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Composite filtered arc ion plating of combination magnetic field, lined tapered tube and porous baffle

A technology of arc ion plating and porous baffles, applied in the field of arc ion plating, can solve the problems of uniform ablation of target materials, large particle defects, pollution, etc., and achieve effective control, improve utilization efficiency, and ensure uniformity

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-stage magnetic field filtering method and the combination of the shape of the lined bias conical tube and the porous baffle to eliminate the arc plasma Large particle defects contained in the body, while ensuring that the arc plasma passes through the combination device of the lined bias conical tube and the porous baffle and the multi-stage magnetic field filter device with high transmission efficiency, and then uses the movable coil device to control the multi-stage magnetic field The transmission direction of the arc plasma transmitted by the device and the combination of the lined bias conical tube and the porous baffle in the vacuum chamber can realize the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcome the The problem of non-uniform film deposition caused by the limitation of the deposition position caused by the vacuum chamber space and the layout design of the target source or the limitation of the substrate shape, completely eliminates the transmission from the multi-level magnetic field device and the combination device of the lined bias conical tube and the porous baffle. There may be large particle defects remaining in the arc plasma, so that the ion energy can be adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and a continuous, dense and high-quality film can be prepared. In order to reduce the production cost of the target, improve the transmission efficiency of the arc plasma, increase the deposition rate of the film, and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a combination of magnetic field and inner cone is proposed. Arc Ion Plating Based on Composite Filtration of Shaped Tube and Porous Baffle

Method used

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  • Composite filtered arc ion plating of combination magnetic field, lined tapered tube and porous baffle
  • Composite filtered arc ion plating of combination magnetic field, lined tapered tube and porous baffle
  • Composite filtered arc ion plating of combination magnetic field, lined tapered tube and porous baffle

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment. The arc ion plating device used in the present embodiment combines the magnetic field with the lining tapered tube and the porous baffle compound filter, including the bias power supply (1), the arc power supply (2), and the arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), liner bias conical tube and porous baffle combined device (6), liner bias power supply (7), movable coil device ( 8), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the combination device of the lined bias conical tube and the porous baffle ...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating of the inner tapered tube and the porous baffle composite filter, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), the liner bias conical tube and porous baffle combined device (6) maintain the DC positive bias, turn on the bias power supply (1 ), turn on the power supply of the movable coil device (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare multilayers with different stress states, microstructures and element ratios The structural film is the same as the second embodiment.

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Abstract

The invention discloses a composite filtered arc ion plating of a combination magnetic field, a lined tapered tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films by large particles in a multistage magnetic field filter device, and the loss of arc plasma in the transmission process are solved. A device comprises a bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, a lined bias voltage tapered tube and porous baffle combination deviceand bias voltage power supply, a movable coil device and power supply, a high power pulse magnetron sputtering target source and relevant power supply, a bias voltage power supply waveform oscilloscope, a vacuum chamber, and the like; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4>Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of the arc plasma, the lined bias voltage taper tube and porous baffle combination device and the multistage magnetic field device eliminate large particle defects in the arc plasma and improve the transmission efficiency of the arc plasma in the filter device, the loss in the vacuum chamber is reduced, and technological parameters are set to prepare the thin films.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field, a lining tapered pipe and a porous baffle for composite filtration, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large parti...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/564C23C14/352C23C14/3485
Inventor 魏永强王好平侯军兴张华阳刘源蒋志强
Owner 魏永强
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