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A kind of half metal/semiconductor Schottky junction and its preparation method and Schottky diode

A technology of Schottky diodes and semiconductors, applied in semiconductor/solid-state device manufacturing, diodes, semiconductor devices, etc., can solve the problems of reduced interface quality, poor thermal stability, and easy to form defects, etc.

Active Publication Date: 2022-03-18
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the difference in the properties of traditional metal and semiconductor materials, the thermal stability of the metal and semiconductor interface is poor, and it is easy to form defects, interface diffusion and interface reaction, thereby reducing the interface quality.

Method used

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  • A kind of half metal/semiconductor Schottky junction and its preparation method and Schottky diode
  • A kind of half metal/semiconductor Schottky junction and its preparation method and Schottky diode
  • A kind of half metal/semiconductor Schottky junction and its preparation method and Schottky diode

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preparation example Construction

[0043] In the present invention, the preparation method of the Schottky diode preferably comprises the following steps:

[0044] A material containing a heavily doped buffer layer, a semiconductor layer, a semi-metal layer and a protective layer is prepared on a substrate by molecular beam epitaxy, wherein the semi-metal / semiconductor Schottky junction formed by the semiconductor layer and the semi-metal layer For the half-metal / semiconductor Schottky junction of the above technical solution, an ohmic contact is formed between the protective layer and the half-metal layer; the position of the electrode is determined by photolithography, and the etching depth reaches the heavily doped buffer layer of the obtained material ; The top electrode is prepared on the protective layer by evaporation method; the bottom electrode is prepared on the etched heavily doped buffer layer to form a mesa structure, and an ohmic contact is formed between the bottom electrode and the heavily doped ...

Embodiment 1

[0052] (1) Deoxidize the GaAs substrate on the (001) crystal plane for 15 minutes. During the deoxidization process, the surface temperature of the GaAs substrate is 600°C;

[0053] (2) Using the molecular beam epitaxy method, the background vacuum is 1×10 -7 ~1×10 -8 Epitaxial growth of a GaAs semiconductor layer (non-doped semiconductor layer, that is, no dopant source) on a GaAs substrate under torr and 580°C, with a thickness of 100 nm and a growth rate of 1 μm / h;

[0054] (3) Reduce the temperature of the obtained material to 455°C at a cooling rate of 30°C / min, and the background vacuum is 1×10 -7 ~1×10 -8 Under torr conditions, an ErAs semi-metal layer is epitaxially grown on the GaAs semiconductor layer by molecular beam epitaxy, with a thickness of 125 nm and a growth rate of 170 nm / h;

[0055] (4) Reduce the temperature of the obtained material to 50°C at a cooling rate of 30°C / min, and the background vacuum is 5×10 -10 When the Torr is lower than that, a metal A...

Embodiment 2

[0059] (1) After deoxidizing the GaAs substrate on the (001) crystal plane (the surface temperature of the GaAs substrate is 600°C, and the processing time is 15 minutes), molecular beam epitaxy is used in a background vacuum of 1×10 -7 ~1×10 -8 Under the conditions of torr and 580°C, taking the GaAs substrate as the reference, the GaAs heavily doped buffer layer (thickness: 100nm) and GaAs concentration gradient layer (thickness: 300nm) were epitaxially grown sequentially, the growth rate was 1μm / h, and the dopant source was Si, the content of the dopant source in the GaAs heavily doped buffer layer is 1×10 18 cm -3 , the content of the dopant source in the GaAs concentration gradient layer is 5×10 17 cm -3 ;

[0060] (2) Using the molecular beam epitaxy method, the background vacuum is 1×10 -7 ~1×10 -8 Under the condition of torr and 580°C, epitaxially grow a GaAs semiconductor layer on the GaAs concentration gradient layer (it is a doped semiconductor layer, the dopin...

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Abstract

The invention relates to the technical field of electronic materials, in particular to a half-metal / semiconductor Schottky junction, a preparation method thereof, and a Schottky diode. The half-metal / semiconductor Schottky junction provided by the present invention includes a semiconductor layer and a half-metal layer, and a Schottky contact is formed between the semiconductor layer and the half-metal layer; wherein, the compound forming the half-metal layer is a rare earth element Compounds with Group VA elements. The semi-metal / semiconductor Schottky junction provided by the present invention has good interface thermal stability between the semiconductor layer and the semi-metal layer, based on the Schottky diode of the semi-metal / semiconductor Schottky junction, the ideality factor is about 1.05, and the noise Equivalent power down to pW / Hz 1 / 2 even sub pW / Hz 1 / 2 order of magnitude, with more sensitive detection performance.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a half-metal / semiconductor Schottky junction, a preparation method thereof, and a Schottky diode. Background technique [0002] Schottky diodes are widely used in high-speed integrated circuits and microwave technology, and their nonlinear characteristics can be used in high-frequency detection and harmonic generation. Ideally, the current-voltage characteristics of a Schottky diode conforming to the thermionic emission theory are [0003] [0004] [0005] Among them, I s is the reverse saturation current, q is the amount of charge (-e for electrons, e for holes), V is the applied bias voltage on the Schottky junction, k is the Boltzmann constant, T is the temperature, and A is junction area, A * is the effective Richardson constant, Φ B is the Schottky barrier. [0006] In practical cases, considering other current formation mechanisms, such as recombina...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/47H01L21/285H01L29/872
CPCH01L29/475H01L21/28581H01L29/872H01L29/0657H01L29/20H01L29/66212
Inventor 芦红丁元丰张克冬
Owner NANJING UNIV
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