0050] (3) Wash the copper foil repeatedly with deionized water and dry it to obtain a clean copper foil surface;

[0051] (4) Put the copper foil on the quartz boat and send it into the tube furnace, and then vacuumize the tube furnace. The furnace is raised from room temperature to 1000°C-1030°C, and argon and hydrogen are always introduced during the heating process, and the argon and hydrogen are 300-500sccm...

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Abstract

The invention discloses a preparation method of graphene. The method is s follows: graphene is prepared on the surface of a copper foil activated by the acid etching, wherein the acid is at least oneof phosphoric acid, hydrochloric acid and nitric acid. The invention provides an atmospheric pressure chemical vapor deposition method which is capable of preparing the high quality graphene. The graphene prepared by the method has negligible defect peaks which indicate that the graphene has few defects; and has high transmittance which indicates that the prepared graphene has relatively few layers and is a single or double layer graphene. According to the preparation method of graphene, the preparation process and equipment are simple, the price is low, and the energy consumption is relatively low, so that the method is easy to achieve large-scale production.

Description

technical field [0001] The invention relates to the technical field of nano functional materials, in particular to graphene and a preparation method thereof. Background technique [0002] Carbon is one of the most closely related to human beings and one of the most important elements existing in nature. It has a variety of electronic orbital characteristics: sp, sp 2 ,sp 3 hybridization. more due to sp 2 The anisotropy of the crystal and the anisotropy of its arrangement caused by the anisotropy of the crystal make the carbon material with carbon as the only constituent element have various properties. Graphene has been a hot topic of research since 2004, when a team at the University of Manchester in the UK produced stable graphene for the first time. As an ideal two-dimensional atomic crystal, graphene has ultra-high electrical and thermal conductivity, huge theoretical specific surface area, extremely high Young's modulus and tensile strength. [0003] At present, gr...

Claims

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Application Information

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IPC IPC(8): C01B32/186
Inventor 韦宇冲彭继华苏东艺
Owner SOUTH CHINA UNIV OF TECH