Semiconductor photoelectric detector based on three-layer structure and preparation method of semiconductor photoelectric detector
A photodetector, three-layer structure technology, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of small photocurrent and low responsivity, and achieve improved device performance, high sensitivity, and improved photocurrent and responsivity. Effect
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Embodiment 1
[0038] A semiconductor photodetector based on a three-layer structure, including a substrate 1 at the bottom and a three-layer material structure above the substrate 1. The three-layer material structure from bottom to top is: intrinsic semiconductor 2, doping or alloying Semiconductor 3, spacer layer 4, the top of the spacer layer 4 is connected to the electrode layer 5, wherein the electrode layer 5 includes the first electrode 6, the second electrode 7, made based on intrinsic semiconductor-doped or alloyed semiconductor-spacer A metal-semiconductor-metal photodetector with a three-layer structure.
[0039] Specifically, the material of the spacer layer 4 may be a semiconductor or an insulating medium.
[0040] Specifically, both the intrinsic semiconductor 2 and the doped or alloyed semiconductor 3 are oxides
[0041] Specifically, the elements introduced into the doped or alloyed semiconductor 3 include one of Si, Ti, Sn, In, Zn, Mn, Ga, Cu, Ge, Ta and Nb.
[0042] Spec...
Embodiment 2
[0050] The preparation method based on the semiconductor photodetector of three-layer structure in embodiment 1 may further comprise the steps:
[0051] Step 1, surface treatment of the substrate;
[0052] Step 2. Preparation of intrinsic semiconductor: Epitaxial growth of intrinsic semiconductor on the cleaned substrate in step 1;
[0053] Step 3. Preparation of doped or alloyed semiconductor: Epitaxial growth of doped or alloyed semiconductor on the intrinsic semiconductor in step 2;
[0054] Step 4, preparation of spacer layer: growing intrinsic semiconductor or insulating medium on the doped or alloyed semiconductor in step 3;
[0055] Step 5, photolithography;
[0056] Step 6, deposition of metal electrodes;
[0057] Step 7, annealing.
Embodiment 3
[0059] The preparation method based on the semiconductor photodetector of three-layer structure in embodiment 1 may further comprise the steps:
[0060] Step 1. Surface treatment of the substrate: ultrasonically clean a sapphire substrate with a size of 5 mm×10 mm and a thickness of 0.5 mm in acetone, absolute ethanol and deionized water for 1 min, then blow dry with nitrogen, and use a hot plate to Bake at 80°C for 5 minutes to remove the adsorbed matter on the surface of the substrate and ensure that the surface of the sapphire substrate is clean and dry;
[0061] Step 2. Buffer layer β-Ga 2 o 3 Film preparation: β-Ga with a thickness of about 20nm was epitaxially grown on the sapphire substrate cleaned in step 1 by molecular beam epitaxy 2 o 3 film, the growth conditions are: the vacuum degree of the back and the bottom is 1.5×10 -5 Torr, the substrate temperature is 760°C, the Ga source temperature is 920°C, the input power of the RF power supply is 300W, the reflected...
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