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Low-dimensional material forming method

A technology of low-dimensional materials and two-dimensional materials, applied in the field of two-dimensional semiconductor materials, can solve problems such as difficulty in obtaining large-area two-dimensional materials and high requirements for substrates, and achieve the effect of satisfying basic needs and simple methods.

Inactive Publication Date: 2019-07-12
GUIYANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the formation of two-dimensional materials with a single-layer or few-layer structure has high requirements on the substrate, and it is difficult to obtain large-area, few-layer uniform, and high-purity two-dimensional materials with a single-layer or few-layer structure through existing conventional processes.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for forming a low-dimensional material, the steps are as follows:

[0029] S1: Undoped N-type silicon wafer with a thickness of 500 microns is removed by chemical mechanical planarization to remove the 200nm top layer of silicon on the top of the silicon wafer, and then the mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 is used to remove the surface particles of the silicon wafer , so that one surface of the silicon wafer becomes flat, and the uniformity in the wafer is less than 2nm, and the processed silicon wafer is obtained;

[0030] S2: Take a processed silicon wafer, oxidize it through a high-temperature furnace tube at 1050°C, and then form an oxide layer with a thickness of 200nm on the flat surface of the silicon wafer by chemical mechanical polishing;

[0031] S3: by chemical deposition, a thin layer of graphene with a thickness of 10 nm is grown on the top of the oxide layer;

[0032] S4: Take another p...

Embodiment 2

[0038] A method for forming a low-dimensional material, the steps are as follows:

[0039] S1: Remove the 200nm top layer of silicon on the top of the 8-10Ω·cmN silicon wafer with a thickness of 100 microns by chemical mechanical planarization, and then use a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 to remove the surface of the silicon wafer Particles make one surface of the silicon wafer flat, and the uniformity within the wafer is less than 2nm, and the processed silicon wafer is obtained;

[0040] S2: Take a treated silicon wafer and generate 1000nm silicon dioxide (SiH 4 45 sccm, N 2 790sccm, after a pressure of 600mT), then form an oxide layer with a thickness of 10nm on the flat surface of the silicon wafer by chemical mechanical polishing;

[0041] S3: transfer a layer of molybdenum disulfide with a thickness of 1 nm on the top of the oxide layer by mechanical stripping;

[0042] S4: Take another processed silico...

Embodiment 3

[0048] A method for forming a low-dimensional material, the steps are as follows:

[0049] S1: Undoped or low-doped N-type or P-type silicon wafers with a thickness of 750 microns are removed by chemical mechanical planarization to remove the 200nm top layer of silicon on the top of the silicon wafers, and then mixed with concentrated sulfuric acid and hydrogen peroxide at a volume ratio of 3:1 Solution, remove the surface particles of the silicon wafer, so that one surface of the silicon wafer becomes flat, and the uniformity in the wafer is <2nm, and the processed silicon wafer is obtained;

[0050] S2: Take a processed silicon wafer, oxidize it through a high-temperature furnace or chemical vapor deposition, and then form an oxide layer with a thickness of 500 nm on the flat surface of the silicon wafer through chemical mechanical polishing;

[0051] S3: growing or transferring a thin layer of graphene with a thickness of 20 nm on top of the oxide layer by chemical depositi...

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Abstract

The invention relates to a low-dimensional material forming method, and belongs to the technical field of two-dimensional semiconductor materials. The forming method comprises the following steps of:performing surface treatment on silicon wafers through chemical mechanical planarization and self-limiting oxidation to ensure that one surfaces of the silicon wafers are leveled and the uniformity inthe silicon wafers is smaller than 2nm to obtain the treated silicon wafers; taking one treated silicon wafer, and forming an oxide layer on the other non-flat surface of the silicon wafer; growing or transferring a layer of two-dimensional materials on the top of the oxide layer; taking the other treated silicon wafer, and bonding the flat surface of the other treated silicon wafer with the two-dimensional material layer of the silicon wafer in the step S3 through Van der Waals force; treating the non-flat surface of the obtained silicon wafer through chemical mechanical planarization and self-limiting oxidation to obtain a flat surface; performing etching of an atomic layer and self-limiting oxidation to obtain few layers of flat silylene; and under the catalysis of nitrogen or argon, rearranging crystal lattices of the silylene according to crystal lattices of the lower surface of Si to form the two-dimensional material with a single-layer structure or a few-layer structure and having a large area, uniform few layers and high purity.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional semiconductor materials, and in particular relates to a method for forming low-dimensional materials. Background technique [0002] Two-dimensional semiconductor materials with a single-layer or few-layer structure (such as graphene, black phosphorus, graphyne, indium antimonide, indium phosphide, molybdenum sulfide, zinc sulfide, and silicene, etc.) have electronic, thermal, mechanical, and chemical properties. It has a wide range of application prospects in the fields of electronic information, catalysis, energy storage, biomedicine, composite new materials and use under extreme conditions. Especially in the field of electronics, it is considered to be a key material in the post-Moore era. In addition to applications in electronic and optoelectronic devices, two-dimensional atomic crystal materials can also be applied to a variety of functional devices. Therefore, the demand for two-di...

Claims

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Application Information

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IPC IPC(8): H01L21/306
CPCH01L21/306H01L21/30625
Inventor 周章渝张青竹徐庆陈雨青孙健王代强肖寒王松
Owner GUIYANG UNIV
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