Preparation method of two-dimensional MoS2 nanosheet

A technology of nanosheets and large sheets, which is applied in the field of preparation of two-dimensional MoS2 nanosheets, can solve problems such as limited applications, and achieve the effects of ensuring electrical conductivity, controllable size of nanosheets, and high stability

Inactive Publication Date: 2019-07-19
南京倍格电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Since the discovery of graphene materials in 2004, due to its novel optical properties and unique electrical characteristics, it has attracted widespread attention and research from scientists all over the world. However, graphene is a zero-band gap metallic material, which limits its use in electronic Applications in the field of devices

Method used

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  • Preparation method of two-dimensional MoS2 nanosheet
  • Preparation method of two-dimensional MoS2 nanosheet
  • Preparation method of two-dimensional MoS2 nanosheet

Examples

Experimental program
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Effect test

Embodiment 1

[0037] A two-dimensional MoS 2 A method for preparing nanosheets, comprising:

[0038] Step S1, first in an inert gas glove box, put 1 g MoS 2 polycrystalline powder (polycrystalline MoS 2 The particle size of the powder is 10-30 μm, the purity is greater than 99.95%), add 2.5 mol / L 40 ml n-butyllithium solution, seal and mix evenly in the reaction kettle;

[0039] Step S2, the above-mentioned reaction kettle for forming the mixed sample is reacted in a high-temperature incubator at 70°C for 12 h, and naturally cooled to room temperature after the reaction;

[0040]Step S3, after the reaction, clean the n-butyllithium solution remaining in the sample with clean n-hexane in an inert gas glove box to obtain a black lithium intercalation compound li X MoS 2 ;li X MoS 2 is a mixture, wherein the value of X is 1 to 3;

[0041] Step S4, after cleaning the lithium intercalation compound and vacuum drying to obtain li X MoS 2 The intercalation compound was added to deionized ...

Embodiment 2

[0055] The difference between this example and Example 1 lies in step S4: after the obtained large-diameter single-layer MoS 2 After nanosheets, continue to prepare small-diameter single-layer MoS by ultrasonic pulverization 2 Nanosheets; at the same time, by increasing the ultrasonic power to 250W and 50Hz to continue peeling, the control time is 2h to increase the peeling rate of nanosheets and obtain MoS with smaller sheet diameters 2 Nanosheets.

[0056] The specific process of centrifugation is as follows:

[0057] Step 1: Introduce the overflow tube into the centrifuge tube of the centrifugal separation device.

[0058] Step 2: Turn on the stirring device to provide centrifugal force, and the centrifuge tube is rotated and centrifuged at a speed of 4000-4500 r / min.

[0059] Step 3: Centrifuge for 30 minutes, and separate the heavy phase solid residue through the slag discharge pipe in the centrifuge tube. The solid substance separated in this step is a small single-la...

Embodiment 3

[0063] A two-dimensional SnS 2 A method for preparing nanosheets, comprising:

[0064] Step S1, first in an inert gas glove box, put 1 g SnS 2 Add polycrystalline powder (particle size 10-30 μm, purity greater than 99.95%) into 2.5mol / L 40 ml n-butyllithium solution, seal and mix evenly in the reactor;

[0065] Step S2, the above-mentioned reactor for forming the mixed sample was reacted in a high-temperature incubator at 90° C. for 12 h, and naturally cooled to room temperature after the reaction.

[0066] Step S3, after the reaction, clean the residual n-butyl lithium in the sample with clean n-hexane in an inert gas glove box, and the orange-yellow SnS 2 into a black lithium intercalation compound li X SnS 2 . li X SnS 2 It is a mixture, wherein the value of X is 1-3.

[0067] Step S4, after cleaning the lithium intercalation compound and vacuum drying to obtain li X SnS 2 Intercalation compounds, added to deionized water, SnS 2 The violent reaction between the a...

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Abstract

The invention discloses a preparation method of a two-dimensional MoS2 nanosheet, and belongs to the field of nano materials. The preparation method of the two-dimensional MoS2 nanosheet comprises thefollowing steps: adding a certain amount of molybdenum disulfide polycrystal or ground MoS2 polycrystal powder into a certain volume of strong-activity alkali metal organic reagent under the condition of inert gas in a glove box, placing a sealed reaction kettle into a constant-temperature heating box at the temperature of 30-150 DEG C, and carrying heat treatment for 2-100 h; and completing reaction to obtain a black intercalation compound, after vacuum drying, adding the obtained intercalation compound powder into deionized water, meanwhile, carrying out ultrasonic-assisted stripping to prepare a single-layer MoS2 nanosheet in a stripping manner, and then carrying out ultrasonic crushing or grinding treatment on the polycrystalline MoS2 powder according to different sheet diameter requirements to obtain the nanosheet which is high in single-layer rate and controllable in size. The specific surface area of an electrode material is increased, and the excellent conductivity of the electrode material is guaranteed.

Description

technical field [0001] The invention belongs to the field of nanomaterials, especially a two-dimensional MoS 2 Preparation methods of nanosheets. Background technique [0002] Since the discovery of graphene materials in 2004, due to its novel optical properties and unique electrical characteristics, it has attracted widespread attention and research from scientists all over the world. However, graphene is a zero-band gap metallic material, which limits its use in electronic Applications in the field of devices. Therefore, it is urgent to find a two-dimensional material with a band gap structure. Inorganic transition metal sulfide (TMDS) material, as a representative of a new two-dimensional material, not only has a graphene-like planar structure and molecular layer thickness, but also has a direct semiconductor band. gap, and its novel photoelectric, catalytic, and thermoelectric properties have great application potential in the fields of optoelectronics, energy storage,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06C01G19/00C01G41/00B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G19/00C01G39/06C01G41/00C01P2004/20
Inventor 蒋连福董文英
Owner 南京倍格电子科技有限公司
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