Composite filtered arc ion plating of combination magnetic field, lined tapered tube and porous baffle
A technology of arc ion plating and porous baffles, applied in the field of arc ion plating, can solve the problems of uniform ablation of target materials, large particle defects, pollution, etc., and achieve effective control, improve utilization efficiency, and ensure uniformity
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specific Embodiment approach 1
[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment. The arc ion plating device used in the present embodiment combines the magnetic field with the lining tapered tube and the porous baffle compound filter, including the bias power supply (1), the arc power supply (2), and the arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), liner bias conical tube and porous baffle combined device (6), liner bias power supply (7), movable coil device ( 8), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);
[0021] In this device:
[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the combination device of the lined bias conical tube and the porous baffle ...
specific Embodiment approach 2
[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating of the inner tapered tube and the porous baffle composite filter, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), the liner bias conical tube and porous baffle combined device (6) maintain the DC positive bias, turn on the bias power supply (1 ), turn on the power supply of the movable coil device (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare multilayers with different stress states, microstructures and element ratios The structural film is the same as the second embodiment.
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