Upper surface antireflective coating composition for photolithography

A technology of anti-reflection coating and composition, which is applied in the direction of anti-reflection coating, photosensitive material for optomechanical equipment, coating, etc., which can solve the problems of low transmittance, high refractive index, and large coating thickness, etc. Achieve the effects of reducing the refractive index, increasing the transmittance, and increasing the fluorine content

Inactive Publication Date: 2019-08-16
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
View PDF6 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is: in order to solve the problems of low transmittance, high refractive index and relatively large coating thickness of the antireflection coating composition currently used on the upper surface, the present invention provides a kind of antireflection coating composition for the upper surface combination

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Upper surface antireflective coating composition for photolithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] This embodiment provides a composition for semiconductor lithography anti-reflection coating, and a method for preparing the composition.

[0075] Composition preparation:

[0076] Step 1: Under room temperature, take 1.9g perfluoropolyether polymer F[CF(CF 3 )-CF 2 -O] n CF(CF 3 )-COOH (the average molecular weight is 1600), and part of the perfluoropolyether polymer F[CF(CF 3 )-CF 2 -O] n CF(CF 3 )-COOH is mixed with 10% polyvinylpyrrolidone solution to form a uniform transparent solution, wherein the molar ratio of polyvinylpyrrolidone to carboxylic acid generated by perfluoropolyether polymer is 15:1, and the molecular weight of polyvinylpyrrolidone is 5000.

[0077] Step 2: The remaining perfluoropolyether polymer F[CF(CF 3 )-CF 2 -O] n CF(CF 3 )-COOH is added to 0.18g 25% methyl ammonium hydroxide solution to form a uniform transparent solution, the carboxylic acid group generated by the perfluoropolyether polymer and the mol ratio of amine is 1:1.1, th...

Embodiment 2

[0081] Get 1.9g perfluoropolyether polymer F[CF(CF) in the present embodiment 3 )-CF 2 -O] n CF(CF 3 )-COOH (the average molecular weight is 500), under the situation that the total mass of the solution remains constant, the pH is adjusted to 2.2 by changing the consumption of fluorine-containing carboxylic acid and water, and the remaining operating steps of Example 1 are repeated.

Embodiment 3

[0083] Get 1.9g perfluoropolyether polymer F[CF(CF) in the present embodiment 3 )-CF 2 -O] n CF(CF 3 )-COOH (the average molecular weight is 4000), under the situation that the total mass of the solution remains constant, adjust the pH to 2.3 by changing the consumption of fluorine-containing carboxylic acid and water, and repeat the remaining operating steps of Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
degree of polymerizationaaaaaaaaaa
molecular weight distributionaaaaaaaaaa
Login to view more

Abstract

The invention discloses an upper surface antireflective coating composition for photolithography, and relates to the technical field of lithography processing in order to solve the problems of low transmittance and high refractive index of upper surface antireflective coating compositions used at present and large thickness of coating layers. The composition is mainly composed of a fluorine-containing substance, an acid, an amine and a solvent suitable for dissolving the above components, the pH value of the composition is less than or equal to 7, and the fluorine-containing substance is one or a mixture of the two of a perfluoropolyether polymer and a fluorine-containing compound. The fluorine-containing substance is mixed with a water-soluble resin solution to form a uniform solution, the amine compound is added to the fluorine-containing substance, a reaction is carried out to form an amine salt, the water-soluble resin solution containing the fluorine-containing substance and the amine salt solution are uniformly mixed, and an amino acid derivative and water are added to prepare a uniform transparent solution. The composition has the advantages of prevention of multiple reflection of light in a photoresist, reduction of the thickness of a photoresist coating layer in the photolithography, and improvement of the quality of a lithography pattern.

Description

technical field [0001] The invention relates to the technical field of photolithography processing, and more specifically relates to an upper surface antireflection coating composition used for photolithography. Background technique [0002] Photolithography is a method of transferring semiconductor circuit patterns on a photomask to a silicon wafer. By irradiating a photomask with a laser or an electron beam, the photosensitive substance on the wafer changes its material properties due to light sensitivity. The compound is called photoresist or photoresist. Photolithography is the most critical process unit in the manufacture of devices such as semiconductors and flat panel displays. In recent years, with the improvement of semiconductor integration, the improvement of photolithography technology and the application of many new technologies have realized the improvement of processing accuracy on the basis of continuous reduction of line width. [0003] However, during the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09D139/06C09D171/00C09D5/00G03F7/09
CPCC09D5/006C09D139/06G03F7/091C08L71/00
Inventor 李永斌
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap