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A Refractive Index Sensor Based on Magneto-Optical Surface Plasmon Resonance

A surface plasmon and refractive index sensor technology, applied in the field of optical sensing, can solve the problems of insufficient figure of merit of MO-LSPR devices, and achieve the effects of high stability, improved quality factor, and high magneto-optical effect

Active Publication Date: 2022-05-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Description
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Problems solved by technology

[0005] In order to solve the problem of insufficient figure of merit of existing MO-LSPR devices, the present invention provides a refractive index sensor based on magneto-optical surface plasmon resonance

Method used

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  • A Refractive Index Sensor Based on Magneto-Optical Surface Plasmon Resonance
  • A Refractive Index Sensor Based on Magneto-Optical Surface Plasmon Resonance
  • A Refractive Index Sensor Based on Magneto-Optical Surface Plasmon Resonance

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Embodiment Construction

[0016] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] This embodiment adopts a metal-insulator-metal (MIM) sandwich structure, adopts magnetic oxide Ce:YIG as the magnetic layer material in the magneto-optical surface plasmon resonance sensor, and the whole device includes a titanium nitride film and a magneto-optic insulating layer from bottom to top. , Au nanodisk. The thickness of the titanium nitride film is 120nm, the thickness of the magneto-optical insulating layer is 90nm; the thickness of the gold nano-disk is 25nm, the radius is 72nm, and the square periodic structure is 600nm.

[0018] Its preparation method is as follows:

[0019] The quartz substrate is selected as the substrate, and the film is deposited by pulsed laser deposition, magnetron sputtering and thermal evaporation.

[0020] Step 1. On the double-thrown quartz substrate, 120nm titanium nitride TiN is dep...

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Abstract

The invention belongs to the field of optical sensing, in particular to a refractive index sensor based on magneto-optic surface plasmon resonance. The present invention carries out structural design by designing the dielectric layer, and builds a three-layer structure of a continuous metal thin film layer, a Ce:YIG thin film and a noble metal periodic structure, thereby realizing localized surface plasmons of noble metal nanoparticles and a continuous metal thin film layer / Ce: The propagating surface plasmon resonance coupling at the YIG interface uses the Ce:YIG thin film material, which has lower optical loss in the visible and near-infrared bands than ferromagnetic metal materials, and has a higher magneto-optical effect and High stability; the scattering loss of localized plasmon resonance is significantly reduced, and the magneto-optical effect is significantly enhanced. Using the strong magneto-optical effect of magneto-optic oxide, the device quality factor reaches 2200RIU ‑1 .

Description

technical field [0001] The invention belongs to the field of optical sensing, in particular to a refractive index sensor based on magneto-optic surface plasmon resonance. Background technique [0002] Surface Plasmon Resonance (SPR) refers to the collective oscillation generated by the coupling of conduction electrons in metals and incident electromagnetic fields. Among the SPR phenomena, localized plasmon resonance (LSPR) refers to the local resonance phenomenon of free electrons generated by the coupling of electromagnetic waves with subwavelength metal particles. Since LSPR is highly sensitive to the composition, shape, size, and local dielectric environment of nanoparticles, it can be applied as a label-free and highly sensitive sensor for measuring environmental changes and biomolecular interactions. At the same time, due to the small size of the LSPR structure, chemical-biological sensing with high spatial resolution can be realized. However, due to the wide resonant...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/41G01N21/552
Inventor 毕磊王会丽
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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