Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nanodiamond array and preparation method thereof

A nano-diamond and array technology, applied in the field of diamond, can solve the problems of nano-diamond array conical direction and density, many factors affecting the nano-diamond array, non-uniform nano-diamond array size, and complicated operation steps, so as to achieve easy control of growth conditions and improve operability Sexual, highly consistent effect

Inactive Publication Date: 2019-07-02
SHENZHEN INST OF ADVANCED TECH
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The operation steps of this method are relatively complicated, and there are many influencing factors on the cone direction and density of the obtained nano-diamond array, which is difficult to control, and the obtained nano-diamond array has a non-uniform size.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanodiamond array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0047] The preparation method of the nano-diamond array provided by the invention adopts the anodized aluminum template as a substrate, and grows the nano-diamond array on it by a deposition method. Compared with the traditional graphite conversion method, the preparation method avoids harsh conversion conditions and improves operability. Compared with the traditional silicon-based manufacturing process, this preparation method avoids the etching process of nano-diamonds. Therefore, the preparation method provided by the present invention has simple process steps and easy control of growth conditions, so the obtained High-density, high-purity and regular ordered nano-diamond array with a density of 3×10 11 cm -1 ~9×10 11 cm -1 , the structure size of the array in the nano-diamond array is between 5nm and 150nm, and the size of the array structure is not more than 10nm, maintaining a high degree of consistency.

[0048] In one embodiment of the present invention, the prepar...

Embodiment 1

[0071] This embodiment is a method for preparing a nano-diamond array, comprising the following steps:

[0072] Step a) Pretreatment: ultrasonically clean a high-purity aluminum sheet with a purity of 99.99% and a thickness of 0.15 mm in acetone for 5 minutes to remove surface oil, and then place it in a horse-boiler furnace for annealing at a temperature of 300-400°C , the annealing time is 2-3 hours; after that, the annealed and cooled aluminum sheet is electrolytically polished, the aluminum sheet is used as the anode, the platinum is used as the cathode, and the polishing solution is a mixture of perchloric acid and ethanol with a volume ratio of 1:4. For: voltage 15-20V, temperature 0-6 ℃, polishing time 3-5min;

[0073] Step b) the first anodic oxidation: the pretreated aluminum sheet is used as the anode, the platinum sheet is used as the cathode, and the oxalic acid solution of 0.4mol / L is used as the electrolyte for the first anodic oxidation, and the oxidation is per...

Embodiment 2

[0082] This embodiment is a preparation method of a nano-diamond array. Compared with the preparation method provided in Example 1, the voltage in the first anodic oxidation process in this embodiment is 50V, and the voltage in the second anodic oxidation process is 50V. Also be 50V, all the other technological parameters are identical with embodiment 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a nanodiamond array and a preparation method thereof, and relates to the field of diamond. According to the preparation method of the nanodiamond array, the nanodiamond array isgrown and prepared by a deposition method with an anodized aluminium template as a substrate. By using the preparation method, the technical problems that in the prior art, a nanodiamond array preparation method is cumbersome and sizes are uneven and cannot be effectively controlled can be alleviated, and high-density nanodiamond arrays with large area highly ordered arrangement, uniform nano sizes and controllable sizes can be prepared by the method.

Description

technical field [0001] The invention relates to the field of diamonds, in particular to a nano-diamond array and a preparation method thereof. Background technique [0002] The excellent physical and chemical properties of diamond films make them have excellent application prospects in many high-tech fields such as wear-resistant coatings, biomedicine, thin-film microsensors, and nano-electromechanical systems. The successful preparation of nanodiamond arrays laid the foundation for the use of nanodiamonds in the field of biomedicine. Nanodiamond arrays can be widely used in biomedicine such as gene therapy, cell therapy, and cytology. It can make drug delivery in cells and between nuclei more efficient, and has a high curative effect on a variety of cells and other diseases. . However, this requires that the density of the nano-diamond array be large enough, and the size of the nano-needles can be controlled, so how to prepare a nano-diamond array that meets the requireme...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/12C23C16/27C23C16/02C23C16/01
CPCC23C16/01C23C16/02C23C16/271C23C16/274C25D11/045C25D11/12
Inventor 唐永炳李星星黄磊王陶杨扬
Owner SHENZHEN INST OF ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com